S32HMD24926BAEA20
Abstract: V20810-F6096-D670 5185941F60 DS4282-4 S30ML02GP S71PL129NB0HFW4B0 gwj7 Spansion S99 S71VS064KB0ZJK1B0 S19MN02GP30TFP00
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA August 19, 2010 Advanced Change Notification No: Subject: 2806 Obsolescence of the products listed below Product Identification: 1201-2648.1 43470D3 43470G6 4347255 4347289
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43470D3
43470G6
5103535B84
5185941F60
5199213K04
AM29LV640GU53RPCI
DIG-00128-005
DS42824
PO71GL512NC0BAWEZ
PO71WS256NDOBAEE7
S32HMD24926BAEA20
V20810-F6096-D670
5185941F60
DS4282-4
S30ML02GP
S71PL129NB0HFW4B0
gwj7
Spansion S99
S71VS064KB0ZJK1B0
S19MN02GP30TFP00
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Untitled
Abstract: No abstract text available
Text: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25ns sTrr =s70ns TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED) PEAK1 CY SURGE
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OCR Scan
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s70ns)
1N5807
1N5809
1N5811
1N6626
1N6627
1N6628
1N6629
1N6630
1N6631
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EDI8M8257C
Abstract: DDD15L
Text: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static
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OCR Scan
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
The32
EDI8M8257LP)
I8M8257LP85P6C
EDI8M8257LP100P6C
DDD15L
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t1is
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC ^ED I 3QE D Elaekontfi Dislgns Inc. » • 3530114 0000714 b ■ EDI8M8257C/LP/P High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a
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OCR Scan
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QD00714
EDI8M8257C/LP/P
256Kx8
EDI8M8257C/LP/P
2048K
128Kx8
the128Kx8
T-46-23-14
ED18M8257C/LP/P
85-150ns
t1is
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QDQ0745
Abstract: No abstract text available
Text: ELECTRONIC m o D ESIG N S INC 3QE D • 3230114 Q00Q741 ■ EDI8M8512C/LP/P i Electronic D»t!gni Inc. High Speed Four Megabit S R A M Module 512Kx8 Static R A M C M O S, Module L O if llM m T Features T -H 6 -2 3 -W The EDI8M8512C/LP/P is a 4096K bit CMOS Static 512Kx8 bit CMOS Static
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OCR Scan
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EDI8M8512C/LP/P
512Kx8
EDI8M8512C/LP/P
4096K
128Kx8
28Kx8
0Q0a74a
85-160ns
T-46-23-14
QDQ0745
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Th62
Abstract: A17-A18j LA 4570 F LTDV
Text: EDI8M8512C/LP/P Electronic Dttlgiii Inc.- High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module r a iU illM G W Features T -H é -1 3 -H The EDI8M8512C/LP/P isa4096K bit CMOS Static 512KxS bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a Random Access Memory
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OCR Scan
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EDI8M8512C/LP/P
512Kx8
EDI8M8512C/LP/P
4096K
128Kx8
28Kx8
85-150ns
T-46-23-14
Th62
A17-A18j
LA 4570 F
LTDV
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EDI8M8257C
Abstract: EDI8M8257C25M6C EDI8M8257C30M6C EDI8M8257C35M6C EDI8M8257C45M6C EDI8M8257C55M6C
Text: _ EDI8M8257C m o\ B*c*ontc DMgrn inc. High Speed Two Megabft SRAM Module 256Kx8 Static RAM CMOS;Module m Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic two megabit
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OCR Scan
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
The32
EDI8M8257LP)
theEDBM8257C
EDI8M8257LP85P6C
EDI8M8257C25M6C
EDI8M8257C30M6C
EDI8M8257C35M6C
EDI8M8257C45M6C
EDI8M8257C55M6C
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Untitled
Abstract: No abstract text available
Text: ^ED I EDI8M8512C B «ctonie D«rigns Inc. High Speed Four Megabit SRAM Module ^ E U iO iM Y 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi layered ceramic substrate.
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OCR Scan
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EDI8M8512C
512Kx8
150ns
150ns
EDI8M8512C
4096K
128Kx8
EDI8M8512C35C6B
EDI8M8512C45C6B
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