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    S2V 16 Search Results

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    S2V 16 Price and Stock

    Hirose Electric Co Ltd DF11CZ-16DS-2V(22)

    Headers & Wire Housings 16P SMT RECEPTACLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DF11CZ-16DS-2V(22) 675
    • 1 $1.68
    • 10 $1.47
    • 100 $1.31
    • 1000 $0.939
    • 10000 $0.832
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    Hirose Electric Co Ltd DF11CZ-16DS-2V(52)

    Headers & Wire Housings 16P SMT RECEPTACLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DF11CZ-16DS-2V(52) 479
    • 1 $2.66
    • 10 $2.32
    • 100 $2.07
    • 1000 $1.48
    • 10000 $1.31
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    TE Connectivity DG1236R16-27S2 [V003]

    Standard Circular Connector PLUG ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DG1236R16-27S2 [V003]
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    • 100 $208.98
    • 1000 $208.98
    • 10000 $208.98
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    TE Connectivity YA81516F1012S2V003

    Circular MIL Spec Connector PLUG ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics YA81516F1012S2V003
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    • 100 $708.96
    • 1000 $708.96
    • 10000 $708.96
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    TE Connectivity YDG1236R1627S2V001

    Circular MIL Spec Connector PLUG ASSY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics YDG1236R1627S2V001
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    • 100 $613.75
    • 1000 $613.75
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    S2V 16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C502B

    Abstract: clock ma 1042
    Text: PL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION •     VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-125dBc @ 10kHz offset and 155.52MHz output) Selectable frequency multipliers (x1, x2, x4, x8


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    PDF PL602-00 25MHz -125dBc 10kHz 52MHz 25MHz) C502B PL602-00 -12ves C502B clock ma 1042

    clock ma 1042

    Abstract: C502A P602-00DC PLL602-00DC A-0303
    Text: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8


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    PDF PLL602-00 25MHz -135dBc 10kHz 25MHz) A0303-03H C502A PLL602-00 clock ma 1042 C502A P602-00DC PLL602-00DC A-0303

    XTAL 25MHz

    Abstract: 25Mhz datasheet crystal 155.52MHZ XTAL 25MHZ Datasheet C502A P502-00DC PLL502-00 PLL502-00DC
    Text: PLL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crystals • • • • • VDD S0V S1V S2V • 65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-130dBc @ 10kHz offset at


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    PDF PLL502-00 25MHz 500ppm -130dBc 10kHz 44MHz 25MHz) A0707-07A XTAL 25MHz 25Mhz datasheet crystal 155.52MHZ XTAL 25MHZ Datasheet C502A P502-00DC PLL502-00 PLL502-00DC

    marking 2u

    Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
    Text: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage


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    PDF SMBTA64 VPS05161 marking 2u marking code 10 sot23 S2V 3 BCW66 SMBTA64

    Untitled

    Abstract: No abstract text available
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    PDF SMBTA63, SMBTA64 VPS05161 SMBTA63

    Untitled

    Abstract: No abstract text available
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    PDF SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Aug-20-2001

    S2V 80

    Abstract: SMBTA63 SMBTA64
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    PDF SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Nov-30-2001 S2V 80 SMBTA63 SMBTA64

    DIODE in s2v

    Abstract: DIODE S2v DIODE S2v 50 DIODE S2v 01 S2V 80 S2V71 S2V7 diode color code
    Text: アキシャルダイオード 一般整流ダイオード Rectifier Diode Axial Diode •外形寸法図 OUTLINE DIMENSIONS Package:AX10 Unit : mm Weight:0.65g(typ.) 7+0.5 −0 26.5±2 26.5±2 φ4.4+0.2 −0.1 * 600V 1.7A φ1.0±0.1 S2V□


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    PDF PackageAX10 S2V71 S2V20 S2V60 25unless Tj150 wave50Hz DIODE in s2v DIODE S2v DIODE S2v 50 DIODE S2v 01 S2V 80 S2V71 S2V7 diode color code

    S2V 80

    Abstract: S2V 3 S2V 12
    Text: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V60 Unit : mm 600V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply


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    PDF S2V60 1mst10ms S2V 80 S2V 3 S2V 12

    S2V 80

    Abstract: f17a S2V 15 S2V 3 S2V20
    Text: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V20 Unit : mm 200V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply


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    PDF S2V20 1mst10ms S2V 80 f17a S2V 15 S2V 3 S2V20

    PLG100-VH

    Abstract: PLG150-DX Yamaha XG PLG100-XG PLG150-PF PLG150 PLG150-AN Yamaha PLG150-VL yamaha keyboard
    Text: Introducing the y S80 Working with XGworks 3.0 Lite XGworks 3.0 Lite is a Windows sequencing program included on the S80 CDROM. It can house several different software plug-ins designed to act as Voice Editors for the Modular Synthesis Plug-in System. The


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    PDF PLG150-DX PLG150-AN PLG150-VL PLG100-VH PLG150-PF PLG100-XG PLG100-VH PLG150-DX Yamaha XG PLG100-XG PLG150-PF PLG150 PLG150-AN Yamaha PLG150-VL yamaha keyboard

    Untitled

    Abstract: No abstract text available
    Text: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V


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    PDF ADG1421/ADG1422/ADG1423 10-lead 10-lead, ADG1421 ADG1421

    Untitled

    Abstract: No abstract text available
    Text: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V


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    PDF ADG1421/ADG1422/ADG1423 10-lead 10-lead, ADG1421 ADG1421 ADG14l

    ADG1421BRMZ

    Abstract: 08487 adg1421 ADG1422 10 lead analog devices b 11 S2V 80 ADG1423 ADG1433 S2V 3 10-Lead LFCSP footprint
    Text: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V No VL supply required


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    PDF ADG1421/ADG1422/ADG1423 10-lead 10-lead, ADG1421 ADG1421 ADG1422 ADG1421BRMZ 08487 ADG1422 10 lead analog devices b 11 S2V 80 ADG1423 ADG1433 S2V 3 10-Lead LFCSP footprint

    pz2-42

    Abstract: TM130DZ i7050 E80276 30-158 PZ-24 vot3
    Text: TM130DZ/CZ/PZ-24,-2H T M 1 3 0 D Z /C Z /P Z - 2 4 .- 2 H • IT A V • V rrm • V drm . 130A . 1 2 0 0 /1600V £ - £ * * à g L : t 7 « J Œ .1 2 0 0 /1600V


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    PDF TM130DZ/CZ/PZ-24 1200/1600V E80276 E80271 60HziEÂ pz2-42 TM130DZ i7050 E80276 30-158 PZ-24 vot3

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE C16T03Q C16T04Q 17.7A/30— 40V SQUARE-PAK FEATURES ° Similar to TO-263AB Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available


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    PDF C16T03Q C16T04Q O-263AB C16T03Q LL1S123

    s2v 92

    Abstract: No abstract text available
    Text: H ITACHI 2SA836 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER 4.2 Max ¡>2 Max 0 5 Max t . b n ii ic r 2. CoJJector X Ba*c il» mu» {JE0EC TO-92) • ABSOLUTE MAXIMUM RATINGS Ta=23»C) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SAS36 Symbol Unit


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    PDF 2SA836 2SAS36 2SAS36 s2v 92

    RCV57

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS i44cìb2QS DQ123S7 7bl « H I T M . ' HrTACHi blE » SDH/SONET O C -12 Lightwave Receiver RCV5702AN Features • • Complied with S O N E T /S D H standard • • InGaAs APD Operation at 622.08M b /s for 1.3^im or • 1.55|im wavelength


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    PDF DQ123S7 RCV5702AN 50-ohm RCV57

    c3v2

    Abstract: E526HN-100318 S3V 09 e526hna-100079 TOKO Inductance Test 10EZ TOKO 10EZ E526H E526HNA-100311 S2V 80 TOKO Inductance Test 10K
    Text: 98 MC120 Î3TOKO Moktod Colls TYPE MC120 Space Wound: Inductance Range 0.04-0.21 jiH Close Wound: Inductance Range0.04-0.53|iH Frequency Range: 3 0 -1 5 0 M H z': Temperature Coefficient: I5 0 p p m /°C , max. 1 II t fj Unit: mm Features • Popular for low profile applications.


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    PDF MC120 10EZ/10K TYPEMC120 c3v2 E526HN-100318 S3V 09 e526hna-100079 TOKO Inductance Test 10EZ TOKO 10EZ E526H E526HNA-100311 S2V 80 TOKO Inductance Test 10K

    Untitled

    Abstract: No abstract text available
    Text: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package


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    PDF A23b320 0Q172Ã BTA64 Q68000-A6419 Q68000-A6420 Q68000-A2625 Q68000-A2485 23b320 SMBTA64

    DIODE 24B

    Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
    Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750


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    PDF QM800HA-24B QM800HA-24B E80276 E80271 DIODE 24B DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g

    d2758

    Abstract: DIODE in s2v
    Text: DS3680I QUAD TELEPHONE RELAY DRIVER SLRS014B- D27S6, MARCH 1966 - REVISED APRIL 1993 Designed for -S2-V Battery Operation D O R N PA C K A G E TOP VIEW 50-mA Output Current Capability Input Compatible With TTL and CMOS 1 IN + [ 1 IN— [ 2 IN— [ 2 IN + [


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    PDF DS3680I SLRS014B- D27S6, 50-mA DS3680 nA3680 SLRSQ14B D2756. d2758 DIODE in s2v

    PCD3-5-1212

    Abstract: T-20 T-23 T-25 CHI MAI sfe 10,7ma 72ydc
    Text: PCD3- * - * EVALUATION DATA m a ? -* DWG No.C 136-53-01 APPD. CHK. DWG. H<hkL /V. 9/ / k } /'CTO 2 9 / j U / t o DENSEI-LAMBDA INDEX PAGE 1. Characteristics 1 —1 # # 1 4 Steady state data .T-1~16


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    PDF C136-53-01 100MHz 50Ksample/sec. PCD3-5-1212 T-20 T-23 T-25 CHI MAI sfe 10,7ma 72ydc

    Untitled

    Abstract: No abstract text available
    Text: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical


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    PDF P4C1981 /P4C1981L, P4C1982/P4C1982L l2/l5/20/25ns 20/25/35/45/55ns P4C1981L/1982L P4C1981/L P4C1982/L P4C1981/82 P4C1981L/82L