Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C
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MA2ZD14
SC-76
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type For high speed switching • Package ■ Features • Code SMini2-F3 • Pin Name 1: Anode 2: Cathode • Low forward voltage: VF < 0.40 V
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2002/95/EC)
MA2ZD140G
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MA2ZD14
Abstract: marking k 2pin
Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)
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MA2ZD14
N-50BU
PG-10N)
SAS-8130)
MA2ZD14
marking k 2pin
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MA2ZD14
Abstract: SC-76
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features Rating Unit
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MA2ZD14
MA2ZD14
SC-76
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MA2ZD14
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20 V
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MA2ZD14
MA2ZD14
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type For high speed switching • Package ■ Features M Di ain sc te on na tin nc ue e/ d • Code SMini2-F3 • Pin Name 1: Anode
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2002/95/EC)
MA2ZD140G
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MA2ZD14
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC)
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MA2ZD14
MA2ZD14
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MA2ZD14
Abstract: SC-76
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C
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MA2ZD14
MA2ZD14
SC-76
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SC-90A
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20 V
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MA2ZD14
SC-90A
N-50BU
PG-10N)
SAS-8130)
SC-90A
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marking F1 2pin
Abstract: No abstract text available
Text: MA2ZD14 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 • S-mini type 2-pin package • Low forward rise voltage V F V F < 0.4 V 2 0.5±0.1 0.16+0.1 –0.06 5˚ Symbol Rating Unit VR
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MA2ZD14
N-50BU
PG-10N)
SAS-8130)
marking F1 2pin
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MA2ZD140G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type For high speed switching • Package ■ Features • Code SMini2-F3 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou
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MA2ZD140G
MA2ZD140G
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MA2ZD140G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD140G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package ■ Features • Code SMini2-F3 • Pin Name 1: Anode
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MA2ZD140G
MA2ZD140G
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MA2ZD14
Abstract: SC-76
Text: Schottky Barrier Diodes SBD MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit VR 20 V Repetitive peak reverse voltage VRRM 20 V
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MA2ZD14
MA2ZD14
SC-76
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit: mm 1.25±0.1 For high speed switching 0.7±0.1 0.35±0.1 1 Repetitive peak reverse voltage VRRM Forward current (Average)
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MA2ZD14
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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S-Mini
Abstract: SSMini s-mini 2-pin package
Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes
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MA2Q705)
S-Mini
SSMini
s-mini 2-pin package
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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Untitled
Abstract: No abstract text available
Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3
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MA2D760
MA3D761
MA2D755
MA3D756
MA3D760
MA3U760
MA3D752
MA3D752A
MA3D755
MA3U755
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