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    RT6010 Search Results

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    RT6010 Price and Stock

    Riedon BRT60-10RJ8

    RES CHAS MNT 10 OHM 5% 60W
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    DigiKey BRT60-10RJ8 Bulk 50
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    Riedon BRT60-100RJ8

    RES CHAS MNT 100 OHM 5% 60W
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    DigiKey BRT60-100RJ8 Bulk 50
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    OMRON Corporation RT6-0107021

    - Bulk (Alt: RT6-0107021)
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    Avnet Americas RT6-0107021 Bulk 1
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    OMRON Corporation RT6-0109021

    - Bulk (Alt: RT6-0109021)
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    OMRON Corporation RT6-0109001

    - Bulk (Alt: RT6-0109001)
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    Avnet Americas RT6-0109001 Bulk 1
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    RT6010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RT6010

    Abstract: 10uF 450v tv CAPACITOR sp-D132 RT6010GS
    Text: RT6010 Dual Channel High Efficiency and High Accuracy Average Current Control LED Backlight Buck Controller General Description Features The RT6010 is a dual channel high accuracy average current control LED backlight buck controller for 2 LED strings w/


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    PDF RT6010 RT6010 DS6010-00 10uF 450v tv CAPACITOR sp-D132 RT6010GS

    rt6010

    Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
    Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


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    PDF MDS140L MDS140L rt6010 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B 25-mils J345 1030 PULSED 32uS MODE-S

    transistor GaN

    Abstract: No abstract text available
    Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching


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    PDF MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-01000X transistor GaN

    N48 transistor

    Abstract: No abstract text available
    Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


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    PDF MDS140L MDS140L N48 transistor

    Untitled

    Abstract: No abstract text available
    Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The


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    PDF MDS140L MDS140L

    rt6010

    Abstract: J555
    Text: 3134-100R1 3134-100 100 Watts, 36 Volts, 100µs, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 3134-100 is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 100µõ


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    PDF 3134-100R1 55KS-1 rt6010 J555