diagram of high frequency pvc welding machine
Abstract: IM08-1B5PS-ZC1 CM30-16BPP-KC1 CM18-12NPP-KC1 IQ10-03BPS-KT1 sensor IM18-08BPS-ZC1 SICK MAKE IM08-1B5PS-ZT1 IM08-1B5PS-ZWK IM04-0B6PS-ZU1 zck m1
Text: C a t a l o g u e SICK Sensors for Automation I n d u c t i v e Pro x i m i t y S e n s o r s • C a p a c i t i v e Pro x i m i t y S e n s o r s M a g n e t i c P ro x i m i t y S e n s o r s • M a g n e t i c C y l i n d e r S e n s o r s Contents Glossary
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0603CS-101E
Abstract: 0603CS-4N7E 0603CS 0603CS-1N6E 0603CS-6N8E 0603CS-1N8E 0603CS-221E 0603CS-3N3E ScansUX83
Text: A hE U A Part Number 0603CS-1N6E TS 0603C S -1 N 8E T S 0603C S -2 N 2E T S 0603C S -3 N 3E T S 0603C S -3 N 6E T S 0603CS-3N9E TS 0603CS-4N3E TS 0603C S -4 N 7E T S 0603CS-5N1E T S 0603C S -5 N 6E T S 0603CS-6N8E TS 0603CS-7N5E TS 0603C S -8 N 2E T S 0603C S -8 N 7E T S
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0603CS
900MHz
0603CS-1N6E
250MHz
0603CS-1N8E
0603CS-2N2E
0603CS-3N3E
0603CS-101E
0603CS-4N7E
0603CS
0603CS-6N8E
0603CS-1N8E
0603CS-221E
0603CS-3N3E
ScansUX83
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MPF102
Abstract: J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112
Text: 2N3966 s n-channel JFET S ilico n ix Performance Curves NH See Section 5 designed fo r . . . • Analog Switches ■ Choppers ■ Commutators B EN EF IT S Low Insertion Loss, No Offset Voltage R DS on < 220 n Short Switching Aperture Times Crss < 1-5 pF t ( o n ) + tfoff) < 50 n s Typical
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-55to
220S2
Vqs-16
MPF102
J304
MPF102 model
2N3966
2N4416-16A
2N5555
2N5668-70
J304-5
MPF108
MPF112
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2n3459
Abstract: 2N3458 2N3460
Text: designed f o r Siliconix . Performance Curves N P See Sectiori 5 2N3459 • S m a ll-S ig n a l Low N o ise Am plifiers 2N3458 a n-channel JFETs B E N E F IT S • Operates from High Supply Voltages BVq s s > 5 0 V 2N3460 T O -1 8 See Se ctio n 7 • A B SO LU T E M A X IM U M R A T IN G S 25°C
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2N3458
2N3459
2N3460
2n3459
2N3458
2N3460
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FKN1W
Abstract: FKN2W
Text: FUSIBLE R E S IS T O R S INTRODUCTION I FEATURES T h e fu s ib le re s is to r c o n ta in s tw o fu n c tio n s in o n e p a c k a g e . It ’s a re s is to r u n d er n o rm a l c o n d i tio n s a n d a fu s e w h e n s u b je c te d to h ig her th a n
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FM100
FM200
FM300
100KOE
000022b
FKN1W
FKN2W
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d 5071 transistor
Abstract: b0507 BD509 BD50 transistor transistor bd509 SC 5071 BD5a BD50 bd 609 transistor BD507
Text: W tW Ö l T ~ S C ^ C X S T R S /R 6367254 » T | b 3 b 7 a s 4 F3- MOTOROLA SÇ_ XST_RS/R F>. 96D 8 0 5 9 9 o o f l ü s n D T -J J - 07 MOTOROLA •a SEM ICO ND U C TO R TECHNICAL DATA N P N S IL IC O N A U D IO T R A N S I S T O R S N P N S IL IC O N A N N U LA R *
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BD506,
BD508.
BD510
BD505.
BD505-1.
d 5071 transistor
b0507
BD509
BD50 transistor
transistor bd509
SC 5071
BD5a
BD50
bd 609 transistor
BD507
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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Untitled
Abstract: No abstract text available
Text: +-L1RJM S q u a re S M T El ec tre t C o n d e n s e r M icr o p h o n e SEM0506AH D im ensional Drawing Unlls:mm SEM 0506AH J _ T~ r r I m a x . 2 j0 •J¿ r S ensitivity R an ge - 3 2 +4-dB @ 1 K H z , V s = 2 V, R = 2 . 2 K Q Typical F re q u e n c y R e s p o n s e Curve @ $tift¿y|^
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SEM0506AH
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J210
Abstract: J211 J212
Text: H n-channel JFETs designed f o r . S ilic o n ix P erform ance Curves N ZF Se e Section 5 • G e n e r a l P u rp ose A m p lifie rs k> o < - K> B E N E F IT S • High Gain G p s = 7000 /¿mho Minim um J211, J212 • High Input Impedance IQ S S = 100 p A M axim um
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VDS-15V
J210
J211
J212
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2N4119
Abstract: 2N5902
Text: 2N4119A designed for H . S ilic o n ix Performance Curves NT See Section 5 • Ultra-High Input Impedance Amplifiers B E N E F IT S • Low Power Id S S < 9 ° mA 2 N 4 1 1 7 Electrometers pH Meters Smoke Detectors 2N4118A 2N4119 n-channel JFETs • Minimum Circuit Loading
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V131H
Abstract: No abstract text available
Text: HA Series ¡ n H A R R IS S E M I C O N D U C T O R Industrial High Energy Metal-Oxide Varistors M arch 1995 Features • R e c o g n ize d a s “ T ra n s ie n t V oltage S u rg e S u p p re s s o rs ” , UL File #E75961 to S td. 1449 • R ec o g n is e d as “T ra n s ie n t V oltage S u rg e S u p p re s s o rs ” , C S A File
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E75961
1050J
V131H
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Untitled
Abstract: No abstract text available
Text: Quality T o s a tis fy th e high te c h n ic a l d e m a n d s o f an o p e n w o rld m a rket, S + M C o m p o n e n ts h a s se t up e x te n s iv e q u a lity a s s u ra n c e s y s te m s . T h e s e a llo w fo r b o th g e n e ra l a n d e n h a n c e d re q u ire m e n ts of the
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101/Q
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pentode
Abstract: rca socket 12l8 rca radio Scans-0017305
Text: @ 1644 TWIN-PENTODE POWER AMPLIFIER For a p p l i c a t i o n s c r i t i c a l as to m a tc h in g o f th e p e n to de u n i t s Maximum Rat în g s, C h a ra c te r i s t i c s , Curves, Dim ensions, and Socket C o n n ectio n s f o r Type 1644 are th e same as th ose f o r Type 12L8-GT.
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apfi11cation
12L8-GT.
pentode
rca socket
12l8
rca radio
Scans-0017305
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |U |ICRO N 64K X M T58LC 64K 36C 4 36 S Y N C B U R S T SRAM 64K x 36 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES PIN ASSIGNMENT Top View • F a s t a c c e s s tim e s : 4.5, 5, 6 , 7 a n d 8 n s • F a s t O E a c c e s s tim e s : 5 a n d 6 n s
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T58LC
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DG308
Abstract: pulse stretcher 555 circuit diagram 5030a 5902 1N4148 1N914 HI201 "optical electronics" 9014 potentiometer AH0605
Text: 5902 d a t a a n d s p e c if ic a t io n s D E S C R IP T IO N AND IN S T R U C T IO N S Optical Electronics Incorporated PEAK SENSE A N D H O LD A N A LO G M EM O RY FEATURES A P P L IC A T IO N S • F A S T A C Q U I S I T I O N : 10V s te p in 1 . 5 /us
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300KHz
DG308
pulse stretcher 555 circuit diagram
5030a
5902
1N4148
1N914
HI201
"optical electronics"
9014 potentiometer
AH0605
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x20100
Abstract: j303001 J3030 D20200 J603001 R-T curves 601002 M202003 D30100 U2080
Text: A MODELS 10. 20, 30, 40, 50, 60 NTC Therm istors COMPANY OF TECHNO Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 7 different R-T curves • Configured for standard P.C. board mounting or assembly in probes S T A N D A R D E L E C T R IC A L S P E C IF IC A T IO N S a n d D IM E N S IO N A L C O N F IG U R A T IO N S
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92CS-9S32
Abstract: Photoconductive Cell S-15
Text: PHOTOCONDUCTÏVE CELL C A DM I U M- S UL FI D E , S I DE-ON TYPE H A V I N G S - 15 R E S P O N S E _ DATA General: .S-15 S p e c t r a l R e s p o n s e . W a v e le n g t h o f Maxim um R e s p o n s e . 5 8 0 0 ± 5 0 0 a n g s t r o m s
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92CS-9534
92CS-9S32
Photoconductive Cell
S-15
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Untitled
Abstract: No abstract text available
Text: 0 .0 6 0 " MAX RESISTANCE *» + 2 5 'C = 10,000 1 t 1% RESISTANCE/TEMPERATURE CURVE = " G " BETA ' f ( + 2 5 TO + 8 5 'C = 3 ,6 9 5'K NOMINAL DISSIPATION C O N S T A N T = 0.7 5 m W / ' C NOMINAL (S T ILL AIR) T H E R M A L TIME C O N S T A N T = 0 .35 S EC O N D S NO M INAL (STIRRED OIL)
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9224n
Abstract: 16-8-2-R V240R V100R
Text: RA Series F T ! HARRIS S E M I C O N D U C T O R Low Profile M etal-Oxide Varistors M arch 1995 Features • R e c o g n ize d as “T ra n s ie n t V oltag e S u rg e S u p p re s s o rs ” , U L #E75961 to S td. 1449 File • R e c o g n ize d a s “T ra n s ie n t V oltag e S u rg e S u p p re s s o rs ", C S A File
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E75961
9224n
16-8-2-R
V240R
V100R
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S25A3100
Abstract: S25A315HE S25A360FR S25A360S7
Text: R S M EtECTRO N /S ENS IT RQ N 7 1SE D | 75031,50 QOQQfllM î | ~~~ S E N S /T R O N S E M /C O N D UC TOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 F A X 516 242 9798 TECHN ICAL SPECIFICATION S AVAILABLE WITH
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75Q3hS0
S25A3100
S25A315HE
S25A360FR
S25A360S7
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MJ8503
Abstract: MJ8502 MJ8504 J8503
Text: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S
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MJ8502
MJ8503
Time-25Â
YI45M.
T0-204AA
MJ8504
J8503
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Untitled
Abstract: No abstract text available
Text: c p = G e n e r a l v S e m ic o n d u c t o r _ GF9410 N-Channel Enhancement-Mode MOSFET # V d s 30V R d S ON) 30mQ È (ri 0 Id 7A È S O -8 0.197 (5.00) 3 (4.80) n n n S n S S G i 0.157 (3.99) >.05 (1.27) 04 (1.02) □ □ □ DI 0.24 5(6.2 2)
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GF9410
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: U iM M ^ U te s PRODUCT SELECTION LISTING S S I-L X H M P 0 5 9 X X S E R I E S 2 x 5 P A N E L IN D IC A T O R A S S E M B L Y FEATURES • E a s y I n s ta lla tio n A P P LIC A TIO N S • F r o n t P a n e l I n d ic a to r • H ig h C o n t r a s t H o ld e r
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2SB637
Abstract: 2SB637K
Text: HITACHI 2 S B 6 3 7 k SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER 1. F .m ilier 2. Collector 3. Hase ( D im e n s io n s in m m ) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) lie r a MAXIMUM COLLECTOR DISSIPATION CURVE 2 S B 6 3 7 (le ) S y m b o l U n it VCBO
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2SB637
2SB637
2SB637K
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