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    FLIR Integrated Solutions BFS-U3-50S5C-C

    5.0MP COLOR U3 2/3" C-MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFS-U3-50S5C-C Box 9 1
    • 1 $878
    • 10 $878
    • 100 $878
    • 1000 $878
    • 10000 $878
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    FLIR Integrated Solutions BFS-PGE-50S5C-C

    5.0MP COLOR PGE 2/3" C-MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFS-PGE-50S5C-C Box 6 1
    • 1 $878
    • 10 $878
    • 100 $878
    • 1000 $878
    • 10000 $878
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    FLIR Integrated Solutions CM3-U3-50S5C-CS

    5.0MP COLOR U3 2/3" CS-MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CM3-U3-50S5C-CS Box 3 1
    • 1 $889.01
    • 10 $889.01
    • 100 $889.01
    • 1000 $889.01
    • 10000 $889.01
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    TT electronics / BI Technologies P083S-61S5CCR5K

    PANEL ROTARY POTENTIOMETER
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    DigiKey P083S-61S5CCR5K Tray 1,680
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    • 10000 $3.1512
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    Sager P083S-61S5CCR5K 1,680
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    • 10000 $3.12
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    TT electronics / BI Technologies P081N-271S5CCR1K

    PANEL ROTARY POTENTIOMETER
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    DigiKey P081N-271S5CCR1K Tray 2,600
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    • 10000 $1.5963
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    Sager P081N-271S5CCR1K 2,600
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    • 10000 $1.64
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    S5CC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S5CC Vishay Siliconix 5.0A Surface Mount Glass Passivated Rectifier Original PDF

    S5CC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    15544

    Abstract: No abstract text available
    Text: S5AC–S5MC Vishay Lite–On Power Semiconductor 5.0A Surface Mount Glass Passivated Rectifier Features D Glass passivated die construction D Low forward voltage drop and high current capability D Surge overload rating to 100A peak D Ideally suited for automatic assembly


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    D-74025 24-Jun-98 15544 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


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    MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    IT7230EFN

    Abstract: IT7230BFN IT7230 IT7230B C3H 16-pin QFN IT7230CM d 9329 000MA IT7231FN IT7230AFN
    Text: TI AL EN IT7230AFN / IT7230BFN / IT7230BM / IT7230CM / IT7230DFN / IT7230EFN/IT7231FN FI D Single Electrode Cap Sensor Controller Preliminary Specification V0.6 C O N For B Version ITE TECH. INC. This specification is subject to Change without notice. It is provided “AS IS” and for reference only. For


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    IT7230AFN IT7230BFN IT7230BM IT7230CM IT7230DFN IT7230EFN IT7231FN IT7230 IT7230B C3H 16-pin QFN d 9329 000MA PDF

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


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    MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


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    MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


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    MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    MUR6304HX

    Abstract: MUR6306HX
    Text: MOT OROL A SC DIODES/OPTO 3 e! E b3b?2S5 D 0002220 I MOT? S r ’- 0 3-^0 M OTOROLA SEMICONDUCTOR TECHNICAL DATA MUR6304HX, HXV MUR6305MX, HXV MUR6306HX, HXV mm m in i Discrete Military Operation Processed per Ml L-S-19500/550 Power Rectifiers Ultrafast Recovery


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    MUR6304HX, MUR6305MX, MUR6306HX, L-S-19500/550 MUR6304 MUR6305 MUR6306 do-203ab MUR6304HX MUR6306HX PDF

    TCST2001

    Abstract: telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001
    Text: TELEFUNKEN EL EC TR O N I C W fi^SüO^b Q007&3R b m k L G G J> TCST 1000 up to TCST 4001 tniQJltRLDKlCSiCÌI electronic _• ~7^ y / - 7 3 Creative Technologies Optoelectronic Interrupter without Aperture Construction: Emitter: GaAs-IR Emitting Diode


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    0GQ7fl44 TCST2001 telefunken tcst TCST1001 FLL100 EM 4001 TCST3001 TCST 2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: J - Z Z - o H SANSHA ELECTRIC MF6 CO SbE D M 7sJeH E 4 3 □□□DhQ4 TS4 H S E M J DIODE MODULE_ P P g S O H B •Maximum Ratings Syabol Unit Repetitive Peak Reverse Voltage V RRM V 1200 1600 Non-Repetitlve Peak Reverse Voltage V RSH V 1350 1700 Itea O P


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    M250HB-120 H250HB-160 125Tl 1T-200A S0B1A0451 PDF

    827ac

    Abstract: No abstract text available
    Text: V T C INC V T C S&fc. I NC, 990 □ D D im a 01148 ; D T - s i -on V54AC827 V74AC827 10-BIT BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS FEATURES •High Speed, 4.5ns Typical •Iq L/Io H " 24mA Commercial, 24mA Military •Low Input Current, 1 U.AMax •Fully Specified: 5V ± 10% Power Supplu, Min arid Max over


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    10-BIT r--co190 V54AC827 V74AC827 827ac PDF

    hy 1418

    Abstract: 79R79
    Text: T - 'RELiMiriÄR^ AM D3 Am79R79 Ringing Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Ideal for short-loop applications ■ Program m able constant-current feed ■ Ideal for ISDN terminal adaptor and fixed radio access applications ■


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    Am79R79 600nzL hy 1418 79R79 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 2 4 ^ 6 2 3 D D 2 3 f l7 t . MG2 MITSUBISHI LSIs • I1 IT 1 M5M4V4170J,TP,RT-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family o f 262144-w ord by 1 6 -bit dynamic RAMs,


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    4V4170J 4194304-BIT 262144-WORD 16-BIT 262144-w PDF

    TNY 176 PN EQUIVALENT

    Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
    Text: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.


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    PDF

    65SC32

    Abstract: G65Sc32P G65SC32 128X8 Programmable interval timer chip gte 262
    Text: I r h i J G 6 5 S C 3 2 Microcircuits_ CMOS RAM, I/O, Timer Features General Description • C M O S p rocess te c h n o lo g y fo r lo w p o w e r c o n s u m p tio n Th e G 65SC 32 is a p ro g ra m m a b le R AM , I/O , T im e r d evice fo r use w ith th e G 65SC XXX se rie s 8 -b it m ic ro p ro c e s s o r fam ily.


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    G65SC32 128X8 40-pin 44-pin G65SC32 G65SCXXX 25SK88S88 65SC32 G65Sc32P Programmable interval timer chip gte 262 PDF

    Untitled

    Abstract: No abstract text available
    Text: S5AC-S5MC Vishay Lite-On Power Semiconductor 5.0A Surface Mount Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • L o w fo rw a rd v o lta g e d ro p and high c u rre n t c a p a b ility • S u rg e o v e rlo a d ra tin g to 10 0 A p e a k


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    D-74025 24-Jun-98 PDF