34-16NO1
Abstract: 40130
Text: Three Phase Rectifier Bridges VRSM V VRRM V Type 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 34-08NO1 VUO 34-12NO1 VUO 34-14NO1 VUO 34-16NO1 VUO 34-18NO1 Symbol Test Conditions IdAV IdAV IdAVM TK = 90°C, module TA = 45°C RthKA = 0.5 K/W , module
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34-08NO1
34-12NO1
34-14NO1
34-16NO1
34-18NO1
34-16NO1
40130
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T80-T
Abstract: No abstract text available
Text: VUO 16 Three Phase Rectifier Bridge VRSM/DSM V 900 1300 1500 1700 1900 VRRM/DRM V 800 1200 1400 1600 1800 VUO 16-08NO1 VUO 16-12NO1 VUO 16-14NO1 VUO 16-16NO1 VUO 16-18NO1 Conditions IdAV IdAV IdAVM TC = 90°C, module TA = 45°C RthKA = 0.5 K/W , module module
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16-08NO1
16-12NO1
16-14NO1
16-16NO1
16-18NO1
00-1800V
20100503a
T80-T
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Q2225
Abstract: No abstract text available
Text: Three Phase Rectifier Bridges VRSM V VRRM V Type 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 22-08NO1 VUO 22-12NO1 VUO 22-14NO1 VUO 22-16NO1 VUO 22-18NO1 Symbol Test Conditions IdAV IdAV IdAVM TK = 90°C, module TA = 45°C RthKA = 0.5 K/W , module
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22-08NO1
22-12NO1
22-14NO1
22-16NO1
22-18NO1
Q2225
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din IEC 747
Abstract: ixys vuo 52
Text: Three Phase Rectifier Bridges VRSM V VRRM V Type 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 52-08NO1 VUO 52-12NO1 VUO 52-14NO1 VUO 52-16NO1 VUO 52-18NO1 Symbol Test Conditions IdAV IdAV IdAVM TK = 90°C, module TA = 45°C RthKA = 0.5 K/W , module
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52-08NO1
52-12NO1
52-14NO1
52-16NO1
52-18NO1
din IEC 747
ixys vuo 52
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16-08NO1
Abstract: 1800VRRM
Text: Three Phase Rectifier Bridges VRSM V VRRM V Type 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 16-08NO1 VUO 16-12NO1 VUO 16-14NO1 VUO 16-16NO1 VUO 16-18NO1 Symbol Test Conditions IdAV IdAV IdAVM TK = 90°C, module TA = 45°C RthKA = 0.5 K/W , module
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16-08NO1
16-12NO1
16-14NO1
16-16NO1
16-18NO1
16-08NO1
1800VRRM
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Untitled
Abstract: No abstract text available
Text: VUO 34 Three Phase Rectifier Bridge VRSM/DSM V 900 1300 1500 1700 1900 VRRM/DRM V 800 1200 1400 1600 1800 VUO 34-08NO1 VUO 34-12NO1 VUO 34-14NO1 VUO 34-16NO1 VUO 34-18NO1 Conditions IdAV IdAV IdAVM TC = 90°C, module TA = 45°C RthKA = 0.5 K/W , module module
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34-08NO1
34-12NO1
34-14NO1
34-16NO1
34-18NO1
00-1800V
20100503a
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22-16N
Abstract: No abstract text available
Text: VUO 22 Three Phase Rectifier Bridge VRSM/DSM V 900 1300 1500 1700 1900 VRRM/DRM V 800 1200 1400 1600 1800 VUO 22-08NO1 VUO 22-12NO1 VUO 22-14NO1 VUO 22-16NO1 VUO 22-18NO1 Conditions IdAV IdAV IdAVM TC = 90°C, module TA = 45°C RthKA = 0.5 K/W , module module
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22-08NO1
22-12NO1
22-14NO1
22-16NO1
22-18NO1
00-1800V
20100503a
22-16N
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mcc 550 ixys
Abstract: IXYS MCC 550 igd 001 MCC 550 thyristor 106 17012i
Text: MCC 170 ITRMS = 2x 350 A ITAVM = 2x 203 A VRRM = 1200-1800 V Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 3 Type 6 7 1 5 4 2 3 2 MCC MCC MCC MCC 170-12io1 170-14io1 170-16io1 170-18io1 Symbol Test Conditions
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170-12io1
170-14io1
170-16io1
170-18io1
mcc 550 ixys
IXYS MCC 550
igd 001
MCC 550
thyristor 106
17012i
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MDD25
Abstract: 255-16N1 MDD255 ixys MCC 700
Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol
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2x450
2x270
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
10Transient
20100203a
MDD25
255-16N1
MDD255
ixys MCC 700
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ixys cs 45-16 io1r
Abstract: CS 110 thyristor
Text: CS 45 Phase Control Thyristor VRRM = 800-1600 V 75 A IT RMS = IT(AV)M = 48 A VRSM VRRM VDSM VDRM V V Type 900 800 CS 45-08 io1 1300 1200 CS 45-12 io1 1700 1600 CS 45-16 io1 CS 45-16 io1R A C TO-247 AD ISOPLUS247TM Version io1 Version io1R C A G G h A (TAB)
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00-1600V
O-247
ISOPLUS247TM
20100203a
ixys cs 45-16 io1r
CS 110 thyristor
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E72873
Abstract: No abstract text available
Text: MDO 600-16N1 High Power Diode Modules VRSM V 1700 VRRM V 1600 IFRMS = IFAVM = VRRM = 3 Type 955 A 608 A 1600 V 3 2 2 MDO 600-16N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 85°C; 180° sine IFSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 955 608 A
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600-16N1
E72873
20100203a
E72873
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T1125
Abstract: No abstract text available
Text: MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Test Conditions
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500-12N1
500-14N1
500-16N1
500-18N1
500-20N1
500-22N1
T1125
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Untitled
Abstract: No abstract text available
Text: VVZB 135-16IOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 135 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A
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135-16IOXT
VVZB135-16IOXT
E72873
20110907b
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2x520
Abstract: No abstract text available
Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions
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312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
2x520
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fuo22
Abstract: No abstract text available
Text: FUO22-12N 3~ Rectifier Standard Rectifier VRRM = 1200 V I DAV = 30 A I FSM = 150 A 3~ Rectifier Bridge Part number FUO22-12N Backside: isolated 2 5 4 3 1 Features / Advantages: Applications: Package: i4-Pac ● Package with DCB ceramic ● Reduced weight ● Improved temperature and power cycling
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FUO22-12N
60747and
20130215b
fuo22
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DNA30EM2200PC
Abstract: DNA30E2200PC
Text: DNA30EM2200PC High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30EM2200PC Backside: anode 1 3 2 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current
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DNA30EM2200PC
O-263
60747and
20130123b
DNA30EM2200PC
DNA30E2200PC
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marking code 2hv
Abstract: DNA30E2200IY DNA30E2200PC DNA30E2200PZ DNA30EM2200PC
Text: DNA30E2200PC High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PC Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current
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DNA30E2200PC
O-263
DNA30E2200PZ
60747and
20130123d
DNA30E]
marking code 2hv
DNA30E2200IY
DNA30E2200PC
DNA30E2200PZ
DNA30EM2200PC
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Untitled
Abstract: No abstract text available
Text: MCD72-18io1B Thyristor Module VRRM = 2x 1800 V I TAV = 85 A VT = 1.34 V Phase leg Part number MCD72-18io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD72-18io1B
O-240AA
60747and
20130605a
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Untitled
Abstract: No abstract text available
Text: MCD72-08io1B Thyristor Module VRRM = 2x 800 V I TAV = 85 A VT = 1.34 V Phase leg Part number MCD72-08io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD72-08io1B
O-240AA
60747and
20130605a
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Untitled
Abstract: No abstract text available
Text: MCD132-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCD132-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD132-18io1
60747and
20131121a
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Untitled
Abstract: No abstract text available
Text: MCD56-16io1B Thyristor Module VRRM = 2x 1600 V I TAV = 60 A VT = 1.24 V Phase leg Part number MCD56-16io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD56-16io1B
O-240AA
60747and
20130605a
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Untitled
Abstract: No abstract text available
Text: MCC132-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCC132-08io1
60747and
20131121a
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Untitled
Abstract: No abstract text available
Text: MCC162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCC162-08io1
cycling080
60747and
20131121a
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Untitled
Abstract: No abstract text available
Text: MCD95-08io1B Thyristor Module VRRM = 2x 800 V I TAV = 116 A VT = 1.28 V Phase leg Part number MCD95-08io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD95-08io1B
O-240AA
60747and
20130605b
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