Untitled
Abstract: No abstract text available
Text: CMOSリニアイメージセンサ S11106-10 S11107-10 小型で高いコストパフォーマンスを実現 S11106-10・S11107-10はビデオデータレート10 MHz低消費電流を実現した樹脂封止型のCMOSリニアイメージセンサ です。S11106-10の画素サイズは63.5 x 63.5 m、S11107-10は127 × 127 μmです。
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S11106-10
S11107-10
S11106-10ã
S11107-10ã
S11106-10:
S11107-10:
S11106-10,
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S11106
Abstract: ST32F S11107
Text: CMOS linear image sensors S11106 S11107 Compact size and high cost-performance The S11106 and S11107 are CMOS linear image sensors of resin sealing type that delivers a video data rate of 10 MHz and low current consumption. The pixel size is 63.5 x 63.5 m S11106 , 127 × 127 μm (S11107).
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S11106
S11107
S11107
S11106)
S11107)
S11106:
S11107:
KMPD1116E04
ST32F
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Untitled
Abstract: No abstract text available
Text: CMOS linear image sensors S11106 S11107 Compact size and high cost-performance The S11106 and S11107 are CMOS linear image sensors of resin sealing type that delivers a video data rate of 10 MHz and low current consumption. The pixel size is 63.5 x 63.5 m S11106 , 127 × 127 μm (S11107).
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S11106
S11107
S11106
S11107
S11106)
S11107)
S11106:
S11107:
B1201,
KMPD1116E07
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Untitled
Abstract: No abstract text available
Text: Package Information Vishay Siliconix MICRO FOOT: 16-BUMP 4 mm x 4 mm, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT 6 X Ø 0.150 ~ 0.229 Note b Solder Mask Ø ~ Pad Diameter + 0.1 Silicon A2 A A1 0.5 Bump Note a 4 3 2 1 b Diameter 0.5 A Recommended Land Pattern e Index-Bump A1
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16-BUMP
027ned
S11-1065-Rev.
13-Jun-11
13-Jun-11
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Image sensors
Abstract: ccd sensors
Text: Image sensors 1 CCD image sensors 1-1 1-2 1-3 1-4 Structure and operating principle Characteristics How to use New approaches CHAPTER 05 6 Photodiode arrays with amplifiers 6-1 6-2 6-3 6-4 6-5 Features Structure Operating principle Characteristics How to use
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14-Bit
Image sensors
ccd sensors
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C10500
Abstract: No abstract text available
Text: セレクションガイド 2013.11 イメージセンサ 幅 広 い 波 長 範 囲 に 対 応した 計 測 用 イメ ー ジ セ ン サ IMAGE SENSOR イメージセンサ 幅広い波長範囲に対応した 計測用イメージセンサ 浜 松ホトニクスは赤 外から可 視・紫 外・真 空 紫 外・
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S11830-3344MF
Abstract: No abstract text available
Text: NEWS 01 2011 Solid state PRODUCTS PAGE 11 Thumb-sized “ultra-compact spectrometer” with VIS-NIR response SOLID STATE PRODUCTS PAGE 16 New developments for the MPPC ELECTRON TUBE PRODUCTS PAGE 21 H2D2 light sources L11788 series, L11789 series SYSTEMS PRODUCTS
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L11788
L11789
C11367
DE128228814
S11830-3344MF
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Untitled
Abstract: No abstract text available
Text: DG3408, DG3409 Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG3408, DG3409 uses BiCMOS wafer fabrication technology that allows the DG3408/3409 to operate on single and dual supplies. Single supply voltage ranges from 3
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DG3408,
DG3409
DG3409
DG3408/3409
DG3408
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: DG611A, DG612A, DG613A Vishay Siliconix 1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION FEATURES The DG611A, DG612A and DG613A contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611
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DG611A,
DG612A,
DG613A
DG612A
DG613A
DG611
DG611A
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Untitled
Abstract: No abstract text available
Text: DG3535, DG3536 Vishay Siliconix 0.25 Low-Voltage Dual SPDT Analog Switch DESCRIPTION FEATURES The DG3535, DG3536 is a sub 1 0.25 at 2.7 V dual SPDT analog switches designed for low voltage applications. The DG3535, DG3536 has on-resistance matching (less
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DG3535,
DG3536
DG3536
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Untitled
Abstract: No abstract text available
Text: IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ44S, SiHFZ44S) • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)
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IRFZ44S,
IRFZ44L,
SiHFZ44S
SiHFZ44L
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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IRFZ24S,
IRFZ24L,
SiHFZ24S
SiHFZ24L
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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IRF614S,
SiHF614S
2002/95/EC
O-263)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
2002/95/EC
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: DG441L, DG442L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG441L, DG442L are low voltage pin-for-pin compatible companion devices to the industry standard DG441L, DG442L with improved performance.
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DG441L,
DG442L
DG442L
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: DG441, DG442 Vishay Siliconix Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG441, DG442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function.
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DG441,
DG442
DG442
DG441
DG201A/202
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
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IRFZ14S,
IRFZ14L,
SiHFZ14S
SiHFZ14L
2002/95/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: DG611A, DG612A, DG613A Vishay Siliconix 1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION FEATURES The DG611A, DG612A and DG613A contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611
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DG611A,
DG612A,
DG613A
DG612A
DG613A
DG611
DG611A
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S11074
Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground
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S11000
MIL-PRF83446
MIL-STD-981,
MIL-STD-202,
S11074
S11031
S11007
S11048
S11030
M83446
S11100
m83446/11
S11092
S11065
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Untitled
Abstract: No abstract text available
Text: DG9051, DG9052, DG9053 Vishay Siliconix Precision 8-Ch/Dual 4-Ch/Triple 2-Ch Low Voltage Analog Switches/Multiplexers DESCRIPTION FEATURES The DG9051, DG9052, DG9053 are low-voltage monolithic CMOS analog switches and multiplexers. DG9051 is an 8-channel multiplexer; DG9052 is a dual 4 channel
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DG9051,
DG9052,
DG9053
DG9053
DG9051
DG9052
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dg409 esd level
Abstract: DG408LDY
Text: DG408L, DG409L Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG408L, DG409L are low voltage pin-for-pin compatible companion devices to the industry standard DG408, DG409 with improved performance. Using BiCMOS wafer fabrication technology allows the
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DG408L,
DG409L
DG409L
DG408,
DG409
DG408L
dg409 esd level
DG408LDY
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PDF
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NC1 Device marking code
Abstract: No abstract text available
Text: DG3537, DG3538, DG3539, DG3540 Vishay Siliconix 4 , 360 MHz, Dual SPST Analog Switches DESCRIPTION FEATURES The DG3537, DG3538, DG3539, DG3540 are dual SPST analog switches which operate from 1.8 V to 5.5 V single rail power supply. They are design for audio, video, and USB
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DG3537,
DG3538,
DG3539,
DG3540
DG3540
2011/65/EU
2002/95/EC.
NC1 Device marking code
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology
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Original
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IRFZ24S,
IRFZ24L,
SiHFZ24S
SiHFZ24L
2002/95/EC
2011/65/EU
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PDF
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Untitled
Abstract: No abstract text available
Text: Package Information Vishay Siliconix MICRO FOOT: 8-BUMP 3 mm x 3 mm, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT 8 x Ø 0.150 ~ 0.229 Note b Solder Mask Ø ~ Pad Diameter + 0.1 Silicon 0.5 A2 A A1 Bump Note a 0.5 3 Recommended Land Pattern 2 1 b Diameter A e Index-Bump A1
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S11-1065-Rev.
13-Jun-11
13-Jun-11
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PDF
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