TLC497
Abstract: SPNU010 TMS370C156 SPNU029 TMS370 TMS370C710 INVERTER 10kW ru 370C050
Text: TMS370 Family Application Board Technical Reference 1993 8-Bit Microcontroller Family Printed in U.S.A., June 1993 2615131-9761 revision * SPNU029 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines Book Type Title Two Lines Title year year
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TMS370
SPNU029
TLC497
SPNU010
TMS370C156
SPNU029
TMS370C710
INVERTER 10kW ru
370C050
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62*256 ram
Abstract: TMS370 P4012 SPNS014 MAX232 isolated intel schematics cdt 1026 SPNU010 SPNU029 370C050
Text: TMS370 Family Application Board Technical Reference 1993 8-Bit Microcontroller Family Printed in U.S.A., June 1993 2615131-9761 revision * SPNU029 Volume # Book Type Two Lines Book Type Volume # Book Type Two Lines Book Type Title Two Lines Title year year
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TMS370
SPNU029
62*256 ram
P4012
SPNS014
MAX232 isolated
intel schematics
cdt 1026
SPNU010
SPNU029
370C050
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RU 250F
Abstract: No abstract text available
Text: Bourns Multifuse Shortform Catalog 2003 Reliable Electronic Solutions Multifuse® Products Bourns® Multifuse® family of Polymer Positive Applications Temperature Coefficient PPTC “resettable fuses” are used in a wide variety of circuit protection applications.
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MF-R/90
MF-R/250
MF-R/600
Resett24117
25M/MF0314
RU 250F
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lm3298
Abstract: LT150A IN4002 LT1004 LT1033 LT1033C LT1033M 15v linear regulator
Text: LT1033 3A. Negative Adjustable Regulator DCSCRIPTIOfl F c n ru R c s • ■ ■ ■ Guaranteed 1% Initial Voltage Tolerance Guaranteed 0.015%/V Line Regulation Guaranteed 0.02%/W Thermal Regulation 100% Burn-in in Thermal Limit nppucmions ■ ■ ■ ■
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LT1033
LT1033
O-220
HOUe-12
LT1033M
U1033C
LT1033C
lm3298
LT150A
IN4002
LT1004
15v linear regulator
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IRFR9120
Abstract: 5CEG
Text: P-CHANNEL POWER MOSFETS IRFR9120/9121 FEATURES • • • • • • • Lower R d s ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFR9120/9121
IRFR91
IRFR9121
IRFR9120
5CEG
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure
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IRF9620/9621
IRF9622
F9621
IRF9620
IRF9621
IRF9623
IRF9620/9621Ã
Q01E57b
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IRF540
Abstract: irfp140
Text: S A MS UN G E L E C T R O N I C S INC b4E ]> • 7^4142 IRF540/541/542/543 IRFP140/141 /142/143 «sriGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 00121b3 TO-220 Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es
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IRF540/541/542/543
IRFP140/141
00121b3
O-220
IRF540/IRFP1
IRFP141
IRFP140/141/142/143
IRF540
IRF540/541
IRF540
irfp140
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IRF510
Abstract: IRF510 MOSFET IRF512 irf510 ir 05b diode
Text: N-CHANNEL POWER MOSFETS IRF510/511/512/513 FEATURES • • • • • • • Lo w er R ds on Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lysilico n g a te cell s tru ctu re Lo w er in p u t c a p a c ita n c e E x te n d e d sa fe o p e ra tin g area
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IRF510/511/512/513
IRF510
IRF512
IRF513
IRF510 MOSFET
irf510 ir
05b diode
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2N5133
Abstract: TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915
Text: NATL SENICOND 6 5 0 1130 NATL {D ISCRETE} SEMICOND, àfl <D I S C R E T E L ' DeT| b S G H S D 00353^ 5 28C 35 3 9 5 o ' S O “ ' w •</) c Ç0 u. eg « Z 3 5 Q . Z ■gu. g 2 - E Ï— H < X « S es = > if o3 I « § £ * >u HI — >U S M in in in -U 1
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tSD113D
hSD113D
2N5133
TIS92
2N4286
cm 45-12
MPS6566 transistor
2N2712
2N3707
2N3827
2N915
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Siemens photodiode visible light
Abstract: RU 250F
Text: SIEMENS CIIPNTSt OPTO 44E SIE M E N S T> â23b3Eb OOOSOflb G H S IE X SFH250 WITH IR FILTER SFH250F PLASTIC FIBER OPTIC PHOTODIODE DETECTOR - T - 41-53 FEATURES Maximum Ratings • 2.3 mm Aperture Holds Standard 1000 Micron Plastic Fiber • No Fiber Stripping Required
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23b3Eb
SFH250
SFH250F
SFH250F)
SFH250)
SFH250
EH4Q01,
250/250F
Siemens photodiode visible light
RU 250F
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Untitled
Abstract: No abstract text available
Text: AD VA N C E D PO WE R T E C H N O L O G Y blE D • Qg5 7 W QDDQfl3S 747 H A V P WWaa d v a n c ed POW ER Te c h n o l o g y QD 2N7227 400 Volt JX2N7227* JV2N7227* O S POWER MOS IV 0.315Q 'QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
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2N7227
JX2N7227*
JV2N7227*
MIL-S-19500/592
O-254AA
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irf640
Abstract: hexfet irf640 power MOSFET IRF640 80 watt
Text: PD-9.374G In tern ation al ü r ] R e c tifie r IRF640 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 2 0 0 V R DS on = 0 .1 8 Q lD = 1 8 A Description
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IRF640
O-220
irf640
hexfet irf640
power MOSFET IRF640 80 watt
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S-8120D
Abstract: No abstract text available
Text: 5V, 300mA REGULATOR with RESET and ENABLE D escription The CS-8120 is a 5V precision linear reg ulator w ith two m icroprocessor com pat ible control functions an d protection cir cuitry included on chip. The com posite N PN -PN P ou tp u t pass transistor
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300mA
CS-8120
150mA)
CS-8120T
CS-812Ã
S-8120T
CS-8120N8
S-8120D
O-200
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2T908A
Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,
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T-0574D.
30Eiaa
Coi03nojiH
2T908A
2T602
2T907A
KT604
1HT251
1T813
2t903
KT920A
PO6 115.05
KT117
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IRFBC20
Abstract: No abstract text available
Text: PD-9.623A International S»] Rectifier IRFBC20 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Vpss = 600V ^DS on - 4 - 4 0 lD= 2.2A Description T h ird G e n e ra tio n H E X F E T s fro m In te rn a tion a l R ectifie r p rovid e th e d e s ig n e r
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IRFBC20
O-220
T0-220
IRFBC20
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4655M52
Abstract: No abstract text available
Text: • International gig Rectifier MA5S452 DG15SD2 TTD « I N R PD-9.756 IRFP264 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements
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MA5S452
DG15SD2
IRFP264
GD155D7
4655M52
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IRFZ14
Abstract: 1A N MOSFET T0-220
Text: PD-9.507B International S Rectifier IRFZ14 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - V R DS on = 0 . 2 0 Q lD = 1 0 A Description
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IRFZ14
T0-220
lfltGIT13tÃ
IRFZ14
1A N MOSFET T0-220
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L528
Abstract: 454d top marking IRC530 IRC530 equivalent
Text: PD-9.454D International S Rectifier IRC530 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V
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IRC530
L528
454d top marking
IRC530
IRC530 equivalent
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IRFL214
Abstract: AN-994
Text: PD-9.862 International B Rectifier IRFL214 HEXFEf Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V ^D S on - 2 . Oí
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IRFL214
OT-223
50Kii
IRFL214
AN-994
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pj 66 diode
Abstract: IRFPC60
Text: PD-9.870 International S Rectifier IRFPC60 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 600V R DS on = O-4 0 ^
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IRFPC60
O-247
T0-220
O-218
pj 66 diode
IRFPC60
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UFN232
Abstract: ufn230
Text: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN230
UFN231
UFN232
UFN233
UFN231
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ha 1452
Abstract: 7401N FJH231A truth table NAND gate 74 FJH231 ft 5777 2 input nor gate 24v Transistor B 1566
Text: FJH23I FJH23IA T.T.L. QUADRUPLE 2-INPUT POSITIVE N A N D GATES Corresponds to 74 Series type 7401N TEN TA TIV E DATA T hese dev ices a re tr a n s is to r - tr a n s is to r logic quadruple 2-input positive NAND g a te s , with a sin g le-en d ed open c o lle cto r output t r a n s is to r , in the F J s e r ie s of in te g rate d
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FJH23I
FJH23IA
7401N
FJH231
7401N.
FJH231-Page
B9801
ha 1452
7401N
FJH231A
truth table NAND gate 74
ft 5777
2 input nor gate 24v
Transistor B 1566
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TTL 74-series IC
Abstract: IC 7493n FJJ14 TTL 7490 7401 ic configuration ic 7490n 7400N 7401N 7402N 7403AN
Text: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 7401N 7401 AN 7402N 7403N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7442N 7450N 7451N 7453N Mullard types Type No. Mullard types FJH131 FJH231 FJH311
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7400N
7401N
7402N
7403N
7403AN
7404N
7405N
7405AN
7420N
7430N
TTL 74-series IC
IC 7493n
FJJ14
TTL 7490
7401 ic configuration
ic 7490n
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Fluke a55
Abstract: No abstract text available
Text: i T u TECHNOLOGY nm wideband RMS-DC Converter Building Block F€ A T U R € S D C S C R IP TIO fl • 300MHz 3dB Bandwidth The LT1088 is a thermally based R M S -D C converter build ■ 1 % Accuracy D C -5 0 M H Z ing block. It converts the input waveform to heat. Using ex
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300MHz
LT1088
14-Lead
Fluke a55
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