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    S-MINI 2-PIN PACKAGE Search Results

    S-MINI 2-PIN PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    S-MINI 2-PIN PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PC4D10SNIP0F Series PC4D10SNIP0F Series High Speed 10Mb/s, High CMR Mini-flat 2-channel Package ∗OPIC Photocoupler • Description ■Agency approvals/Compliance PC4D10SNIP0F Series contains a LED optically coupled to an OPIC. It is packaged in a 8 pin mini-flat 2-ch output .


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    PC4D10SNIP0F PC4D10SNIP0F 10Mb/s, 10Mb/s) 10kV/Î UL1577 E64380 PC4D10S) EN60747-5-2( PDF

    4D10S

    Abstract: power supply 350W 12-pulse inverter audio amp 350w PC4D10SNIP0F PC4D10S e64380 ultrasonic level sensor transistor x 13002 EN60747-5-2
    Text: PC4D10SNIP0F Series PC4D10SNIP0F Series High Speed 10Mb/s, High CMR Mini-flat 2-channel Package ∗OPIC Photocoupler • Description ■ Agency approvals/Compliance PC4D10SNIP0F Series contains a LED optically coupled to an OPIC. It is packaged in a 8 pin mini-flat 2-ch output .


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    PC4D10SNIP0F PC4D10SNIP0F 10Mb/s, 10Mb/s) 10kV/s. UL1577 E64380 PC4D10S) EN60747-5-2( 4D10S power supply 350W 12-pulse inverter audio amp 350w PC4D10S e64380 ultrasonic level sensor transistor x 13002 EN60747-5-2 PDF

    MA2ZD02

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification A 0.625 0.3 0.5 ± 0.1 • Mini package (S-mini type 2-pin) • Reverse current (DC value) VR is low 1 0.16 − 0.06 2 Symbol Rating Unit VR 20 V


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    MA2ZD02 MA2ZD02 PDF

    MA2ZD02

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planar type Unit : mm For high-frequency rectification A 0.625 0.3 0.5 ± 0.1 • Mini package (S-mini type 2-pin) • Reverse current (DC value) VR is low 1 0.16 − 0.06 2 Symbol Rating Unit VR 20 V


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    MA2ZD02 MA2ZD02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA2ZD02 Silicon epitaxial planer type Unit : mm For high-frequency rectification Anode current (DC value) VR is low (Low IR type of MA720) 0.3 ● Reverse 0.625 package (S-Mini type 2-pin) 0.5±0.1 ● Mini Cathode 1 0.7±0.1


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    2SK1606 MA2ZD02 MA720) PDF

    Untitled

    Abstract: No abstract text available
    Text: 3-Pin Super Mini Package S-Mini Package Outline Dimensions Outline Dimensions Unit: mm 2.9 ±0.2 0.16 +0.1 –0.06 0.4 +0.1 –0.05 1.5 +0.25 –0.15 2.5 +0.5 –0.3 1.1 +0.2 –0.1 1 0.3 3 2 0.95 0 ~0.1 0.95 Land Pattern Example Unit: mm 2.4 1.0 0.8 0.95


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    236M1 236MOD PDF

    marking 2D diode 2PIN

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA784 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible


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    2SK1606 MA784 100mA 100mA marking 2D diode 2PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK963 Switching Diodes MA2S111 Tentative Silicon epitaxial planer type Unit : mm 1.60±0.05 For switching circuits +0.05 1.20–0.03 0.30±0.05 (0.2) +0.05 0.80–0.03 • Features ● Small S-Mini type 2-pin package 1 ● High-density mounting possible


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    2SK963 MA2S111 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1606 Schottky Barrier Diodes SBD MA785 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible


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    2SK1606 MA785 100mA PDF

    MA2ZD14

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)


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    MA2ZD14 MA2ZD14 PDF

    MA2ZD14

    Abstract: marking k 2pin
    Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)


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    MA2ZD14 N-50BU PG-10N) SAS-8130) MA2ZD14 marking k 2pin PDF

    MA10701 SCHOTTKY diode

    Abstract: MA741
    Text: Package SS Mini Type 2 Pin D78 SS Mini Type 3 Pin (D2) S Mini Type 2 Pin (03) S Mini Type 3 Pin (D5) S Mini Type 4 Pin (D7) 5 Mini Type 6 Pin (D10) Mini Type 2 Pin (D11) Mini Type 3 Pin (D12) Mini Type 4 Pin (014) Mini Type 6 Pin (D16) Mini Power <D17) New Mini


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    DO-34 MA700 MA704 MA732 MA795 MA795WA/WK* MA2S728 MA781 MA781WA/WK* MA728 MA10701 SCHOTTKY diode MA741 PDF

    A4056

    Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
    Text: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type


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    DO-34 DO-35 MA199 MA158 MA174 MA188 MA115 MA114 MA193 MA132WA A4056 A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200 PDF

    8.2 B2 ZENER

    Abstract: 22 B2 zener 4.7 B2 zener NEC k 787 RD2.0S NEC ZENER NEC 7900 683 zener
    Text: DATA SHEET NEC / ZENER DIODES RD2.0S to RD120S ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD D E S C R IP T IO N P A C K A G E D IM E N S IO N S Type RD2.0S to RD120S Series are 2 PIN Super Mini in millimeter Mold Package zener diodes possessing an allowable power


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    RD120S RD120S IEI-1209) RD27S RD30S RD24S 8.2 B2 ZENER 22 B2 zener 4.7 B2 zener NEC k 787 RD2.0S NEC ZENER NEC 7900 683 zener PDF

    bcs47

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. e M BBOÌ2 PINNING - SOT323 PIN DESCRIPTION 1 base 2


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    BC846W; BC847W; BC848W OT323 MBC870 BC846W: BC846AW BC846BW BC847W: bcs47 PDF

    transistor NEC D 586

    Abstract: sn 7441 ic nec 2701
    Text: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain | S 2 i e |2 = | S 2 i e |2 • 11.5 dB TYP. @ = 10.5 dB TYP. @ Vce =


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    2SC5178 SC-61 2SC5178-T1 2SC5178-T2 transistor NEC D 586 sn 7441 ic nec 2701 PDF

    a738

    Abstract: A736 a737 A735 A7-35
    Text: Z 2- 5 Z / t 9 - l 23 s i / t 7 y - ÿ New Mini Power Type (2-pin) Package Outline Diodes •«î m L ■ 4 $ t z t t V ' d h '/ < 7 > r - v T î o - M i- 12 2 .5 ± 0 .3 • U 7 P -, • 12m m X - fc° > t d 1 .4 ± 0 . 2 ■ Description New mini power type (2-pin) package is a new surface mount


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    ZD00Series MA2ZD00 a738 A736 a737 A735 A7-35 PDF

    MA8000 Series

    Abstract: 2-pin package MA8000
    Text: S $ 5 ï 2 Î â ,? ' /^ 'y ^ 7 " — V S Mini Type (2-pin) Package # f*-K Diodes U n it ! mm CO S 5 - M ( 2 S T f ) /< ? $ — '>'«:, K # W 5 - S ( 2 ^ ) / N ° y ^ r - v s (C j:b ^ ft5 0 % (D ii*(C ff ¿ ¿ i, 5 -S !!(2 S S :f ) f c P t f 0*1486SH#i#


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    1486SH MA116 A114/115 MA30W MA728 MA729 MA732 aMA784 MA785 MA8000 MA8000 Series 2-pin package PDF

    5223l

    Abstract: M5233
    Text: MITSUBISHI <LINEAR ICs> M 5 2 3 3 L , P, FR DUAL COMPARATOR DESCRIPTION The M 5223L,P,FP is a semiconductor circuit for a compara­ tor designed to operate over a wide supply voltage range from 2 to 36V from a single power supply, with two circuits in each 8-pin S IP and 8-pin DIP and 8-pin mini flat package. A


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    5223L M5233L M5233P M5233 PDF

    sem 5025

    Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
    Text: PRELIMINARY DATA SHEET S ilico n T ransistor juPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1


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    uPA835TF iPA835TF 2SC4959, 2SC4226) sem 5025 ic 4440 for audio amplification pe 5571 NEC 9736 PDF

    marking b1

    Abstract: MAZF036 MAZF091
    Text: Panasonic Z e n e r D iodes MAZF000 Serie s Silicon planer type Unit : mm Surge absorption circuit Cathode • Features Anode -W - • S-Mini type package 2-pin • No rank classification (Vz= 3.3 to 12V) si — Absolute Maximum Ratings (Ta= 25°C) Parameter


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    MAZF000 AZF000 marking b1 MAZF036 MAZF091 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES LC2M 0 S 1 2-Bit, Serial 6 |xs ADC in 8-Pin Package AD7893 FEATURES Fast 12-Bit ADC with 6 fts Conversion Time 8-Pin Mini-DIP and SOIC Single Supply Operation High Speed, Easy-to-Use, Serial Interface On-Chip Track/Hold Amplifier Selection of Input Ranges


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    AD7893 12-Bit AD7893-10 AD7893-3 AD7893-2 AD7893-5 AD7893 PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1012 D S1012 2-in-1 Sub-M iniature Silicon Delay Line with Logic DALLAS s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • All-silicon time delay • 53 |iW max. CM O S quiescent mode • Surface mount 8-pin mini-SOIC and standard 8-pin r\ir> IN1 C 1 e


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    DS1012 S1012 DS1012 DS1012H PDF

    A335 Board

    Abstract: 6s6B Variable Capacitance Diodes ma72 ma337 Diode RJ 4B
    Text: Mini Type 2-pin Package :S (2 W f r V V j 'r - 'J Outline Variable Capacitance Diodes INDICATES CATHODE U n it ! mm X •fö m +io1 +1 IT U y -7+0.2 í - S J ( 2 í S H L) / ' Í 7 ' r - > l i . / J v S « i « t 5 C 0 7 " ' J > h S t ö h l e Ô l Z i m


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    MA321 MA333 MA339 MA353 MA329 MA337 MA341 A335 Board 6s6B Variable Capacitance Diodes ma72 Diode RJ 4B PDF