E1 PCM CODEC

Contextual Info: D S 2167/D S2168 DALLAS SEMICONDUCTOR D S 2 1 6 7 /D S 2 1 6 8 AD PCM Processor PIN ASSIGNMENT FEATURES • Speech compression chip compatible with standard ADPCM algorithms: RST : - DS2167 supports “new" T1Y1 recommenda­ tions July 1986 and “new” CCITT G.721 rec­

DS1231

Abstract: DS2167 DS2168 TP3054 TP3057
Contextual Info: D S 2167/D S2168 DALLAS SEMICONDUCTOR D S 2 1 6 7 /D S 2 1 6 8 AD PCM Processor PIN ASSIGNMENT FEATURES • Speech compression chip compatible with standard ADPCM algorithms: RST : - DS2167 supports “new" T1Y1 recommenda­ tions July 1986 and “new” CCITT G.721 rec­

Contextual Info: D S 2167/D S2168 DALLAS SEMICONDUCTOR FEATURES D S 2 1 6 7 /D S 2 1 6 8 ADPCM Processor PIN ASSIGNM ENT • Speech com pression chip com patible with standard ADPCM algorithm s: - - VDD RST [ 1 24 ] TMO [ 2 23 ] YIN DS2167 supports “new” T1Y1 recom m enda­

th 2167

Contextual Info: D S 2167 /D S 2168 DALLAS SEMICONDUCTOR D S 2 1 6 7 /D S 2 1 6 8 ADPCM Processor PIN ASSIGNMENT FEATURES - V3T- • Speech compression chip compatible with standard ADPCM algorithms: - - DS2167 supports “new” T1Y1 recommenda­ tions July 1986 and “new” CC1TT G.721 rec­

A70P1200-4

Abstract: G211261 A70P200-4TA A70P250-4TA a70p25-4 D200977 M219040 B215350 B213326 P217915
Contextual Info: Semiconductor A (AC)fuses Semiconductor fuses American Round Fuses Form 101 Range A70P Semiconductor Protection Fuses A70P Amp-trap Form 101 Semiconductor Protection fuses were developed for higher voltage AC and DC drives, UPS systems, reduced voltage motor starters and

S2183

Abstract: S2184 pico electronics transformers
Contextual Info: Ultra Miniature 400 Hz Transformers Page 1 of 4 Ultra Miniature 400 Hz Transformers .375 VA to 2.4 VA Primary Voltages of 115V or 26 V Printed Circuit Plug-In Construction Specifications Manufactured to MIL-PRF-27, Grade 5, Class S. 90º C Ambient. Input Primary 115v-400 Hz ±20 Hz or 26V-400Hz-±20Hz Your Choice-Just Choose The Proper Part No.

DS1231

Abstract: DS21 DS2167 DS2168
Contextual Info: D S 2 1 6 7 /D S 2 1 6 8 DS2167/S2168 DALLAS AD PCM Processor s e m ic o n d u c to r FEATURES • Speech com pression chip com patible with standard AD PC M algorithm s: - - PIN ASSIGNMENT RST c 1 24 ] VDD TMO [ 2 23 ] Y IN DS2167 supports “new ” T1Y1 recom m enda­

21683

Abstract: SI4913DY
Contextual Info: Si4913DY New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -9.4 APPLICATIONS 0.019 @ VGS = -2.5 V - 8.4

Contextual Info: DS2167/S2168 DALLAS SEMICONDUCTOR D S 2 1 6 7 /D S 2 1 6 8 ADPCM Processor FEATURES PIN ASSIGNM ENT • Speech compression chip compatible with standard ADPCM algorithms: - - DS2167 supports “new” T1Y1 recommenda­ tions July 1986 and “new” CCITT G.721 rec­

L8948

Abstract: T-22930 N6974 S21850
Contextual Info: Ultra Miniature 400 Hz Transformers Page 1 of 3 Ultra Miniature 400 Hz Transformers .375 VA to 2.4 VA Primary Voltages of 115V or 26 V Printed Circuit Plug-In Construction Specifications Manufactured to MIL-PRF-27, Grade 5, Class S. 90º C Ambient. Input Primary 115v-400 Hz ±20 Hz or 26V-400Hz-±20Hz Your Choice-Just Choose The Proper Part No.

Si1557DH

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

Si1557DH

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

Contextual Info: Si1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel P-Channel 12 -12 rDS(on) (W) ID (A) 0.235 @ VGS = 4.5 V 1.3 0.280 @ VGS = 2.5 V 1.2 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package

Contextual Info: Si4933DY New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.014 @ VGS = -4.5 V -9.8 APPLICATIONS 0.017 @ VGS = -2.5 V - 8.9

LINDNER fuses

Abstract: e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c
Contextual Info: Fuses – Fusegear Semiconductor Protection Fuses • Protistor Mapping 70 - 71 • American Round Fuses - Form 101 range 72 - 81 • Other American Round Fuses 82 • Ferrule-style Protistor fuses 83 - 87 • Protistor DIN standard fuses sizes 000-00 88 - 89

Contextual Info: DATA SHEET SKY13396-397LF: 0.7 to 3.0 GHz DPDT Switch Applications • Simultaneous voice and LTE systems  Diversity antenna switching PORT3 PORT4 PORT2 PORT1 Features  Single control voltage input  Broadband frequency range: 0.7 to 3.0 GHz  Low insertion loss: 0.5 dB @ 2.2 GHz

S21850

Abstract: N-6940 R-20950
Contextual Info: Ultra Miniature 400 Hz Transformers Page 1 of 5 Ultra Miniature 400 Hz Transformers .375 VA to 2.4 VA Primary Voltages of 115V or 26 V Printed Circuit Plug-In Construction Specifications Manufactured to MIL-PRF-27, Grade 5, Class S. 90º C Ambient. Input Primary 115v-400 Hz ±20 Hz or 26V-400Hz-±20Hz Your Choice-Just Choose The Proper Part No.

Contextual Info: DATA SHEET SKY13396-397LF: 0.7 to 3.0 GHz DPDT Switch Applications • Simultaneous voice and LTE systems  Diversity antenna switching PORT3 PORT4 PORT2 PORT1 Features  Single control voltage input  Broadband frequency range: 0.7 to 3.0 GHz  Low insertion loss: 0.5 dB @ 2.2 GHz

Contextual Info: D S 2167/D S 2168 DALLAS DS2167/S2168 ADPCM Processor SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Speech compression chip compatible with standard ADPCM algorithms: - - DS2167 supports “new" T1Y1 recommenda­ tions July 1986 and “new” CCITT G.721 rec­

SI7909DN

Contextual Info: Si7909DN New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.037 @ VGS = -4.5 V -7.7 0.048 @ VGS = -2.5 V - 6.8 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt Package D Advanced High Cell Density Process