S10 diode
Abstract: IS813
Text: IS813 S10/S7/S5/S3: Photon Coupled Interrupter, 4 Pin Transistor, Fast Switching Datasheet ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055
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IS813
S10/S7/S5/S3:
BSI9000
CECC20000
S10/S7/S5/S
IS813S10
IS813S7
IS813S5
IS813S3
S10 diode
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SFH213
Abstract: SFH213 FA
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 213 SFH 213 FA SFH 213 FA SFH 213 Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH 213) und 750nm bis 1100nm (SFH 213 FA) • Kurze Schaltzeit (typ. 5 ns)
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400nm
1100nm
750nm
Q62702P0930
Q62702P1671
720-SFH213
SFH213
SFH213 FA
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lichtschranke
Abstract: OHF01034 OHF01773
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 213 SFH 213 FA SFH 213 FA SFH 213 Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH 213) und 750nm bis 1100nm (SFH 213 FA) • Kurze Schaltzeit (typ. 5 ns)
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400nm
1100nm
750nm
Q62702P0930
Q62702P1671
lichtschranke
OHF01034
OHF01773
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pnoz s10
Abstract: PILZ PNOZ 3 S10 safety relay 24 VDC SIP422 PILZ pnoz 9 Pilz Pnoz S10
Text: Contact expansion modules Up to PL e of EN ISO 13849-1 PNOZ s10 Unit features gory of the base unit. The contact expansion module may not exceed this. ` Positive-guided relay outputs: – 4 safety contacts N/O , instantaneous – 1 auxiliary contact (N/C), instantaneous
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NSG-D-2-401-2010-09
pnoz s10
PILZ PNOZ 3 S10 safety relay 24 VDC
SIP422
PILZ pnoz 9
Pilz Pnoz S10
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DUAL PWM 50 DUTY
Abstract: full bridge driver -allegro A3971SLB h bridge driver by pwm
Text: DUAL DMOS FULL-BRIDGE DRIVER ADVANCE INFORMATION Subject to change without notice October 1, 1999 24 LOGIC SUPPLY 2 23 PWM2 S10 3 22 S20 OUT1A 4 21 OUT2A LOAD SUPPLY1 5 20 LOAD SUPPLY2 GROUND 6 19 GROUND GROUND LOGIC GROUND VDD NC VBB1 VBB2 LOGIC 1 LOGIC
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A3971SLB
DUAL PWM 50 DUTY
full bridge driver -allegro
h bridge driver by pwm
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wiring diagram for dual pump control
Abstract: A3971 A3971SLB
Text: DUAL DMOS FULL-BRIDGE DRIVER ADVANCE INFORMATION Subject to change without notice May 2, 2000 NO CONNECTION 1 LOGIC GROUND 24 LOGIC SUPPLY 2 23 PWM2 S10 3 22 S20 OUT1A 4 21 OUT2A LOAD SUPPLY1 5 20 LOAD SUPPLY2 GROUND 6 19 GROUND GROUND 7 18 GROUND SENSE1
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PP-069-2
wiring diagram for dual pump control
A3971
A3971SLB
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A3971
Abstract: A3971SLB 9S1110 wiring diagram for dual pump control
Text: DUAL DMOS FULL-BRIDGE DRIVER ADVANCE INFORMATION Subject to change without notice May 2, 2000 NO CONNECTION 1 LOGIC GROUND 24 LOGIC SUPPLY 2 23 PWM2 S10 3 22 S20 OUT1A 4 21 OUT2A LOAD SUPPLY1 5 20 LOAD SUPPLY2 GROUND 6 GROUND 7 SENSE1 8 OUT1B 99 S11 10 PWM1
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Untitled
Abstract: No abstract text available
Text: 2014-01-13 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 213, SFH 213 FA SFH 213 SFH 213 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 213) and 750 nm to 1100 nm (SFH 213 FA) • Short switching time (typ. 5 ns)
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400nm
1100nm
D-93055
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SFH213
Abstract: No abstract text available
Text: 2011-10-20 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 SFH 213, SFH 213 FA SFH 213 SFH 213 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 213) and 750 nm to 1100 nm (SFH 213 FA) • Short switching time (typ. 5 ns)
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400nm
1100nm
D-93055
SFH213
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wiring diagram for dual pump control
Abstract: A3971 A3971SLB
Text: Data Sheet 29319.32 3971 DUAL DMOS FULL-BRIDGE DRIVER NO CONNECTION 1 LOGIC GROUND 24 LOGIC SUPPLY 2 23 PWM2 S10 3 22 S20 OUT1A 4 21 OUT2A LOAD SUPPLY1 5 20 LOAD SUPPLY2 GROUND 6 19 GROUND GROUND 7 18 GROUND SENSE1 8 17 SENSE2 OUT1B 99 16 OUT2B S11 10 15 S21
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PP-069-2
wiring diagram for dual pump control
A3971
A3971SLB
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842 ic
Abstract: D-68623 E72873 IC N10
Text: MWI 75-12 A5 IC25 = 90 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C
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D-68623
842 ic
E72873
IC N10
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diode T 3512
Abstract: D-68623 E72873 ds 35-12 e ixys MWI 35-12 A5
Text: MWI 35-12 A5 IC25 = 45 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C
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D-68623
diode T 3512
E72873
ds 35-12 e
ixys MWI 35-12 A5
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D-68623
Abstract: E72873
Text: MWI 50-12 A5 IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C
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D-68623
E72873
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IRK E78996 701819-303ac
Abstract: L240
Text: Bulletin I27094 rev. C 10/06 IRK.L240 SERIES MAGN-A-pak ™ Power Modules FAST RECOVERY DIODES Features Fast recovery time characteristics Electrically isolated base plate Industrial standard package Simplified mechanical designs, rapid assembly High surge capability
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I27094
E78996
IRK E78996 701819-303ac
L240
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TTL 7411
Abstract: PIN CONFIGURATION 7410 74LS11 function table TTL LS 7411 74 LS 00 Logic Gates LS 7411 74LS10 pin configuration TTL 7410 TTL 7410 AND propagation delay PIN CONFIGURATION 74ls10
Text: Signetics I 7410, 7411, LS10, LS11, S10, S11 Gates Logic Products Triple Three-Input NAND '10 , AND ('11) Gates Product Specification I TYPICAL PROPAGATION DELAY TYPE TYPICAL SUPPLY CURRENT (TOTAL) 7410 9ns 6mA 74LS10 10ns 1.2mA 74S10 3ns 12mA 7411 10ns 11mA
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74LS10
74S10
74LS11
74S11
N7410N,
N74LS10N,
N74S10N
N7411N,
N74LS11N,
N74S11N
TTL 7411
PIN CONFIGURATION 7410
74LS11 function table
TTL LS 7411
74 LS 00 Logic Gates
LS 7411
74LS10 pin configuration
TTL 7410
TTL 7410 AND propagation delay
PIN CONFIGURATION 74ls10
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LM 7410
Abstract: No abstract text available
Text: Signetics I 7410, 7411, LS10, LS11, S10, S11 Gates Logic Products Triple Three-Input NAND ’10 , AND ('11) Gates Product Specification • TYPICAL PROPAGATION DELAY TYPE TYPICAL SUPPLY CURRENT (TOTAL) 7410 9ns 6mA 74LS10 10ns 1.2mA 74S10 3ns 12mA 7411 10ns
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74LS10
74S10
74LS11
74S11
N7410N,
N74LS10N,
N74S10N
N7411N,
N74LS11N,
N74S11N
LM 7410
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TTL 7410
Abstract: 74LS11 function table 74LS10 pin configuration TTL 7410 AND propagation delay 7411 signetics
Text: Signetics I 7410, 7411, LS10, LS11 S10, S11 Gates Logic Products • Triple Three-Input NAND '10 , AND ('11) Gates Product Specification TYPICAL PROPAGATION DELAY TYPE TYPICAL SUPPLY CURRENT (TOTAL) 7410 9ns 6mA 74LS10 10ns 1.2mA 74S1Û 3ns 12mA 7411 10ns
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74LS10
74LS11
74S11
N7410N,
N74LS10N,
N74S10N
N7411N,
N74LS11N,
N74S11N
N74LS10D,
TTL 7410
74LS11 function table
74LS10 pin configuration
TTL 7410 AND propagation delay
7411 signetics
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TTL 7411
Abstract: TTL 7410 PIN CONFIGURATION 7410 PIN CONFIGURATION 7411 74LS10 pin configuration 7410 pin configuration 74LS10 function table 7411 ttl pin configuration of 7410 LS 7411
Text: Signetics I 74-10, 7411, LS10, LS11, S10, S11 Gates Logic Products Triple Three-Input NAND '10 , AND ('11) Gates Product Specification • TYPICAL PROPAGATION DELAY TYPE TYPICAL SUPPLY CURRENT (TOTAL) 7410 9ns 6m A 74LS 10 10ns 1.2m A 74S 10 3ns 12m A 7411
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74LS10
74S10
74LS11
74S11
N7410N,
N74LS10N,
N74S10N
N7411N,
N74LS11N,
N74S11N
TTL 7411
TTL 7410
PIN CONFIGURATION 7410
PIN CONFIGURATION 7411
74LS10 pin configuration
7410 pin configuration
74LS10 function table
7411 ttl
pin configuration of 7410
LS 7411
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Untitled
Abstract: No abstract text available
Text: 75 ISOCOM INC DE I 4f i fl ti S10 0 0 0 0 1 3 1 ISH 700, ISH 701 / / OPTICALLY COUPLED ISOLATORS FOR HYBRID APPLICATIONS »• v Package Dimensions in Inches (mm -7 , .040” (1.02) . 110” "(2,80) ’ .090” (2,29) ABSOLUTE MAXIMUM RATINGS (256C unless otherwise noted)
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Untitled
Abstract: No abstract text available
Text: u n ite d „ _ s e m ic o m f u c S o r s ^ C ~ « <5 D B E S10 3 /1 10 . F lip -C h ip Dual D io d e GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1nm stepper process including a bump technology. The parasitic inductances are reduced and result in
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DBES103/110
DSDBES1038211
SDBES1038211
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DIODE marking Sl
Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Text: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7
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HRW0202A
HRW0202B
HRW0203A
HRW0302A
HRW05
HRW0503A
HRW0702A
HRW0703A
HSM83
HSM88AS
DIODE marking Sl
s6 68a diode
diode marking b2
b1391
diode MARKING A9
IC MARKING 27A 6 PIN
MARKING 62Z
diode MARKING b3
S6 68A
621 marking diode
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transistor C 6092
Abstract: transistor tt 6093
Text: ISOCOfl C O M P O N E N T S LTD .V ?SC D • 4flflt,S10 □DOOiat, a i l ■ ISO T = -^ //-8 ^ SFH609-1, SFH609-2, SFH609-3 OPTICALLY COUPLED ISOLATORS ISOCOM, INC. 274 E HAMILTON AVE SUITE F CAMPBELL, CA. 95008 PACKAGE DIMENSIONS IN INCHES MM m r T m r
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SFH609-1,
SFH609-2,
SFH609-3
transistor C 6092
transistor tt 6093
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transistor 805A
Abstract: No abstract text available
Text: ISOC On C O M P O N E N T S LTD 7 SC D • t4ûflt>S10 QDQ025E bflE ■ ISO HOC 805Ü Optically Coupled Isolator FEATURES ABSO LU TE M AXIM U M RATINGS 25°C unless otherwise noted Photo-Darlington Output 7500 V Isolation High D C current transfer ratio - 500%
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QDQ025E
E91231)
MOC8050
transistor 805A
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AAAG 6 pin ic
Abstract: No abstract text available
Text: I S OC OM COMPONE NTS 7SC LTD D 4flat,S10 □□□□122 7 T 1 ISO T-'il~S 5' ICPL2730 ICPL2731 Dual Low InputCurrent HighGainOpto Isolators A B SO LU TE M A X IM U M R A T IN G S 25°C unless otherwise noted FEATU RES • High Current Transfer Ratio -10 0 0% Typical
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ICPL2730
ICPL2731
lbS10
AAAG 6 pin ic
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