DMU-30DCV
Abstract: 999VDC TB1 160
Text: DMU-30DCV Series www.murata-ps.com Ruggedized DC Voltmeters with Daylight Readable Auto-Dimming LED Displays FEATURES • Measure and accurately display dc voltages in harsh environments ■ Four input ranges: ±200mVdc, ±2Vdc, ±20Vdc, and ±200Vdc ■ Daylight-readable LED display with automatic
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DMU-30DCV
200mVdc,
20Vdc,
200Vdc
NEMA-4/IP65
85-264Vac
110-300Vdc
200mV
30DCV
999VDC
TB1 160
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design
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UF9640
UF9640
QW-R502-484
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low
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UF9640
UF9640
O-220
QW-R502-484
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low
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UF9640
UF9640
QW-R502-484
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Untitled
Abstract: No abstract text available
Text: SSG9980 4.6A, 80V,RDS ON 52mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 45 The SSG9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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SSG9980
SSG9980
27Typ.
980SS
Maxim980
01-Jun-2002
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Untitled
Abstract: No abstract text available
Text: Ruggedized Zone Enclosure, Preterminated, ALTOS Cable 48 F, 4x12 OptiTip Adapters, Pulling Grip, MM OM3 , 500 ft 223.0125 Corning Cable Systems AnyLAN Ruggedized Zone Enclosure combines the AnyLAN OptiTip™ adapter with a sealed closure for quick and easy deployment, eliminating the need for field-terminated fiber optic cables. The
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RZE56671248TW4500F
RZE56671248TW4500F
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Untitled
Abstract: No abstract text available
Text: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
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SSG4953
SSG4953
27Typ.
01-Jun-2006
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Untitled
Abstract: No abstract text available
Text: EMC/EMI Chokes RB series Current-compensated Chokes Rated currents from 16 to 50A Up to 600VAC or 1000VDC Approvals 2- and 3-wire configurations Horizontal and vertical PCB mounting types Ruggedized saturation and thermal behavior Open construction for forced and
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600VAC
1000VDC
C/230V
Mil-HB-217F)
400Hz
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SSF2102
Abstract: MosFET
Text: SSF2102 2.1A , 20V , RDS ON 60 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-323 The SSF2102 provide the designer with the best combination of fast switching, ruggedized device design, low
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SSF2102
OT-323
SSF2102
OT-323
14-Jan-2014
MosFET
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Untitled
Abstract: No abstract text available
Text: SSD12P10 -12A , -100V , RDS ON 210mΩ P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
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SSD12P10
-100V
O-252
SSD12P10
12P10
300us,
16-Nov-2012
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT9564 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET 1 DESCRIPTION TO-252 The UTC UT9564 is a P-ch enhancement mode power MOSFET and it uses UTC perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and
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UT9564
O-252
UT9564
UT9564L-TN3-R
UT9564G-TN3-R
UT9564L-S08-R
UT9564G-S08-R
UT9564L-S08-T
UT9564G-S08-T
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Untitled
Abstract: No abstract text available
Text: S1C1 Pin Diode Switch Single Pole, Single Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S1K2 Pin Diode Switch Single Pole, Single Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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s3v5
Abstract: No abstract text available
Text: S3V5 Pin Diode Switch Single Pole, Three Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. •
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Untitled
Abstract: No abstract text available
Text: S2U6 Pin Diode Switch Single Pole, Two Throw Absorptive Features: • Incorporated TTL-compatible driver for convenient system integration and operates from +5 V and -15 V DC power supplies. • DC blocks at all RF ports. • Ruggedized construction. • RoHS-compliant versions available.
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Untitled
Abstract: No abstract text available
Text: SBP 9961 INTERRUPT CONTROLLER 1.0 INTRODUCTION 1.1 G E N E R A L D E SC R IP T IO N SBP 9961 T h e S B P 9961 C o n tro lle r is a ruggedized, m on olithic, program m able, m u ltifu n ction system support device fabricated w ith oxide separated Integrated In jection Lo gic l2 L technology. T h e S B P 9961 provides the S B P 9 9 0 0 series Fa m ily
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40-PIN
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SBP 9900
Abstract: SBP9989
Text: SBP 9960 SBP9960 PR O G R A M M A B LE CRU I/O EXPANDER 1.0 INTRODUCTION 1.1 GENERAL DESCRIPTION The SBP 9960 Programmable CRU I/O Expander is a ruggedized m onolithic software-configurable input/output device fabricated w ith oxide separated Integrated Injection Logic |2 l technology. The
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SBP9960
//77/7X
28-PIN
SBP 9900
SBP9989
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Untitled
Abstract: No abstract text available
Text: HV04H HV06H tn C . 64-Channel Serial To Parallel Converter With Ruggedized High Voltage CMOS Outputs Ordering Information Package Options Device Recommended Operating Vpp Max 80-Lead Quad Cerpak Guliwing 80-Lead Quad Plastic Guliwing 60V HV04H06DG 80V HV04H08DG
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64-Channel
HV04H
80-Lead
HV04H06DG
HV04H08DG
HV06H06DG
HV06H08DG
HV04H06PG
HV04H08PG
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Delay Lines
Abstract: shuttle
Text: Technitrol Surface-Mount Delay Lines IÇ* 's Technitrol has responded to the rapidly growing applications for surface-mount delay lines, particularly in military and ruggedized applica tions, with the broadest high-reliability line in the industry. We're confi
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kyx 28
Abstract: 74148 9900A 9900 Panel SBP9900A-1 DEC memory catalogue IC2 Bus Addresses 007C ic 74148 INJECTOR
Text: SBP 9900A-1 1. INTRODUCTION 1.1 D E S C R IP T IO N Th e SBP 9 9 0 0 A microprocessor is a ruggedized m ono lith ic C entral Processing U n it <CPU fabricated w ith Integrated In jection Logic |2|_ ) technology. Th e SBP 9 9 0 0 A combines th e properties o f l 2 L technology w ith a 16-b it word
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900A-1
16-bit
13-ft
kyx 28
74148
9900A
9900 Panel
SBP9900A-1
DEC memory catalogue
IC2 Bus Addresses
007C
ic 74148
INJECTOR
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dc 20v motor matsua
Abstract: mosfet Gate Drive dc 20v motor matsushita AN8175 panasonic igbt and power mosfet driver
Text: Panasonic Power MOS-FET Gate Drive 1C AN8175/S Overview The AN8175/S is a high voltage,high speed power MOS-FET and IGBT driver with both high side and low side referenced output channels. Proprietary HYIC and latch immune CMOS technologies enable ruggedized
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AN8175/S_
AN8175/S
200/420mA
700ns
D00281AE
dc 20v motor matsua
mosfet Gate Drive
dc 20v motor matsushita
AN8175
panasonic igbt and power mosfet driver
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cold cathode
Abstract: rs tube
Text: RAYTHEON TECHNICAL INFORMATION COLD CATHODE GAS - DIODE TYPE S-jX—C- eJ -L .e—n—c s - CK6763 The CK6763 is a ruggedized, instant starting, cold cathode, g a s-fille d , half-wave rectifier of m in iature construction suitable for high voltage, low current power supplies up to 12 mAdc output.
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CK6763
CK6763
cold cathode
rs tube
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RK 100
Abstract: ELECTRON tube 5639 5639 tube CG24 RK100 subminiature tubes radar tube BACR
Text: 5639 PREM IUM TUBE TUMO-SOL PENTODE SUBMINIATURE TYPE . 400" COATED UN IPOTENTIAL CATHODE MAX. HEATER 6.3 VOLTS 0.45 AMP. AC OR DC T- 3 MAX. ANY MOUNTING POSITION BOTTOM VIEW SU BM INIATURE BUTTON 8 FLEXIBLE LEADS l i MIN. . . ! . GLASS BULB THE 5639 IS A RUGGEDIZED PENTODE IN THE 8 LEAD BUTTON SUBMINIATURE CON
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TUBG-S01
8100MFIELD,
RK 100
ELECTRON
tube 5639
5639 tube
CG24
RK100
subminiature tubes
radar tube
BACR
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magnetron modulator design
Abstract: ML8464 magnetron ns radar magnetron 60 kw ML-8464 ML 1100 dc power radar tube magnetron 65 kw machlett triode
Text: ISSUED 5-64 m vi Ruggedized Shielded Grid Triode Pulse Power to 5 0 0 kw ELEC TR O N TU B E S P E C IA L IS T DESCRIPTION T he M L -8464 is a shielded-grid triode design ed prim arily to operate as a sw itch tube in hard-tube p u lse m odulators for radar and similar applications. In this service it can deliver
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ML-8464
ST-2020
magnetron modulator design
ML8464
magnetron ns radar
magnetron 60 kw
ML 1100 dc power
radar tube
magnetron 65 kw
machlett triode
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