C67078-S1308-A2
Abstract: BUZ21
Text: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current
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C67078-S1308-A2
Abstract: BUZ21
Text: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current
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BUZ21
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s1308 diode
Abstract: S1308 diode s1308 MMSF1308R2 motorola an569 thermal AN569 MMSF1308 SMD310
Text: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF1308 Low Power Surface Mount Products Single N-Channel MiniMOS Field Effect Transistor MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These
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MMSF1308/D
MMSF1308
s1308 diode
S1308
diode s1308
MMSF1308R2
motorola an569 thermal
AN569
MMSF1308
SMD310
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s1308 diode
Abstract: diode s1308 S1308
Text: MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source
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MMSF1308
MMSF1308/D
s1308 diode
diode s1308
S1308
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s1308 diode
Abstract: diode s1308 S1308 AN569 MMSF1308 MMSF1308R2
Text: MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source
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MMSF1308
r14525
MMSF1308/D
s1308 diode
diode s1308
S1308
AN569
MMSF1308
MMSF1308R2
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
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HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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BUZ21
Abstract: No abstract text available
Text: SIEMENS BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 21 Vbs 100 V b ^DSiort Package Ordering Code 21 A 0.085 Q TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current h Values
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Untitled
Abstract: No abstract text available
Text: BUZ 21 Infineon •chnologiês SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b f f DS(on Package BUZ 21 100 V 21 A 0.085 Q TO-220 AB ’ Ordering Code C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current
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C67078-S1308-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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BUZ21
Abstract: sis8
Text: SIEM ENS BUZ 21 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vps A ^DS on) Package 1> Ordering Code BUZ 21 100 V 21 A 0.085 £2 TO -220 AB C67078-S1308-A2 M axim um Ratings Param eter Continuous drain current, Tc = 25 'C
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C67078-S1308-A2
BUZ21
sis8
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s1308 diode
Abstract: S1308 diode s1308
Text: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF1308 Low Power Surface Mount Products Motorola Preferred Device Single N-Channel MiniMOS Field Effect Transistor SINGLE TMOS POWER MOSFET 7 AMPERES 30 VOLTS
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MMSF1308/D
MMSF1308
s1308 diode
S1308
diode s1308
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s1308 diode
Abstract: diode s1308
Text: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF1308 Low Power Surface Mount Products Motorola Preferred Device Single N-Channel MiniMOS™ Field Effect Transistor MiniMOS™ devices are an advanced series of power MOSFETs
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MMSF1308/D
MMSF1308
s1308 diode
diode s1308
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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