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    S70NS Price and Stock

    Vishay Intertechnologies SI4559ADY-T1-E3

    MOSFETs -60V Vds 20V Vgs SO-8 N&P PAIR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI4559ADY-T1-E3 Reel 75,000 2,500
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    • 10000 $0.49
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    Vishay Intertechnologies SIZF920DT-T1-GE3

    MOSFETs Dual 30V Vds PowerPAIR 6x5F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SIZF920DT-T1-GE3 Reel 6,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.77
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    Vishay Intertechnologies SISS63DN-T1-GE3

    MOSFETs P-CHANNEL 20V PowerPAK 1212-8S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SISS63DN-T1-GE3 Reel 6,000
    • 1 -
    • 10 -
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    • 10000 $0.363
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    Vishay Intertechnologies SISS22LDN-T1-GE3

    MOSFETs N-CHANNEL 60V PowerPAK 1212-8S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SISS22LDN-T1-GE3 Reel 6,000
    • 1 -
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    • 10000 $0.436
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    S70NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S32HMD24926BAEA20

    Abstract: V20810-F6096-D670 5185941F60 DS4282-4 S30ML02GP S71PL129NB0HFW4B0 gwj7 Spansion S99 S71VS064KB0ZJK1B0 S19MN02GP30TFP00
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA August 19, 2010 Advanced Change Notification No: Subject: 2806 Obsolescence of the products listed below Product Identification: 1201-2648.1 43470D3 43470G6 4347255 4347289


    Original
    PDF 43470D3 43470G6 5103535B84 5185941F60 5199213K04 AM29LV640GU53RPCI DIG-00128-005 DS42824 PO71GL512NC0BAWEZ PO71WS256NDOBAEE7 S32HMD24926BAEA20 V20810-F6096-D670 5185941F60 DS4282-4 S30ML02GP S71PL129NB0HFW4B0 gwj7 Spansion S99 S71VS064KB0ZJK1B0 S19MN02GP30TFP00

    Untitled

    Abstract: No abstract text available
    Text: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25ns sTrr =s70ns TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED) PEAK1 CY SURGE


    OCR Scan
    PDF s70ns) 1N5807 1N5809 1N5811 1N6626 1N6627 1N6628 1N6629 1N6630 1N6631

    EDI8M8257C

    Abstract: DDD15L
    Text: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static


    OCR Scan
    PDF EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 The32 EDI8M8257LP) I8M8257LP85P6C EDI8M8257LP100P6C DDD15L

    t1is

    Abstract: No abstract text available
    Text: ELECTRONIC DESIGNS INC ^ED I 3QE D Elaekontfi Dislgns Inc. » • 3530114 0000714 b ■ EDI8M8257C/LP/P High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a


    OCR Scan
    PDF QD00714 EDI8M8257C/LP/P 256Kx8 EDI8M8257C/LP/P 2048K 128Kx8 the128Kx8 T-46-23-14 ED18M8257C/LP/P 85-150ns t1is

    QDQ0745

    Abstract: No abstract text available
    Text: ELECTRONIC m o D ESIG N S INC 3QE D • 3230114 Q00Q741 EDI8M8512C/LP/P i Electronic D»t!gni Inc. High Speed Four Megabit S R A M Module 512Kx8 Static R A M C M O S, Module L O if llM m T Features T -H 6 -2 3 -W The EDI8M8512C/LP/P is a 4096K bit CMOS Static 512Kx8 bit CMOS Static


    OCR Scan
    PDF EDI8M8512C/LP/P 512Kx8 EDI8M8512C/LP/P 4096K 128Kx8 28Kx8 0Q0a74a 85-160ns T-46-23-14 QDQ0745

    Th62

    Abstract: A17-A18j LA 4570 F LTDV
    Text: EDI8M8512C/LP/P Electronic Dttlgiii Inc.- High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module r a iU illM G W Features T -H é -1 3 -H The EDI8M8512C/LP/P isa4096K bit CMOS Static 512KxS bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a Random Access Memory


    OCR Scan
    PDF EDI8M8512C/LP/P 512Kx8 EDI8M8512C/LP/P 4096K 128Kx8 28Kx8 85-150ns T-46-23-14 Th62 A17-A18j LA 4570 F LTDV

    EDI8M8257C

    Abstract: EDI8M8257C25M6C EDI8M8257C30M6C EDI8M8257C35M6C EDI8M8257C45M6C EDI8M8257C55M6C
    Text: _ EDI8M8257C m o\ B*c*ontc DMgrn inc. High Speed Two Megabft SRAM Module 256Kx8 Static RAM CMOS;Module m Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit


    OCR Scan
    PDF EDI8M8257C 256Kx8 EDI8M8257C 2048K 128Kx8 the128Kx8 The32 EDI8M8257LP) theEDBM8257C EDI8M8257LP85P6C EDI8M8257C25M6C EDI8M8257C30M6C EDI8M8257C35M6C EDI8M8257C45M6C EDI8M8257C55M6C

    Untitled

    Abstract: No abstract text available
    Text: ^ED I EDI8M8512C B «ctonie D«rigns Inc. High Speed Four Megabit SRAM Module ^ E U iO iM Y 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate.


    OCR Scan
    PDF EDI8M8512C 512Kx8 150ns 150ns EDI8M8512C 4096K 128Kx8 EDI8M8512C35C6B EDI8M8512C45C6B