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    Minuteman Power Technologies EXR3000RTHV

    UPS AVR 3KVA/2700W 2U RACK/TWR
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    Minuteman Power Technologies EXR3000RTHVNC

    UPS AVR 3KVA/2700W 2U RACK/TWR
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    Minuteman Power Technologies EXR1500RTHV

    UPS AVR 750VA/675W 2U RACK/TWR
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    Minuteman Power Technologies EXR1500RTHVNC

    UPS AVR 750VA/675W 2U RACK/TWR
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    RTHV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE7162

    Abstract: 220nf capacitor
    Text: NTE7162 Integrated Circuit DC−Coupled Vertical Deflection and East−West Output Circuit Description: The NTE7162 is a power circuit in a 13−Lead Staggered SIP type package designed for use in 90° and 110° color deflection systems for field frequencies of 50Hz to 120Hz. The circuit provides a DC


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    PDF NTE7162 NTE7162 13-Lead 120Hz. Note10. 500mV Pin11 220nf capacitor

    syntron rectifier

    Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
    Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES


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    PDF

    BUSBAR calculation

    Abstract: BUSBAR calculation datasheet rogers busbar Ansys led A copper busbar voltage drop i300a busbar design ansys BUSBAR Fz2400
    Text: Thermal Properties of Power Terminals in High Power IGBT Modules A. Cosaert1, M. Beulque1, M. Wölz2, O. Schilling2, H. Sandmann2, R. Spanke2, K. Appelhoff2 1 2 Rogers NV, Gent, Belgium eupec GmbH, Warstein, Germany Abstract Power dissipation in the leads of IGBT modules has to be taken into account for modern inverter design. This is


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    PDF

    schematic inductive proximity sensor

    Abstract: heat sink design guide, IGBT NCDT3300 FP10R06WE3 eddy current measurements chip Micro-Epsilon schematic coil inductive proximity sensor easypim igbt Thermal grease
    Text: The Thermal Heat Sink Interface of IGBT Modules w/o Base Plate A Comprehensive Experimental and Simulation Study P.Kanschat1, Th. Stolze1, D. Kreuzer1, R. Cordes2 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany 2) University of Applied Sciences Südwestfalen, Campus Soest, Dept. Electrical Power Engineering,


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    PDF D-59581 NCDT3300, schematic inductive proximity sensor heat sink design guide, IGBT NCDT3300 FP10R06WE3 eddy current measurements chip Micro-Epsilon schematic coil inductive proximity sensor easypim igbt Thermal grease

    Untitled

    Abstract: No abstract text available
    Text: RS, RH, BCH AND RTH SERIES FIGURE 94 .25 .032 L .25 Dimensions are in inches. Avg. Forward Current Max. IFAVM@55°C mA milliamps 650 650 550 500 500 1500 1500 1250 1250 1250 25 25 25 25 25 25 25 25 25 25 25 100 100 100 100 100 100 100 100 100 100 100 100


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    PDF RSUFH12 RSUFH18 RSUFH24 RSUFH36 RSUFH42 RHV15 RHV20 RHV25 RHV30 RHV35

    BCHV35

    Abstract: RSUFH42 RHV30 BCHV50
    Text: HIGH VOLTAGE AXIAL LEAD RECTIFIER ASSEMBLY – BCH, RH, RS & RTH SERIES FIGURE 6 .25 .032 L .25 Dimensions are in inches. Avg. Forward Current Max. IFAVM@55°C mA milliamps 650 650 550 500 500 1500 1500 1250 1250 1250 25 25 25 25 25 25 25 25 25 25 25 100


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    PDF RSUFH12 RSUFH18 RSUFH24 RSUFH36 RSUFH42 RHV15 RHV20 RHV25 RHV30 RHV35 BCHV35 RSUFH42 RHV30 BCHV50

    4A05 diode

    Abstract: ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG SM3FG 2CL2FP HVW3 diode SM3F
    Text: HIGH VOLTAGE LOW CURRENT RECTIFIERS – NV, G SERIES FIGURE 24 NV•FP Series FIGURE 0.080 Lead Diameter 0.020 0.12 Max. FIGURE 2 G•FS Series G•FG Series 1” Min. FIGURE 4 0.120 Lead Diameter 0.024 1” Min. D Lead Diameter 0.023 1” Min. 3 L Max. G•GE & G•PE Series


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    PDF CT1000V6AA60 CT1000V6AA100 CT1000V6AA120 CT1000V6AA160 CT1000V6AA40 CT1000V6AA80 CT400K6AA120 CT400K6AA100 CT400K6AA80 CT400K6AA40 4A05 diode ct 4a05 4a05 equivalent components of diode her208 diode 4a05 SP5LFG SM3FG 2CL2FP HVW3 diode SM3F

    rthv80

    Abstract: RTHV60 BCHV60 RTHV45 RTHV25 RHV35 rthv20 RHV30 RTHV40 RHV15
    Text: HIGH VOLTAGE AXIAL LEAD RECTIFIER ASSEMBLY – BCH, RH, RS & RTH SERIES FIGURE 6 .25 .032 L .25 Dimensions are in inches. Avg. Forward Current Max. IFAVM@55°C mA milliamps 650 650 550 500 500 1500 1500 1250 1250 1250 25 25 25 25 25 25 25 25 25 25 25 100


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    PDF RSUFH12 RSUFH18 RSUFH24 RSUFH36 RSUFH42 RHV15 RHV20 RHV25 RHV30 RHV35 rthv80 RTHV60 BCHV60 RTHV45 RTHV25 RHV35 rthv20 RHV30 RTHV40 RHV15

    NTE7131

    Abstract: No abstract text available
    Text: NTE7131 Integrated Circuit DC–Coupled Vertical Deflection Circuit Description: The NTE7131 is an integrated circuit in a 9–Lead SIP type package designed for use in 90° and 110° color deflection systems for field frequencies of 50 to 120Hz. The circuit provides a DC driven vertical


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    PDF NTE7131 NTE7131 120Hz.

    OA41

    Abstract: LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER
    Text: VITESSE FX Family Data Sheet High Performance FX Family Gate Arrays Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW


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    PDF MIL-STD-883 G51017-0, OA41 LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER

    NTE7156

    Abstract: No abstract text available
    Text: NTE7156 Integrated Circuit DC–Coupled Vertical Deflection Circuit Description: The NTE7156 is a power circuit in a 9–Lead SIP type package designed for use in 90° and 110° color deflection systems for field frequencies of 50Hz to 120Hz. This device provides a DC driven vertical


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    PDF NTE7156 NTE7156 120Hz. 500mV

    using the NTC inside

    Abstract: EN50187 AN2009-10 transistor NTC 1,0 B25 equivalent ntc temperature measuring circuit schematic transistor modul trigger temperature to resistance of 10k ntc resistor electronic schematic 3433K
    Text: Application Note, V1.0, Nov. 2009 AN2009-10 U s i n g th e N T C i n s i d e a p o w e r electronic module Considerations regarding temperature measurement IMM INP LP Edition 2010-01-13 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2010.


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    PDF AN2009-10 using the NTC inside EN50187 AN2009-10 transistor NTC 1,0 B25 equivalent ntc temperature measuring circuit schematic transistor modul trigger temperature to resistance of 10k ntc resistor electronic schematic 3433K

    zinc

    Abstract: kvar wiring 60831-1 Gas Insulated switchgear VDE 0660 part 500 IEC60831 IEC61921 bubble B25667-series
    Text: Application Notes More Power with PhaseCap P o w e r Q u a l i t y S o l u t i o n s www.epcos.com/pfc Application Notes The collection of “PQS Application Notes” is a library with in-depth information on PFC applications, case studies and reference projects. It also serves as a helpdesk for all


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    PDF IEC60439-1/2/3: D-81617 106/V4 zinc kvar wiring 60831-1 Gas Insulated switchgear VDE 0660 part 500 IEC60831 IEC61921 bubble B25667-series

    abb bov 660

    Abstract: BOD 1-04 Abb breakover diode BOV1000-S dsas16u ABB bod 1-11 dsas 5-0 dsas10u DSAS5U dsas
    Text: A B B SEMI CONDUCTORS AG BOD • Breakover Diodes Version Type Ordering number Bestellnummer Num. de commande BOD 1-04 -05 -06 -07 -08 -09 -10 3 flE P V bo Ibo V V Tvj=25°C Ta =50°C mA A 400 500 600 700 800 900 1000 ± 50 <15 Iavm 1100 1200 1300 1400 1500


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    PDF QDlb63Ã 01b63fl 000D0M2 abb bov 660 BOD 1-04 Abb breakover diode BOV1000-S dsas16u ABB bod 1-11 dsas 5-0 dsas10u DSAS5U dsas

    fisher ca-65

    Abstract: No abstract text available
    Text: SALES REPRESENTATIVES U.S. and Canada " 'S ALABAMA N-Tech Sales 190 Lime Quarry Road, Suite 106M Madison, AL 35758 256-464-0033/Fax: 256-464-9909 ALASKA Doran Sales Associates 134 SE Fifth Street Hillsboro, OR 97123 503-640-4500/888-31 -DORAN Fax: 503-640-4555


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    PDF 256-464-0033/Fax: 501-455-2927/Fax: 1257-B 9408HINGTON 847-577-8200/Fax: 303-460-9600/Fax: fisher ca-65

    thyristor SH100

    Abstract: SH100
    Text: HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE SH100 D,F,G,J,L 21A HIGH SPEED APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage V DRM) ;200 ~ 8 0 0 V Repetitive Peak Reverse Voltage V r RM . Average On-State Current (Max.) . Turn-Off Time


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    PDF SH100 00A//is 00V//is 15/iS SH100D21A SH100F21A SH100G21A SH100J SH100L21A thyristor SH100

    Untitled

    Abstract: No abstract text available
    Text: CS8151 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP D escription The CS8151 is a precision 5V, 100mA m icro-power voltage regulator w ith very low quiescent current 400jiA typical at 200jiA load . The 5V output is accurate w ithin ±2% and supplies


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    PDF CS8151 100mA CS8151 400jiA 200jiA 400inV.

    LT 816

    Abstract: No abstract text available
    Text: r z j S G S -T H O M S O N ^ 7# IlD ÈlKffi&IiETIM M Èi T Y N 0 5 1 6 — > T Y N 8 1 6 SCR FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 0516 —> TYN 816 Family Silicon Con­ trolled Rectifiers are high performance glass passi­


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    PDF 400Hz LT 816

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Audio/Radio Products Laboratory Report Mounting power SIL devices NBA9002 Author: K. v.d. Wolf INTRODUCTION Philips manufactures a wide range of power ICs, with output powers varying from 0.5W to 50W. The various types are designed for


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    PDF NBA9002

    MT42C4064

    Abstract: No abstract text available
    Text: MICRO N T E C H N O L O G Y INC 5SE D • D G 0 5 7 b b Mñb H M R N UiT42C4064 883C 1 Ô4K x 4 VRAM 1 |W |iC = R O S ! MILITARY VRAM 64K x 4 DRAM WITH 256 x 4 SAM PIN ASSIGNMENT (Top View • MIL-STD-883, Class B 24-Pin DIP (D-11) FEATURES • • •


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    PDF UiT42C4064 MIL-STD-883, 24-Pin MIL-STD-883 WT4SC4064 MT42C4064