74168
Abstract: data sheet 74168 Si4910DY
Text: SPICE Device Model Si4910DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4910DY
18-Jul-08
74168
data sheet 74168
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00013
Abstract: 74167 SiE808DF
Text: SPICE Device Model SiE808DF Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiE808DF
S-60411Rev.
20-Mar-06
00013
74167
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SUM110N08-07
Abstract: SUM110N08-07-E3
Text: SUM110N08-07 Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 110 • TrenchFET Power MOSFET • New Low Thermal Resistance Package Available RoHS* APPLICATIONS COMPLIANT
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SUM110N08-07
42-VEP
O-263
SUM110N08-07-E3
18-Jul-08
SUM110N08-07
SUM110N08-07-E3
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SiF912EDZ
Abstract: No abstract text available
Text: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiF912EDZ
S-60410Rev.
20-Mar-06
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Si7860ADP
Abstract: No abstract text available
Text: Si7860ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 • TrenchFET Power MOSFET • PWM Optimized for High Efficiency • New Low Thermal Resistance PowerPAK®
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Si7860ADP
Si7860ADP-T1--E3
S-60419-Rev.
29-Mar-06
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S6018
Abstract: S6008 S6017 S-6037 S6010 S6029 S6046 s6016 S6022 S6047
Text: S6000 Series MIL-STD-981 Fixed Chip Inductors for Space Applications M83446/6 -01 to –48 With tabs FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical
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S6000
MIL-STD-981
M83446/6
MIL-PRF83446
MIL-STD-981,
M83446/06-21
M83446/06-22
M83446/06-23
M83446/06-24
S6021
S6018
S6008
S6017
S-6037
S6010
S6029
S6046
s6016
S6022
S6047
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V2323
Abstract: Si7970DP A2426
Text: SPICE Device Model Si7970DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7970DP
18-Jul-08
V2323
A2426
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Si9926BDY
Abstract: Si9926BDY SPICE Device Model
Text: SPICE Device Model Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si9926BDY
18-Jul-08
Si9926BDY SPICE Device Model
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60410
Abstract: Si7983DP
Text: SPICE Device Model Si7983DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7983DP
S-60410Rev.
20-Mar-06
60410
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Untitled
Abstract: No abstract text available
Text: SUM110N08-10 Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.010 at VGS = 10 V 110 • TrenchFET Power MOSFET • New Low Thermal Resistance Package Available RoHS* APPLICATIONS COMPLIANT
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SUM110N08-10
42-VEP
O-263
SUM110N08-10
SUM110N08-10-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUM110N08-07 Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.007 at VGS = 10 V 110 • TrenchFET Power MOSFET • New Low Thermal Resistance Package Available RoHS* APPLICATIONS COMPLIANT
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SUM110N08-07
42-VEP
O-263
SUM110N08-07
SUM110N08-07-E3
08-Apr-05
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74166
Abstract: Si5509DC 74166 applications 10VID
Text: SPICE Device Model Si5509DC Vishay Siliconix N- and P-Channel 20-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5509DC
18-Jul-08
74166
74166 applications
10VID
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Si8402DB
Abstract: No abstract text available
Text: SPICE Device Model Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si8402DB
18-Jul-08
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Si7983DP
Abstract: No abstract text available
Text: SPICE Device Model Si7983DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7983DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7860ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 • TrenchFET Power MOSFET • PWM Optimized for High Efficiency • New Low Thermal Resistance PowerPAK®
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Si7860ADP
Si7860ADP-T1--E3
18-Jul-08
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si7210
Abstract: a2724 Si7210DN
Text: SPICE Device Model Si7210DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7210DN
to-10-V
18-Jul-08
si7210
a2724
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ) 12 PowerPAK SO-8 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Si7392ADP
Si7392ADP-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7860ADP Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 • TrenchFET Power MOSFET • PWM Optimized for High Efficiency • New Low Thermal Resistance PowerPAK®
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Si7860ADP
Si7860ADP-T1--E3
08-Apr-05
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Delta Electronics dps 350
Abstract: Delta Electronics dps 600 Delta Electronics dps 250 S-4379 Delta Electronics dps 250 db Delta Electronics dps 200 Model 7908 tunnel diode specifications S-6033 Delta Electronics dps 500 "power supply"
Text: Micro Miniature and Surface Mount Low Pass Filters RLC Electronics' Micro Miniature Low Pass Filters utilize proprietary dielectric materials and manufacturing techniques to achieve performance rivaling much larger devices. Standard units are 0.05dB Chebychev
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rlcelectronics
Abstract: Delta Electronics dps 600 Delta Electronics dps 500 Delta Electronics dps 670 db Delta Electronics dps 250 db "Delta Electronics" dps 800 str 6052 Delta Electronics dps 250 Delta Electronics dps 350 str w 6052
Text: Micro Miniature and Surface Mount Low Pass Filters RLC Electronics' Micro Miniature Low Pass Filters utilize proprietary dielectric materials and manufacturing techniques to achieve performance rivaling much larger devices. Standard units are 0.05dB Chebychev
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PSM40-1
PSM40-FF
DC-40
rlcelectronics
Delta Electronics dps 600
Delta Electronics dps 500
Delta Electronics dps 670 db
Delta Electronics dps 250 db
"Delta Electronics" dps 800
str 6052
Delta Electronics dps 250
Delta Electronics dps 350
str w 6052
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74168
Abstract: data sheet 74168 Si4910DY
Text: SPICE Device Model Si4910DY Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si4910DY
S-60411Rev.
20-Mar-06
74168
data sheet 74168
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SiF912EDZ
Abstract: 3437S
Text: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SiF912EDZ
18-Jul-08
3437S
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74157
Abstract: 74157 datasheet 74157 download data sheet 74157 Si5482DU
Text: SPICE Device Model Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5482DU
to-10-V
18-Jul-08
74157
74157 datasheet
74157 download
data sheet 74157
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MIL-S-3928
Abstract: S6078 S-6064 S6052 s6064 S6050
Text: QPL Approved Switches RLC Electronics, Inc. a manufacture of high Quality mechanical Switches for over 40 years, is also Qualified to MIL-S-3928/xx-xx on the following part numbers: RLC Part Numbers Per MIL-S-3928 Cross Reference Table QPL P/N SLASH NO. OPTION NO.
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MIL-S-3928/xx-xx
MIL-S-3928
MILrS-3928/7
MIL-S-3928/8
MIL-S-3928/9
MIL-S-3928/10
MIL-S-3928/11
S-6022
S-6023
S-6024
MIL-S-3928
S6078
S-6064
S6052
s6064
S6050
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