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    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    A 27631

    Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A1 27631A1 A 27631 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0

    Spansion S29GL256N90

    Abstract: S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Data Sheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte TBD--64-Ball 27631A0 Spansion S29GL256N90 S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90

    Spansion S29GL256N

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A3 Spansion S29GL256N

    A 27631

    Abstract: 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A1 27631A1 A 27631 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000

    MC5407

    Abstract: S29GL128M Spansion S29GL256N MCF5407 MCF5407UM S29GL128N S29GL256N S29GL512N s29gl512 MC5407UM
    Text: Taking Advantange of Page Mode Read On the MCF5407 Coldfire Application Note 1. Introduction Spansion LLC offers a class of flash-memory devices that dramatically reduce read access time. Devices such as the S29GLxxxN family of flash devices including the S29GL512N, S29GL256N, and the


    Original     		PDF MCF5407 S29GLxxxN S29GL512N, S29GL256N, S29GL128N) 25-ns 65-ns 16-bit MC5407 S29GL128M Spansion S29GL256N MCF5407UM S29GL128N S29GL256N S29GL512N s29gl512 MC5407UM

    s29gl512

    Abstract: 0000000-000FFFF 0700000-070FFFF
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Data Sheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte s29gl512 0000000-000FFFF 0700000-070FFFF

    Untitled

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte

    Untitled

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit process technology Data Sheet DATA SHEET For new designs, S29GL128N supersedes S29GL128M, and S29GL256N supersedes S29GL256M. These are factory-recommended product migrations. Please refer to the S29GLxxxN


    Original     		PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, S29GL128N S29GL256N S29GL256M.

    A 27631

    Abstract: 27631 s29gl512 S29GLxxxN 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 27631A4 A 27631 27631 s29gl512 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N

    Untitled

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte 27631A5

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


    Original     		PDF 52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    JS28F256P30

    Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
    Text: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 32-KByte 128-KByte 512-Mbit 64-Mbit RD48F2000P0ZBQ0 RD48F2000P0ZTQ0 PF48F2000P0ZBQ0 PF48F2000P0ZTQ0 128-Mbit RD48F3000P0ZBQ0 JS28F256P30 PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85

    Spansion

    Abstract: S29WS256N Spansion Flash
    Text: Optimizing Program/Erase Times Application Note Introduction As Flash memory storage capacity has increased, so has the amount of time required to program and erase the entire device. To facilitate faster, more cost effective program or erase, Spansion has introduced several features


    Original     		PDF S29WS256N 256M-bit, Spansion S29WS256N Spansion Flash

    intel 128MB NOR FLASH

    Abstract: intel 256MB NOR FLASH AP-825 1GB EASY BGA NOR FLASH 30678* intel AP812 AP-813 Migration Guide for Intel StrataFlash Memory Intel StrataFlash Memory j3 "NOR Flash" intel
    Text: 製品概要 Intel StrataFlash Intel StrataFlash® エンベデッド・メモリ エンベデッド・メモリ（P30） コスト・パフォーマンスに優れた 組み込み機器向け フラッシュ・ソリューションを提供 製品の概要


    Original     		PDF 130nm 40MHz 256Mb 128Mb 256Mb 512Mb AP-813 S29GLxxxN AP-825 intel 128MB NOR FLASH intel 256MB NOR FLASH 1GB EASY BGA NOR FLASH 30678* intel AP812 Migration Guide for Intel StrataFlash Memory Intel StrataFlash Memory j3 "NOR Flash" intel

    RC48F4400P0VB00

    Abstract: RD48F4400P0VTQ0 strataflash 512 p30 JS28F256P30T85 JS28F128P JS28F640P30B85 PC28F256P30T85 JS28F256P30 RC28F256P30B85 JS28F640P30T85
    Text: Intel StrataFlash Embedded Memory P30 1-Gbit P30 Family Datasheet Product Features • High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits


    Original     		PDF 4x32KB 3x128KB 64-Mbit 128-Mbit 256-Mbit 512-Mbit RD48F2000P0ZBQ0 RD48F3000P0ZBQ0 RD48F4000P0ZBQ0 RD48F4400P0VBQ0 RC48F4400P0VB00 RD48F4400P0VTQ0 strataflash 512 p30 JS28F256P30T85 JS28F128P JS28F640P30B85 PC28F256P30T85 JS28F256P30 RC28F256P30B85 JS28F640P30T85

    strataflash 512 p30

    Abstract: RC48F4400P0VB00 Migration Guide for Intel StrataFlash Memory J 3066* intel PF48F4400P0VTQ0
    Text: Intel StrataFlash Embedded Memory P30 Family Datasheet Product Features High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 32-KByte 128-KByte 256-Mbit 64-Mbit RD48F2000P0ZBQ0 RD48F2000P0ZTQ0 PF48F2000P0ZBQ0 PF48F2000P0ZTQ0 128-Mbit RD48F3000P0ZBQ0 strataflash 512 p30 RC48F4400P0VB00 Migration Guide for Intel StrataFlash Memory J 3066* intel PF48F4400P0VTQ0

    JS28F256P30T95

    Abstract: JS28F256P30B95 PC28F256P30T85 306667 RC48F4400P0VB00 JS28F256P30 JS28F128P30B85 js48f4400p0vb00 PC28F128P30T85 PC28F640P30T85
    Text: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 128-KByte JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 306667 RC48F4400P0VB00 JS28F256P30 JS28F128P30B85 js48f4400p0vb00 PC28F128P30T85 PC28F640P30T85

    SPANSION gl512

    Abstract: GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n
    Text: S71GL512NB0/S71GL256NB0/ S71GL128NB0 Stacked Multi-chip Product MCP 512/256/128 Megabit (32/16/8 M x 16-bit) CMOS 3.0 Volt-only MirrorBitTM Page-mode Flash Memory with 32 Megabit (2M x 16-bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics MCP Features


    Original     		PDF S71GL512NB0/S71GL256NB0/ S71GL128NB0 16-bit) S71GL128N, S71GL256N) S71GL512N) TLD084) TLA084) SPANSION gl512 GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n

    S29GLXXXP

    Abstract: S70GL02GS S29GLxxxS
    Text: Reset Voltage and Timing Requirements for MirrorBit Flash Application Note Synopsis MirrorBit NOR flash has several unique reset control signal timing requirements. Timing requirements vary by MirrorBit process and family 110 nm, 90 nm, 65 nm, GLxxxN, WSxxxP, etc… . System designers must


    Original     		PDF S29GLxxxN, S29PLxxxN, S29WSxxxN, S29NSxxxN S29GLxxxP, S29NSxxxP, S29WSxxxP S29GLxxxR, S29WSxxxR, S29NSxxxR, S29GLXXXP S70GL02GS S29GLxxxS

    JS28F256P33

    Abstract: JS28F256P33B95 PC28F128P33 PC28F256P33 RC28F256P33 intel MLC flash PC28F256P33B PC48F4400P0TB00 pc28f128p33b PC28F128P33B85
    Text: Intel StrataFlash Embedded Memory P33 Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 52MHz 32-KByte 128-KByte 64-Mbit RD48F2000P0XTQ0 PF48F2000P0XBQ0 PF48F2000P0XTQ0 RD48F3000P0XBQ0 RD48F3000P0XTQ0 PF48F3000P0XBQ0 JS28F256P33 JS28F256P33B95 PC28F128P33 PC28F256P33 RC28F256P33 intel MLC flash PC28F256P33B PC48F4400P0TB00 pc28f128p33b PC28F128P33B85

    sa450

    Abstract: 64mb 80 pin s29gl128n S29GL S29GL128N S29GL256N S29GL512N S71GS128NB0 S71GS256NC0 S29GL date code marking
    Text: S71GS256/128N based MCPs Stacked Multi-Chip Product MCP 256/128 Megabit (16/8M x 16-bit) CMOS 3.0 Volt VCC and 1.8 V VIO MirrorBitTM Uniform Sector Page-mode Flash Memory with 64/32 Megabit (4/2M x 16-bit) 1.8V pSRAM Data Sheet ADVANCE INFORMATION Distinctive Characteristics


    Original     		PDF S71GS256/128N 16/8M 16-bit) TLA084) S71GS S29GL sa450 64mb 80 pin s29gl128n S29GL128N S29GL256N S29GL512N S71GS128NB0 S71GS256NC0 S29GL date code marking

    PC28F256P30T85

    Abstract: JS28F256P30T95 RC48F4400P0VB00 PC28F640P30T85 JS28F256P30B95 RC28F640P30B85 JS28F256P30 RC28F256P30T85 PC28F640P30B85 306667
    Text: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 128-KByte PC28F256P30T85 JS28F256P30T95 RC48F4400P0VB00 PC28F640P30T85 JS28F256P30B95 RC28F640P30B85 JS28F256P30 RC28F256P30T85 PC28F640P30B85 306667