Untitled
Abstract: No abstract text available
Text: PC4D10SNIP0F Series PC4D10SNIP0F Series High Speed 10Mb/s, High CMR Mini-flat 2-channel Package ∗OPIC Photocoupler • Description ■Agency approvals/Compliance PC4D10SNIP0F Series contains a LED optically coupled to an OPIC. It is packaged in a 8 pin mini-flat 2-ch output .
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PC4D10SNIP0F
PC4D10SNIP0F
10Mb/s,
10Mb/s)
10kV/Î
UL1577
E64380
PC4D10S)
EN60747-5-2(
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4D10S
Abstract: power supply 350W 12-pulse inverter audio amp 350w PC4D10SNIP0F PC4D10S e64380 ultrasonic level sensor transistor x 13002 EN60747-5-2
Text: PC4D10SNIP0F Series PC4D10SNIP0F Series High Speed 10Mb/s, High CMR Mini-flat 2-channel Package ∗OPIC Photocoupler • Description ■ Agency approvals/Compliance PC4D10SNIP0F Series contains a LED optically coupled to an OPIC. It is packaged in a 8 pin mini-flat 2-ch output .
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PC4D10SNIP0F
PC4D10SNIP0F
10Mb/s,
10Mb/s)
10kV/s.
UL1577
E64380
PC4D10S)
EN60747-5-2(
4D10S
power supply 350W
12-pulse inverter
audio amp 350w
PC4D10S
e64380
ultrasonic level sensor
transistor x 13002
EN60747-5-2
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MA2ZD02
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification A 0.625 0.3 0.5 ± 0.1 • Mini package (S-mini type 2-pin) • Reverse current (DC value) VR is low 1 0.16 − 0.06 2 Symbol Rating Unit VR 20 V
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MA2ZD02
MA2ZD02
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MA2ZD02
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification A 0.625 0.3 0.5 ± 0.1 • Mini package (S-mini type 2-pin) • Reverse current (DC value) VR is low 1 0.16 − 0.06 2 Symbol Rating Unit VR 20 V
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MA2ZD02
MA2ZD02
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Untitled
Abstract: No abstract text available
Text: 2SK1606 Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planer type Unit : mm For high-frequency rectification Anode current (DC value) VR is low (Low IR type of MA720) 0.3 ● Reverse 0.625 package (S-Mini type 2-pin) 0.5±0.1 ● Mini Cathode 1 0.7±0.1
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2SK1606
MA2ZD02
MA720)
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Untitled
Abstract: No abstract text available
Text: 3-Pin Super Mini Package S-Mini Package Outline Dimensions Outline Dimensions Unit: mm 2.9 ±0.2 0.16 +0.1 –0.06 0.4 +0.1 –0.05 1.5 +0.25 –0.15 2.5 +0.5 –0.3 1.1 +0.2 –0.1 1 0.3 3 2 0.95 0 ~0.1 0.95 Land Pattern Example Unit: mm 2.4 1.0 0.8 0.95
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236M1
236MOD
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marking 2D diode 2PIN
Abstract: No abstract text available
Text: 2SK1606 Schottky Barrier Diodes SBD MA784 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible
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2SK1606
MA784
100mA
100mA
marking 2D diode 2PIN
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Untitled
Abstract: No abstract text available
Text: 2SK963 Switching Diodes MA2S111 Tentative Silicon epitaxial planer type Unit : mm 1.60±0.05 For switching circuits +0.05 1.20–0.03 0.30±0.05 (0.2) +0.05 0.80–0.03 • Features ● Small S-Mini type 2-pin package 1 ● High-density mounting possible
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2SK963
MA2S111
100mA
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Untitled
Abstract: No abstract text available
Text: 2SK1606 Schottky Barrier Diodes SBD MA785 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible
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2SK1606
MA785
100mA
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MA2ZD14
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)
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MA2ZD14
MA2ZD14
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MA2ZD14
Abstract: marking k 2pin
Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)
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MA2ZD14
N-50BU
PG-10N)
SAS-8130)
MA2ZD14
marking k 2pin
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MA10701 SCHOTTKY diode
Abstract: MA741
Text: Package SS Mini Type 2 Pin D78 SS Mini Type 3 Pin (D2) S Mini Type 2 Pin (03) S Mini Type 3 Pin (D5) S Mini Type 4 Pin (D7) 5 Mini Type 6 Pin (D10) Mini Type 2 Pin (D11) Mini Type 3 Pin (D12) Mini Type 4 Pin (014) Mini Type 6 Pin (D16) Mini Power <D17) New Mini
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DO-34
MA700
MA704
MA732
MA795
MA795WA/WK*
MA2S728
MA781
MA781WA/WK*
MA728
MA10701 SCHOTTKY diode
MA741
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A4056
Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
Text: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type
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DO-34
DO-35
MA199
MA158
MA174
MA188
MA115
MA114
MA193
MA132WA
A4056
A4047
D83 ZENER
MA2430
A4091
MA207 460 00 16
A4100
A4160
A3100W
MA2Z200
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8.2 B2 ZENER
Abstract: 22 B2 zener 4.7 B2 zener NEC k 787 RD2.0S NEC ZENER NEC 7900 683 zener
Text: DATA SHEET NEC / ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD D E S C R IP T IO N P A C K A G E D IM E N S IO N S Type RD2.0S to RD120S Series are 2 PIN Super Mini in millimeter Mold Package zener diodes possessing an allowable power
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RD120S
RD120S
IEI-1209)
RD27S
RD30S
RD24S
8.2 B2 ZENER
22 B2 zener
4.7 B2 zener
NEC k 787
RD2.0S
NEC ZENER
NEC 7900
683 zener
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bcs47
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. e M BBOÌ2 PINNING - SOT323 PIN DESCRIPTION 1 base 2
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BC846W;
BC847W;
BC848W
OT323
MBC870
BC846W:
BC846AW
BC846BW
BC847W:
bcs47
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transistor NEC D 586
Abstract: sn 7441 ic nec 2701
Text: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain | S 2 i e |2 = | S 2 i e |2 • 11.5 dB TYP. @ = 10.5 dB TYP. @ Vce =
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2SC5178
SC-61
2SC5178-T1
2SC5178-T2
transistor NEC D 586
sn 7441
ic nec 2701
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a738
Abstract: A736 a737 A735 A7-35
Text: Z 2- 5 Z / t 9 - l 23 s i / t 7 y - ÿ New Mini Power Type (2-pin) Package Outline Diodes •«î m L ■ 4 $ t z t t V ' d h '/ < 7 > r - v T î o - M i- 12 2 .5 ± 0 .3 • U 7 P -, • 12m m X - fc° > t d 1 .4 ± 0 . 2 ■ Description New mini power type (2-pin) package is a new surface mount
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ZD00Series
MA2ZD00
a738
A736
a737
A735
A7-35
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MA8000 Series
Abstract: 2-pin package MA8000
Text: S $ 5 ï 2 Î â ,? ' /^ 'y ^ 7 " — V S Mini Type (2-pin) Package # f*-K Diodes U n it ! mm CO S 5 - M ( 2 S T f ) /< ? $ — '>'«:, K # W 5 - S ( 2 ^ ) / N ° y ^ r - v s (C j:b ^ ft5 0 % (D ii*(C ff ¿ ¿ i, 5 -S !!(2 S S :f ) f c P t f 0*1486SH#i#
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1486SH
MA116
A114/115
MA30W
MA728
MA729
MA732
aMA784
MA785
MA8000
MA8000 Series
2-pin package
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s11ms1
Abstract: No abstract text available
Text: SU M S1/S11M S2 Phototriac Couplers S 2 1 M S 1 /S 2 1 M S 2 SHARP ELEK/ MELEC DIV EbE S11MS1 /S11MS2 S21MS1 /S21MS2 1. 2. 3. 4. 5. For 100V lines S11MS1 S11MS2 ^ HSRPJ 4-Pin, Mini-flat Type Phototriac Coupler Features U ltra-com pact, m ini-flat p ack age type
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S1/S11M
S11MS1
/S11MS2
S21MS1
/S21MS2
500Vrms
S11MS2
S21MS2
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5223l
Abstract: M5233
Text: MITSUBISHI <LINEAR ICs> M 5 2 3 3 L , P, FR DUAL COMPARATOR DESCRIPTION The M 5223L,P,FP is a semiconductor circuit for a compara tor designed to operate over a wide supply voltage range from 2 to 36V from a single power supply, with two circuits in each 8-pin S IP and 8-pin DIP and 8-pin mini flat package. A
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5223L
M5233L
M5233P
M5233
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sem 5025
Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
Text: PRELIMINARY DATA SHEET S ilico n T ransistor juPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1
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uPA835TF
iPA835TF
2SC4959,
2SC4226)
sem 5025
ic 4440 for audio amplification
pe 5571
NEC 9736
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marking b1
Abstract: MAZF036 MAZF091
Text: Panasonic Z e n e r D iodes MAZF000 Serie s Silicon planer type Unit : mm Surge absorption circuit Cathode • Features Anode -W - • S-Mini type package 2-pin • No rank classification (Vz= 3.3 to 12V) si — Absolute Maximum Ratings (Ta= 25°C) Parameter
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MAZF000
AZF000
marking b1
MAZF036
MAZF091
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES LC2M 0 S 1 2-Bit, Serial 6 |xs ADC in 8-Pin Package AD7893 FEATURES Fast 12-Bit ADC with 6 fts Conversion Time 8-Pin Mini-DIP and SOIC Single Supply Operation High Speed, Easy-to-Use, Serial Interface On-Chip Track/Hold Amplifier Selection of Input Ranges
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AD7893
12-Bit
AD7893-10
AD7893-3
AD7893-2
AD7893-5
AD7893
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Untitled
Abstract: No abstract text available
Text: DS1012 D S1012 2-in-1 Sub-M iniature Silicon Delay Line with Logic DALLAS s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • All-silicon time delay • 53 |iW max. CM O S quiescent mode • Surface mount 8-pin mini-SOIC and standard 8-pin r\ir> IN1 C 1 e
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DS1012
S1012
DS1012
DS1012H
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