Untitled
Abstract: No abstract text available
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
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ROGERS DUROID
Abstract: BLS6G2735L-30
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
ROGERS DUROID
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s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Abstract: J235 MS2601 J2-35
Text: MS2601 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 30 VOLTS POUT = 1.0 WATT GP = 5.2 dB MINIMUM INPUT/OUTPUT MATCHING GOLD METALLIZATION COMMON BASE CONFIGURATION DESCRIPTION: The MS2601 is a silicon NPN bipolar transistor designed
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MS2601
MS2601
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
J235
J2-35
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TRANSISTOR j115
Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ MS2603 J220 100 watts transistor s-band J115
Text: MS2603 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 30 VOLTS POUT = 5.5 WATTS GP = 5.6 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2603 is a silicon NPN bipolar transistor designed
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MS2603
MS2603
TRANSISTOR j115
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
J220
100 watts transistor s-band
J115
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s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2601 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 30 VOLTS POUT = 1.0 WATT GP = 5.2 dB MINIMUM INPUT/OUTPUT MATCHING
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MS2601
MS2601
MSC0858
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
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s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Abstract: J22 transistor
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2603 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 30 VOLTS POUT = 5.5 WATTS GP = 5.6 dB MINIMUM GOLD METALLIZATION
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MS2603
MS2603
500mA
MSC0858
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
J22 transistor
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BLS6G3135-120
Abstract: BLS6G3135S-120 TRANSISTOR BV 32
Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Preliminary data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.
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BLS6G3135-120;
BLS6G3135S-120
BLS6G3135-120
6G3135S-120
BLS6G3135S-120
TRANSISTOR BV 32
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smd transistor 6g
Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance
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BLS6G2731-6G
BLS6G2731-6G
smd transistor 6g
6G smd transistor
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
nxp 544
200B
TAJD106K035R
transistor equivalent table
sot975c
radar circuit component
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MS2604
Abstract: 100 watts transistor s-band 20 watts transistor s-band
Text: MS2604 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2604 is a silicon NPN bipolar transistor designed
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MS2604
MS2604
100 watts transistor s-band
20 watts transistor s-band
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BLS6G3135S-120
Abstract: BLS6G3135-120
Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-120;
BLS6G3135S-120
BLS6G3135-120
6G3135S-120
BLS6G3135S-120
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MS2609
Abstract: 100 watts transistor s-band
Text: MS2609 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 40 VOLTS GOLD METALLIZATION POUT = 50 WATTS GP = 6 dB MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2609 is a silicon NPN bipolar transistor specifically
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MS2609
MS2609
100 watts transistor s-band
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radar
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2609 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 40 VOLTS GOLD METALLIZATION POUT = 50 WATTS GP = 6 dB MINIMUM
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MS2609
MS2609
MSC0858
radar
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100 watts transistor s-band
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2604 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • • 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION
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MS2604
MS2604
MSC0858
100 watts transistor s-band
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Untitled
Abstract: No abstract text available
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 1 — 11 October 2011 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
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TB1238AN
Abstract: IC TB1238AN TA8269H TMPA8821PSNG TC90A85AF TMPA8823 TB1254AN TB1261ANG tb1238an toshiba TA7317P
Text: ASSPs Audio & Video Equipment ICs z 62 Communications Equipment ICs z 85 High-Frequency Power Amp ICs z 88 Automotive ICs z 89 Display Driver ICs z 92 Network & Interface ICs z 95 Peripheral Equipment LSIs z 96 Digital Temperature Compensation ICs z 97 Other Consumer Product ICs & LSIs z 98
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TMPA8812CxDNG
TMPA8821CxNG
TMPA8823CxNG
TMPA8827CxNG
TMPA8829CxNG
TMPA8857CxNG
TMPA8859CxNG
TMPA8812PSNG
P-SDIP56-600-1
TMPA8821PSNG
TB1238AN
IC TB1238AN
TA8269H
TMPA8821PSNG
TC90A85AF
TMPA8823
TB1254AN
TB1261ANG
tb1238an toshiba
TA7317P
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transistor 20107
Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer
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SA5200
SA611
SA2420
SA621
SA1620
SA1921
UAA2073
UAA2077AM
UAA2077BM
UAA2077CM
transistor 20107
transistor dk 50
PCD5042
bfg520w vco application note
BFG591 Application Notes
DK 51* transistor
bfg520 antenna preamplifier
BP547
bfg135 application note
MPSH10 small amplifier
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T4148
Abstract: AT-41486 AVANTEK transistor Tbb 38 Avantek UA-152
Text: AVANTEK INC EOE D avan tek • limitt 1 AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 86 Plastic Package Features • Low Noise Figure: 1.4 d B typical at 1.0 GHz 1.7 d B typical at 2.0 GHz • High Associated Gain: 18.0 dB typical at 1.0 GHz
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AT-41486
T4148
AVANTEK transistor
Tbb 38
Avantek UA-152
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Untitled
Abstract: No abstract text available
Text: CHK040A-SOA 40W Power Packaged Transistor GaN HEMT on SiC Description The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and
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CHK040A-SOA
CHK040A-SOA
300mA,
DSCHK040ASOA3021
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CRCW08050R0FKEA
Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P
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AN10933
BLF7G27LS-150P
IS-95,
BLF7G27LS-150P
CRCW08050R0FKEA
3214W-1-201E
S0805W104K1HRN-P4
BLF7G27-150P
GRM32ER7YA106K88L
GRM31MR71H105K88L
NJM 78L08UA-ND
30RF35
national 2n2222
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Untitled
Abstract: No abstract text available
Text: m AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor HEWLETT PACKARD Features • • • • • 86 Plastic Package Low Noise Figure:1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High AssociatedGain: 18.0 dB typical at 1.0 GHz 13.0 dB typical at 2.0 GHz
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AT-41486
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AN1032
Abstract: NES2427P-70
Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3
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NES2427P-70
NES2427P-70
24-Hour
AN1032
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3
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NES2427P-70
NES2427P-70
24-Hour
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Untitled
Abstract: No abstract text available
Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS
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Abstract: No abstract text available
Text: Part Number: Integra ILD3135M30 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET High Power Gain Excellent thermal stability Gold Metal Part number ILD3135M30 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band.
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ILD3135M30
ILD3135M30
300us
ILD3135M30-REV-NC-DS-REV-D
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