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    S11018 Price and Stock

    ECS International Inc ECS-110-18-5PXEN-TR

    CRYSTAL 11.0000MHZ 18PF SMD
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    DigiKey ECS-110-18-5PXEN-TR Digi-Reel 10,000 1
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    ECS-110-18-5PXEN-TR Cut Tape 10,000 1
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    ECS-110-18-5PXEN-TR Reel 10,000 1,000
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    Avnet Americas ECS-110-18-5PXEN-TR Reel 8 Weeks 1,000
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    Mouser Electronics ECS-110-18-5PXEN-TR 1,350
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    Master Electronics ECS-110-18-5PXEN-TR
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    Anytek Technology Corporation Ltd TS11018A0000G

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    TME TS11018A0000G 3,000
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    Interstate Connecting Components TS11018A0000G
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    Anytek Technology Corporation Ltd TS11018B0000G

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    Interstate Connecting Components TS11018B0000G
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    Anytek Technology Corporation Ltd TS11018C0000G

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    TME TS11018C0000G 3,000
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    Interstate Connecting Components TS11018C0000G
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    Anytek Technology Corporation Ltd TS11018D0000G

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    DigiKey TS11018D0000G Bulk 3,000
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    TME TS11018D0000G 3,000
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    Interstate Connecting Components TS11018D0000G
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    S11018 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ultra3 scsi

    Abstract: lsi logic SYM53C1000 serial eeprom logic symbios SYM53C1010-66
    Text: 04/28/00 Differences Between the SYM53C1010-66 and SYM53C1000 Systems Engineering Note S11018 Version 1.0 Introduction This SEN provides a description of the differences between the SYM53C1010-66 and the SYM53C1000. Both devices provide an Ultra160 SCSI solution. Both devices support a 66 MHz, 64-bit PCI bus.


    Original     		PDF SYM53C1010-66 SYM53C1000 S11018 SYM53C1010-66 SYM53C1000. Ultra160 64-bit SYM53C1000 ultra3 scsi lsi logic serial eeprom logic symbios

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    C10535E

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    SI5419D

    Abstract: PowerPAK ChipFET Single
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI5419D PowerPAK ChipFET Single

    Untitled

    Abstract: No abstract text available
    Text: SMMB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) () at VGS = 4.5 V 0.046 RDS(on) () at VGS = 2.5 V 0.063 ID (A)a • Halogen-free According to IEC 61249-2-21


    Original     		PDF SMMB406EDK SC-75-6L-Single SC-75 2002/95/EC 18-Jul-08

    S11074

    Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
    Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground


    Original     		PDF S11000 MIL-PRF83446 MIL-STD-981, MIL-STD-202, S11074 S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065

    DBM01

    Abstract: C10535J PD9611GT NEC 3780
    Text: データ・シート MOS集積回路 MOS Integrated Circuit µPD9611 ４チャネル PCM CODEC PD9611は，ITU-T勧告G.711，G.714に準拠したA則／μ則PCM CODECを４チャネル内蔵しており，PBXのアナ ログ加入者回路などのアプリケーションに最適です。


    Original     		PDF PD9611 PD9611ITU-TG 714APCM PD9611GT 48SOP375 S11018JJ2V0DS00 AN5-3200 108-0171NEC DBM01 C10535J PD9611GT NEC 3780

    Untitled

    Abstract: No abstract text available
    Text: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD23N06-31 2002/95/EC O-252 SUD23N06-31-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    marking 7E SOT-23 Diode

    Abstract: marking code vishay SILICONIX sot-23
    Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)


    Original     		PDF 2N7002E 2002/95/EC O-236 OT-23) 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 marking 7E SOT-23 Diode marking code vishay SILICONIX sot-23

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    C10535E

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD9611 FOUR-CHANNEL PCM CODEC The µPD9611 incorporates 4-channel A-law/µ-law PCM CODECs compliant with ITU-T Recommendation G.711/ G.714 and is suitable for applications such as PBX analog subscriber line circuits.


    Original     		PDF PD9611 PD9611 711/G C10535E

    Untitled

    Abstract: No abstract text available
    Text: SMMB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) () at VGS = 4.5 V 0.046 RDS(on) () at VGS = 2.5 V 0.063 ID (A)a • Halogen-free According to IEC 61249-2-21


    Original     		PDF SMMB406EDK SC-75-6L-Single SC-75 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    DBM01

    Abstract: C10535J NEC 3780
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD9611 PD9611ITU-TG 714APCM PD9611GT 48SOP375 S11018JJ2V0DS00 108-0171NEC 46017NEC 54024NEC DBM01 C10535J NEC 3780

    sot 23 marking code

    Abstract: No abstract text available
    Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)


    Original     		PDF 2N7002E 2002/95/EC O-236 OT-23) 11-Mar-11 sot 23 marking code

    Untitled

    Abstract: No abstract text available
    Text: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD23N06-31 2002/95/EC O-252 SUD23N06-31-GE3 11-Mar-11

    si5419

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 18-Jul-08 si5419

    Untitled

    Abstract: No abstract text available
    Text: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD23N06-31 2002/95/EC O-252 SUD23N06-31-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MARKING BF

    Abstract: SI5419DU PowerPAK ChipFET Single
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING BF PowerPAK ChipFET Single

    Untitled

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD23N06-31 2002/95/EC O-252 SUD23N06-31-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUD23N06-31-GE3

    Abstract: No abstract text available
    Text: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD23N06-31 2002/95/EC O-252 SUD23N06-31-GE3 18-Jul-08 SUD23N06-31-GE3

    marking 2N7002E-T1-E3

    Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
    Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)


    Original     		PDF 2N7002E 2002/95/EC O-236 OT-23) 18-Jul-08 marking 2N7002E-T1-E3 sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3

    si5419du

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF Si5419DU 2002/95/EC Si5419DU-T1-GE3 11-Mar-11