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Abstract: No abstract text available
Text: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
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SSG4953
SSG4953
27Typ.
01-Jun-2006
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4953SS
Abstract: SSG4953 4953S mosfet vgs 5v 5a
Text: SSG4953 -5A, -30V,RDS ON 53mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4953 provide the designer with the best Combination of fast switching,
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SSG4953
SSG4953
27Typ.
23-Jun-2010
4953SS
4953S
mosfet vgs 5v 5a
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SSG4953P
Abstract: MosFET SSG4953
Text: SSG4953P -5.2 A, -30 V, RDS ON 52 m Dual P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on)
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SSG4953P
15-Jan-2011
SSG4953P
MosFET
SSG4953
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4953ss
Abstract: ssg4953
Text: SSG4953 -6 A, -30 V, RDS ON 45 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and
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SSG4953
SSG4953
4953SS
21-Feb-2013
4953ss
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4953A
Abstract: SSG4953 ssg4953a
Text: SSG4953A P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS ON 42 m Elektronische Bauelemente DESCRIPTION The SSG4953A uses high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. The SOP-8 package is universally preferred for all commercial-industrial surface mount
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SSG4953A
SSG4953A
4953ASS
t10sec.
Width300s,
22-Oct-2009
4953A
SSG4953
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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