Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5095 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 5 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2 = 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC5095
2SC509
S21el2
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • Low Noise Figure NF = 2.5dB, |S2ie l2= 14.5dB f = 500MHz NF = 3.0dB, |S21el2= 9-0dB (f=lG H z) MAXIMUM RATINGS (Ta = 25°C)
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2SC3098
500MHz)
S21el2=
S21el2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2 S C 5 1 11 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FOR VCO APPLICATION M A X IM U M RATINGS ÍTa = 2 5 ° 0 U n i t in m m „ i.6 ±o.2 . ”3 fO H Ä> c ts 3 o «! |S21el TRANSITION FREQUENCY dB fT (GHz) DC CURRENT GAIN
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2SC5111
S21el
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05
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2SC5317FT
16GHz
S21el2
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5086FT 7<;r ^nsfiFT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S21el2 = lldB f=lG H z 1.2 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C)
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2SC5086FT
S21el2
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2SC5324
Abstract: No abstract text available
Text: T O S H IB A 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1
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2SC5324
2SC5324
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2SC4393
Abstract: No abstract text available
Text: TO SH IBA 2SC4393 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4393 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • • Low Noise Figure. NF= 1.5dB, |S21el2 = 16dB f= 500MHz NF= 1.7dB, |S2lel2 —10.5dB (f=1000MHz) m a v ì m i im
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2SC4393
500MHz)
1000MHz)
SC-70
2SC4393
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Untitled
Abstract: No abstract text available
Text: 2SC3099 5ILIC0N NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q5 ;'.h -0.3 • •t 0.25 Low Noise Figure. I'. 1 'i N F = 1.7dB, |S21e|2= 15dB f= 500MHz N F = 2.5dB, 3 |S21el2 = 9 .5 d B (f= lG H z )
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2SC3099
500MHz)
S21el2
SC-59
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR gy *\ - 2SC5093 TENTATIVE DATA U nit in mm VHF— UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. NF = l.ld B , |S21el2 = !3dB f = 1GHz 1 M A X IM U M RATINGS (Ta = 25°C)
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2SC5093
S21el2
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2SC4393
Abstract: No abstract text available
Text: TOSHIBA 2SC4393 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4393 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • • Low Noise Figure. NF= 1.5dB, |S21el2= 16dB f= 500MHz NF= 1.7dB, |S2lel2—10.5dB (f=1000MHz) M A X IM U M RATINGS (Ta = 25°C)
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2SC4393
500MHz)
1000MHz)
SC-70
S21el2
-j250
2SC4393
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 MAX. • Low Noise Figure, High Gain N F = 1.5dB, |S21el2 = 16dB f=500M Hz NF = 1.7dB, |S2iel2= 10.5dB (f = 1GHz)
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2SC2753
S21el2
-ji50
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2= 7.5dB f=2GHz + 0.25 .1 .5 -0 .1 5 .
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2SC5094
S21el2=
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5096 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC509 6 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2 = 7.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5096
2SC509
S21el2
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17NF2
Abstract: transistor J1c
Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR V H F - Ü H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • . + 0.Z 2 .9 - Q 3 Low Noise Figure, High Gain. N F = l.ld B , |S21el2=15dB f=lG H z 4 -Ò M A X IM U M R ATIN G S (Ta = 25°C) CHARACTERISTIC
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S21el2
2SC4320
--j250
--j50
17NF2
transistor J1c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT4S06 MT4S06 T O SH IB A TRA NSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE Unit in mm VHF— UHF B A N D LO W NOISE A M PLIFIER APPLICATIO NS + 0.2 2 .9 -0 .3 Low Noise Figure High Gain NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz -fi - S |S21el2= 11-5dB
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MT4S06
S21el2=
11-5dB
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • Low Noise Figure, High Gain • N F = l.ld B , |S21el2= 13dB f=lG H z + 0.25 . 1 .5 -0 .1 5
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2SC4317
S21el2=
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC3429 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3429 VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low N oise Figure • N F = 1.5dB, |S2ie l2= 16dB f= 500M H z • N F = 1.7dB, |S21el2= 10.5dB (f= lG H z ) U n it in mm MAXIMUM RATINGS (Ta = 25°C)
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2SC3429
S21el2=
S21el2
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transistor marking MK
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High. Gain : NF = 1.5dB f=2GHz : |S21el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5256F
S21el2=
20mAlease
transistor marking MK
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PDF
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2SC5324
Abstract: No abstract text available
Text: TO SH IBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1 CHARACTERISTIC
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2SC5324
2SC5324
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , S21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )
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2SC4394
IS21el2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN2C11FU
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Untitled
Abstract: No abstract text available
Text: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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2SC3607
-j250
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Untitled
Abstract: No abstract text available
Text: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)
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2SC5096
S21el2
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LT 7706
Abstract: LT 7207
Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)
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2SC5097
-j250
LT 7706
LT 7207
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