Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11299-421
S11299
S11299-321
S11299-121
S11299-021
S5668
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product S5668
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16-element
S11299-421
S11299
S11299-321
S11299-121
S11299-021
S5668
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S11299-021
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11299-421
S11299
S11299-321
S11299-121
S11299-021
S5668
S11299-021
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Untitled
Abstract: No abstract text available
Text: 16素子Siフォトダイオードアレイ S11299-421 S11299シリーズ S11299-321 S11299-121 X線非破壊検査用の裏面入射型フォトダイオード アレイ狭基板幅タイプ S11299-021 裏面入射型構造を採用したＸ線非破壊検査用の16素子Siフォトダイオードアレイです。当社従来品 S5668シリーズ に比
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S11299-421
S11299ã
S11299-321
S11299-121
S11299-021
S5668ã
S11212ã
S11212-421
S11212-121
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type S11299-021 The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11299-421
S11299
S11299-321
S11299-121
S11299-021
S5668
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luminous pcb diagram
Abstract: No abstract text available
Text: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for X11290 Z-Power series is designed for high current operation and high flux output applications. Z-Power LED's thermal management perform exceeds other power LED solutions. Features • Super high Flux output
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X11290
luminous pcb diagram
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Untitled
Abstract: No abstract text available
Text: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for X1129X Z-Power series is designed for high current operation and high flux output applications. Z-Power LED's thermal management perform exceeds other power LED solutions. It incorporates state of the art SMD design and Thermal
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X1129X
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diode s1 77
Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28
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S1-118
S1-110
S1-103
S1-100
S1-122
S1-127
TTL11
TTL13
TTL15
TTL16
diode s1 77
S124
diode s1
diode s1 74
socket s1
S1-100
S1-128
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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x-ray cmos IMAGE SENSOR
Abstract: image sensor x-ray S11684
Text: X-ray detectors CHAPTER 09 1 Si photodiodes 2 Si photodiode arrays 2-1 2-2 2-3 2-4 Structure Features Applications New approaches 3 CCD area image sensors 3-1 3-2 3-3 3-4 Direct CCD area image sensors CCD area image sensors with scintillator How to use Applications
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S8558
Abstract: No abstract text available
Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ
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socket s1
Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND
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S1-90
S1-82
S1-79
S1-77
TTL10
TTL12
TTL14
TTL18
TTL44
SGND/D15
socket s1
diode s1 61
diode s1 77
diode s1 85
S124
040 d10
diode s1
diode s1 74
HW-133-PQ160
S1 18
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crimper CT 3508
Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
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HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
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s2513
Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Text: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing
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P-2631996
E146370
LR50370-10
SKINTOP00
s2513
MSM 7225
S1709
E146370
S1113
s1716
SLR-16
s2311
sm 314 1040 D1
S2438
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Untitled
Abstract: No abstract text available
Text: X線検出器 第 章 9 1 Siフォトダイオード 2 Siフォトダイオードアレイ 2-1 2-2 2-3 2-4 構造 特長 応用例 新たな取り組み 3 CCDエリアイメージセンサ 3-1 3-2 3-3 3-4 ダイレクト式CCDエリアイメージセンサ
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KACCC0461JA
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Untitled
Abstract: No abstract text available
Text: 16素子Siフォトダイオードアレイ S11212-421 S11212シリーズ S11212-321 S11212-121 S11212-021 X線非破壊検査用の裏面入射型 フォトダイオードアレイ 裏面入射型構造を採用したＸ線非破壊検査用の16素子Siフォトダイオードアレイです。当社従来品 S5668シリーズ に比
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S11212-421
S11212ã
S11212-321
S11212-121
S11212-021
S5668ã
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L11938
Abstract: s11850
Text: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS
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L11729,
L11730
C10910
T11262-01,
T11722-01
L12004-2190H-C,
D-82211
DE128228814
L11938
s11850
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11212-421
S11212
S11212-321
S11212-121
S11212-021
S5668
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PDF
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11212-421
S11212
S11212-321
S11212-121
S11212-021
S5668
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PDF
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Compaq deskpro
Abstract: bios call
Text: USER’S MANUAL NEC Corporation 1996 Document No. S11654EJ1V0UM00 1st edition Date Published December 1996 N Printed in Japan Compaq is a trademark of Compaq Computer Corporation. Deskpro is a registered trademark of Compaq Computer Corporation. Microsoft is a registered trademark of Microsoft Corporation.
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S11654EJ1V0UM00
Compaq deskpro
bios call
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC USER’S MANUAL /iP D 9 8 4 0 1 LOCAL ATM SAR CHIP NESCOT-SIO NEC Corporation 1994 Document No. S11380EJ3V0UM00 (3rd edition) (Previous No. IEU-1384) Date Published June 1996 P Printed in Japan The export of this product from Japan is prohibited without governmental license. To export or re-export this product from
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S11380EJ3V0UM00
IEU-1384)
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PDF
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ATM 814
Abstract: No abstract text available
Text: USER’S MANUAL NEC Corporation 1 9 9 6 Document No. S11653EJ1V0UM00 1st edition Date Published December 1996 N Printed in Japan M icrosoft, Visual C+, and W indows are tradem arks of M icrosoft Corp. WindowsNT is a tradem ark of M icrosoft Corp. PC/AT is a tradem ark of IBM Corp.
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S11653EJ1V0UM00
ATM 814
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PDF
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S1129
Abstract: No abstract text available
Text: ALPHA SEMICONDUCTOR S1129 Excellence in Analog Power Products 500mA Low Dropout Voltage Regulator Proposed Specification FEATURES • • • • • • • • • • • APPLICATION^ Output Accuracy 5V, 500mA Output Very Low Quiescent Current 0.4V Dropout Voltage
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AS1129
500mA
100mA
500mA
AS1129A/B
S1129
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PDF
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