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    S 239 L SIEMENS Search Results

    S 239 L SIEMENS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy

    S 239 L SIEMENS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FOP 244 tn

    Abstract: No abstract text available
    Text: Waveforms for 72 pin Modules SIEMENS Semiconductor Group 239 Waveforms for 72 pin Modules SIEMENS fee fop ÌRAS - IH RAS V t V tc S H tfíCD • tn s H - tC R P tCAS - IH CAS ÍRAD ÍASR Address IH tfíA L tCAH Use Row ÍASR Row Column tcWL r a h tw e s WE


    OCR Scan     		PDF

    bc237 siemens

    Abstract: BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239
    Text: SIE » • SIEMENS flS35bQS G041540 134 « S I E G SIEMENS AKTIENGESELLSCHAF BC 237 . BC 239 NPN Silicon AF Transistors • High current gain • Low collector-emitter saturation voltage • Complementary types: B C 307, B C 308, BC 309 PNP Type BC BC


    OCR Scan     		PDF flS35bQS G041540 Q62702-C697 Q62702-C276 Q62702-C277 Q62702-C698 Q62702-C278 Q62702-C279 Q62702-C280 Q62702-C699 bc237 siemens BC238 BC239 BC237 237B C307B C238C C237B marking CODE 50G TO92 C-239

    AF 239 S

    Abstract: AF 239 af239 Germanium power S 239 L siemens
    Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 23SbQS Q62701-F51 oro-20 F--05 AF239S AF 239 S AF 239 af239 Germanium power S 239 L siemens

    transistor 1548 b

    Abstract: AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power
    Text: 2SC D m û23SbQS 0004075 4 IS IE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF T - 3 I - 07 for output, mixer, and oscillator stages up to 9 0 0 M H z AF 2 39 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads


    OCR Scan     		PDF 235b05 GGMG72 Q62701-F51 -13Silâ CE-10 aa35b05 af239s transistor 1548 b AF239 AF 239 S d 1548 Q62701-F51 af239s AF 239 Germanium power

    AF239

    Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
    Text: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.


    OCR Scan     		PDF A23Sb05 AF239 Q60106-X239 T1-0221) transistor h5c AF 239 0406H F239 Q60106-X239 WTV4 AAO-4A

    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon Darlington Transistors 32E D • flE 3 b 3 S G SIEMENS/ • • • • BCV 26 Q01bbb2 3 H SIP BCV46 SPCLi SEMICONDS For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type a B C V 26


    OCR Scan     		PDF Q01bbb2 BCV46 Q62702-C1151 Q62702-C1153 Q62702-C1493 Q62702-C1475 3b35Q BCV26

    L165 equivalent

    Abstract: LM675 equivalent PA12 TELEDYNE PHILBRICK 1022 TCA2465 equivalent sgs-thompson L165 sgs-thompson 3573AM 3581J 167 Teledyne
    Text: \ J tp C S f N I C R 0 T E C H M 0 L 0 4 Y POWER OPERATIO NAL AM PLIFIERS EQUIVALENT/SECOND SOURCES HTTP :/ / W W W .A P EX M IC R OT EC H .CO M 800 546-APEX (800) 546-2739 APEX ALTERNAnVES FOR EXISTING DESIGNS ALLEGRO (SPRAGUE) VLN3755W PA26 (page 195)


    OCR Scan     		PDF 546-APEX VLN3755W 3573AM 3573AMQ 3581J 3582J 3583J 3584/3584J 0PA12BM OPA2541 L165 equivalent LM675 equivalent PA12 TELEDYNE PHILBRICK 1022 TCA2465 equivalent sgs-thompson L165 sgs-thompson 167 Teledyne

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 16W Silicon Switching Diode • For high speed switching, applications Type Marking Ordering Code tape and reel BAS 16W A6s Q62702-A1050 Pin Configuration 1 2 3 A C Package SOT-323 Maximum Ratings Parameter Symbol Reverse voltage Vr B A S 16W


    OCR Scan     		PDF Q62702-A1050 OT-323 235bOS G12DS71

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIMOPAC MOSFET Module VDS lo ^ D S o n • • • • • • • BSM 191 F (C) = 1000 V = 28 A = 0.42 Q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a ’ ) Type


    OCR Scan     		PDF C67076-A1053-A2

    BUZ27

    Abstract: 14528 C67078-A1602-A2 0820C
    Text: öfiD D • ä23SbQS 0 0 1 4 5 2 0 88D 1 4 5 2 8 D 5 « S IE G ? f ? BUZ27 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 100 V Drain-source voltage V^js Continuous drain current = 26 A h Drain-source on-reslstance ^DS on = 0,06 a Description SIPMOS, N-channel, enhancement mode


    OCR Scan     		PDF BUZ27 C67078-A1602-A2 fl23SbQ5 0Q14S32 as35b05 oom533 BUZ27 14528 C67078-A1602-A2 0820C

    Untitled

    Abstract: No abstract text available
    Text: • S 1E M E N ! ÛS35bGS GGEGTBS ^ C3SIE6 SIEMENS AK TI EN GES ELLS CHAF M7E D 39-/5 SIMOPAC MOSFET Module BSM 191 F C Vbs = 1000 V /„ = 28 A ^DS(on) = 0.42 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode


    OCR Scan     		PDF S35bGS C67076-A1053-A2 53SbDS T-39-15 0235bG5

    BSS91

    Abstract: transistor ti p80 sik02232 sik02239 as3st
    Text: SIEMENS SIPMOS Small-Signal Transistor Vds ¡o = 240 V = 0 .3 5 A ^D S on = 6.0 Q • • • BSS 91 N channel Enhancem ent mode Package: TO -18 1> Not for new Type I BSS 91 design! Ordering code for version in bulk Q 62702-S457 Maxim um Ratings Parameter


    OCR Scan     		PDF 62702-S457 S53StDS SIK02239 00S42b3 BSS91 transistor ti p80 sik02232 sik02239 as3st

    Untitled

    Abstract: No abstract text available
    Text: öfiD D • ä23SbQS 0 0 1 4 5 2 0 88D 1 4 5 2 8 D S « S IE G T"~ ? f S ? BUZ27 SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-reslstance Description Case = 100 V V^is = 26 A


    OCR Scan     		PDF 23SbQS BUZ27 C67078-A1602-A2 aS35b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 20 Vbs 100 V *> ^DS on Package Ordering Code 13.5 A 0 .2 Q TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Continuous drain current Id 7b = 28 °C


    OCR Scan     		PDF O-220 C67078-S1302-A2 O-220AB GPT35155

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ÛE3b32G O Q lb T b b ISIP PNP Silicon High-Voltage Transistors BF 721; BF 723 _ SIEMENS/ SPCLi SEMICONDS _ r - s 3 - \ 7 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage


    OCR Scan     		PDF E3b32G Q62702 OT-223 Q627Q2 flS3b320 T-33-17

    NS160H

    Abstract: No abstract text available
    Text: SIEMENS BSM 100G D120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 100 GD 120 DN2 h VCE 1200V 150A Package Ordering Code


    OCR Scan     		PDF GU10H76 NS160H

    IC 7447

    Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
    Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222


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    BC308

    Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
    Text: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN


    OCR Scan     		PDF flE35bD5 004155b Q62702-C703 Q62702-C283 Q62702-C324 Q62702-C704 Q62702-C285 Q62702-C286 Q62702-C393 Q62702-C705 BC308 bc307 siemens BC307 bc307a BC 309 BC307B BC 307 BC309C bc 374

    af239

    Abstract: AF 239 siemens I SIEMENS Germanium
    Text: ESC D • fl23Sb05 DQOMObb R PNPGermanium RFTransistor WMSIEG 25c 04066 SIEMENS AKTIENGESELLSCHAF - 0 AF239 ~0T~-3t~ 0*7 fo r UHF in p u t stages up to 9 0 0 M H z AF 2 3 9 is a germanium PNP mesa transistor in TO 7 2 case 18 A 4 DIN 4 1 8 7 6 . T he leads


    OCR Scan     		PDF fl23Sb05 AF239 235bQ5 00DMD71 AKTIENGESELLSCHAFT4071 F--02 af239 AF 239 siemens I SIEMENS Germanium

    Transistoren DDR

    Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
    Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60


    OCR Scan     		PDF SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369

    SE 194

    Abstract: matsua capacitor electrolytic
    Text: Aluminum Electrolytic Capacitors High-perform ance capacitor with screw terminals For professional power supply units and applications in power electronics High current handling capability Al ca s e w ith in s u la tin g sle e ve M o u n tin g by ring c lips or th re a d e d stud "


    OCR Scan     		PDF B43550-A4159-Q B43550-B4338-Q B43550-C4606-Q B43S70-B433B-0 B43570-F687-Û SE 194 matsua capacitor electrolytic

    62703-Q

    Abstract: No abstract text available
    Text: SIEMENS LC 5 mm T1 3/4 LED, Diffused Low Current LED LS 5469, LY 5469, LG 5469 Besondere Merkmale • eingefärbtes, diffuses G e h ä u se • als optischer Indikator einsetzbar • hohe Lichtstärke bei kleinen Stöm en (typ. 2 mA) • Lö tspieß e ohne A ufsetzebene


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    4274v50

    Abstract: TLE4274V50 Q67000-A9256 Q67000-A9257 Q67000-A9258 Q67006-A9259 Q67006-A9260 Q67006-A9261 P-T0220-3-1 TLE4274
    Text: SIEMENS " a23Sb0S Mt3 jl_ g 4274 L o w -D ro p V o lta g e R e g u la to r Features • • • • • • Output voltage tolerance < ± 4 % Low-drop voltage Very low current consumption Short-circuit proof Reverse polarity proof • Suitable for use in automotive electronics


    OCR Scan     		PDF a23Sb0S Q67000-A9256 P-T0220-3-1 Q67000-A9257 Q67000-A9258 Q67006-A9259 P-T0263-3-1 Q67006-A9260 4274v50 TLE4274V50 Q67006-A9261 P-T0220-3-1 TLE4274

    transistor 2sc 548

    Abstract: equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649
    Text: asc D • asBSbos o o o m io T M S IE G NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENÛESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 55 0 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and


    OCR Scan     		PDF BC5461Â Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 BC5481Â transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 Bc 649 transistor bc 647 BC5481 BC649