Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S2 MARKING TRANSISTOR SURFACE Search Results

    S2 MARKING TRANSISTOR SURFACE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S2 MARKING TRANSISTOR SURFACE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PV OT666 AEC-Q101 g1 TRANSISTOR SMD MARKING CODE smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV

    smd transistor marking zf

    Abstract: transistor smd zf 2N7002PV
    Text: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PV OT666 AEC-Q101 771-2N7002PV-115 2N7002PV smd transistor marking zf transistor smd zf

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: DIODE smd marking CODE NZ bss138ps MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE 771-BSS138PS115
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138PS OT363 SC-88) AEC-Q101 771-BSS138PS115 BSS138PS NXP SMD TRANSISTOR MARKING CODE s1 DIODE smd marking CODE NZ MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1
    Text: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1

    Dual P-Channel MOSFET

    Abstract: g1 TRANSISTOR SMD MARKING CODE
    Text: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS84AKV OT666 AEC-Q101 771-BSS84AKV115 BSS84AKV Dual P-Channel MOSFET g1 TRANSISTOR SMD MARKING CODE

    sot363 aaa

    Abstract: BSS13
    Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138BKS OT363 SC-88) AEC-Q101 771-BSS138BKS115 BSS138BKS sot363 aaa BSS13

    S2 MARKING TRANSISTOR

    Abstract: transistor marking code G1 S2 MARKING TRANSISTOR surface 1G2D1 transistor marking G1 2N7002VAC-7 2N7002VC 2N7002VC-7 marking 030 D2G-1
    Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Lead-free Green Features • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed


    Original     		PDF 2N7002VC/VAC OT-563 2N7002VAC DS30639 S2 MARKING TRANSISTOR transistor marking code G1 S2 MARKING TRANSISTOR surface 1G2D1 transistor marking G1 2N7002VAC-7 2N7002VC 2N7002VC-7 marking 030 D2G-1

    amplifier for piezo sensor

    Abstract: Micronas hall sensor marking
    Text: DATA SHEET MICRONAS Edition Oct. 19, 2004 6251-439-2DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts


    Original     		PDF HAL320 6251-439-2DS HAL320 amplifier for piezo sensor Micronas hall sensor marking

    transistor k72

    Abstract: 2N7002DW mosfet k72
    Text: 2N7002DW NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original     		PDF 2N7002DW OT-363 OT-363, MIL-STD-202, DS30120 500mA transistor k72 2N7002DW mosfet k72

    S2 MARKING TRANSISTOR

    Abstract: marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot
    Text: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF 2N7002V/VA AEC-Q101 OT-563 J-STD-020C MIL-STD-202, DS30448 S2 MARKING TRANSISTOR marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot

    Untitled

    Abstract: No abstract text available
    Text: DMN32D2LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN32D2LV OT-563 J-STD-020C MIL-STD-202, DS31121

    KAG TRANSISTOR

    Abstract: DMN5L06V DMN5L06V-7 DMN5L06VA DMN5L06VA-7 g2 marking DIODE
    Text: DMN5L06V/VA NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Very Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN5L06V/VA OT-563 J-STD-020C DMN5L06V DMN5L06VA DS30604 KAG TRANSISTOR DMN5L06V-7 DMN5L06VA-7 g2 marking DIODE

    marking ADMI

    Abstract: marking ANs DMN5010VAK DMN5L06VAK DMN5L06VK DMN5L06VK-7 DS30769
    Text: DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		PDF DMN5/L06VK/L06VAK/010VAK OT-563 J-STD-020C MIL-STD-202, DS30769 marking ADMI marking ANs DMN5010VAK DMN5L06VAK DMN5L06VK DMN5L06VK-7

    diodes code va

    Abstract: VA MARKING
    Text: Not Recommended for New Design, Use 2N7002VC/VAC 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF 2N7002VC/VAC 2N7002V/VA AEC-Q101 OT-563 OT-563 J-STD-020D DS30448 diodes code va VA MARKING

    Untitled

    Abstract: No abstract text available
    Text: Hardware Documentation D at a S h e e t HAL 320 Differential Hall-Effect Sensor IC Family Edition Jan. 27, 2012 DSH000017_003EN HAL 320 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software


    Original     		PDF DSH000017 003EN OT89B HAL320 003EN. D-79108 D-79008

    k72 transistor

    Abstract: transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code
    Text: SPICE MODELS: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF 2N7002DW OT-363 OT-363, J-STD-020A MIL-STD-202, DS30120 500mA k72 transistor transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code

    DMN5L06DW

    Abstract: DMN5L06DW-7
    Text: DMN5L06DW NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-363 Very Low Gate Threshold Voltage Low Input Capacitance A Fast Switching Speed D2


    Original     		PDF DMN5L06DW OT-363 J-STD-020C DS30751 DMN5L06DW DMN5L06DW-7

    Untitled

    Abstract: No abstract text available
    Text: Hardware Documentation D at a S h e e t ® HAL 710, HAL 730, Hall-Effect Sensors with Direction Detection Edition Oct. 13, 2009 DSH000031_002EN HAL 710, HAL 730 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document


    Original     		PDF DSH000031 002EN 6251-4783DS. 002EN. D-79108 D-79008

    DMN5L06DMK

    Abstract: No abstract text available
    Text: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance


    Original     		PDF DMN5L06DMK AEC-Q101 OT-26 J-STD-020C DS30927 DMN5L06DMK

    Untitled

    Abstract: No abstract text available
    Text: • b b S a ' O l QQ24b5cl 72T « A P X N APIER P H I L I P S / D I S C R E T E BF570 b7E P 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. pre­ amplifiers of TV receivers in combination with surface acoustic wave filters.


    OCR Scan     		PDF QQ24b5cl BF570 OT-23

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    OCR Scan     		PDF 2SC3585 2SC3585 S22e-FREQUENCY

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. PACKAFE DIMENSIONS


    OCR Scan     		PDF 2SC3582 2SC3582 S22e-FREQUENCY

    transistor NEC D 586

    Abstract: TRANSISTOR R46
    Text: DATA SHEET SILICON TRANSISTOR 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.


    OCR Scan     		PDF 2SC4095 2SC4095 VP15-00-1 IR30-00-1 WS60-00-1 transistor NEC D 586 TRANSISTOR R46