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    S5J14M

    Abstract: No abstract text available
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR S5J14M Silicon Diffused Type Unit in mm High Speed Rectifier Applications 10.3 MAX Features • Repetitive peak reverse voltage: V RRM = 600V • Average forward current: Ip <av = 20A • Low saturation voltage: t^ = 0.25ns Max.)


    OCR Scan     		PDF S5J14M PW00080796 S5J14M

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45