JC547A
Abstract: JC546 JC547 C 548 B JC546B JC546A JC547B JC547C JC548 JC548A
Text: • bfc,S3S31 DDETRbfl 15b H A P X JC546 to 548 N AMER PHILIPS/DISCRETE b'ìE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in a plastic TO-92 especially suitable fo r use in driver stages o f audio amplifiers. QUICK REFERENCE D A T A
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S3S31
JC546
JC546
JC547
JC548
200mA
bbS3R31
2717b
JC547C
JC547A
C 548 B
JC546B
JC546A
JC547B
JC548
JC548A
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Untitled
Abstract: No abstract text available
Text: • bfc,S3S31 DDETTbfl 15b H A P X N AMER PHILIPS/DISCRETE JC546 to 548 b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N PN transistors in a plastic TO-92, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A
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S3S31
JC546
JC547
JC548
0027T72
bbS3R31
D0E757L,
JC546A
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Untitled
Abstract: No abstract text available
Text: LANCER ELECTRONICS CORP 4bA S3S317S OOQDOSD S LEC T-Si-Oq-fCe SPECIFICATIONS DIGITAL TO ANALOG CONVERTER DA121050 12 Binary Bits Resolution Output: Voltage 0 volts to +9.995 volts Impedance 5000 ohms +0.01% Zero Offset Less than -1.0 mv. tempco +10uv/°C Accuracy
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S3S317S
DA121050
10uv/Â
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Untitled
Abstract: No abstract text available
Text: i i N AUER PHILIPS/DISCRETE fc.SE D bt,S3S31 DDSflOSS SIT • APX MPSA92 MPSA93 HIGH VOLTAGE SILICON PLANAR TRANSISTORS P-N-P high voltage silicon planar transistors in plastic TO-92 envelope fo r general purpose applications. Q U IC K R EFER EN C E D A T A
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S3S31
MPSA92
MPSA93
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M54937SP
Abstract: M54937
Text: MITSUBISHI ICs AV COMMON M54937SP/FP/P SERIAL INPUT PLL FREQUENCY SYNTHESIZER FOR VCR DESCRIPTION The M54937SP/FP/P is a semiconductor integrated circuit , an oxide-film separated ECL/I2L PLL frequency synthesizer. The prescaler and PLL, with a maximum operating frequency
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M54937SP/FP/P
M54937SP/M54937FP/M54937P
50kHz/step)
M54937SP
M54937
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BLV95
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E LT E D bt>S3^31 □DSTlbM 03fl A BLV95 U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters for the 9 0 0 M H z com m unication band. Features • m ulti base structure and emitter-ballasting resistors fo r an o ptim um temperature profile
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BLV95
OT-171)
BLV95
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