siemens rs 1002
Abstract: siemens RS 1001 L siemens rs 1003 YD 1102 siemens rs 1007 yl 1042 siemens SRL 353 yl 1110 RS1002A tt 2074
Text: Equivalent Transmitter Tubes Type BY 1161 C 1108 Siemens type RS 826 RS 1007 Type SRL 353 SRS 456 Siemens type (RS 1001 L) RS 1002 A C 1112 C 1136 CQS 50-1 CQS 200-3 CQS 200-3 CQS 400-1 CQS 600-1 CV 2130 CV 2131 CV 3879 CV 1172 E 125 A E 250 A Q 160-1 Q 400-1
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SIEMENS RS 2064 CL
Abstract: 211 power Triode RF TV TRANSMITTER SIEMENS RS 2012 cl 860 tetrode 211 triode RS1054 RS 2024 cl SIEMENS RS 2052 2052 cv
Text: Selection Tables The following tables are intended to facilitate selection of the appropriate tubes for the modes of operation listed below. The tubes are, of course, also suitable for other applications than those given below. In this case we recommend to use the data sheets or to contact the manufacturer for further information.
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PTB Ex 80 1092
Abstract: No abstract text available
Text: Level measurement Magnetic float switch For horizontal installation Model HLS WIKA data sheet LM 30.02 Applications •■ Level measurement for almost all liquid media ■■ Pump and level control ■■ Chemical, petrochemical, natural gas, offshore, shipbuilding, machine building, power generating
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ADXL330
Abstract: pedometer AN900 ADXL330* accelerometer ADXL322 ADXL323 AN-602 ADXL322 equivalent AN602 newmax
Text: AN-900 ᆌᆩԴऻ One Technology Way t P.O. Box 9106 t Norwood, MA 02062-9106, U.S.A. t Tel: 781.329.4700 t Fax: 781.461.3113 t www.analog.com ཚࡗे߲ڇऺ܈ሺഽऺօഗڦႠీ ፕኁǖJim Scarlett ᆯᇀαঙࢅθঙ၎ڪLjᅺܸኤօྺፌؽٷ࿋ᅎڦԠ
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AN-900
AN-602
ADuC7020
ADXL322
ADuC7020
ADXL330
pedometer
AN900
ADXL330* accelerometer
ADXL322
ADXL323
AN-602
ADXL322 equivalent
AN602
newmax
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CY7C1336
Abstract: CY7C1336-66AC
Text: fax id: 1092 CYPRESS PRELIMINARY CY7C1336 64K X 32 Synchronous 3.3V Cache RAM Functional Description Features • S u p p o rts 6 6 -M H z m icro p ro c ess o r ca ch e sy ste m s w ith zero w ait states • 64K by 32 co m m on I/O • Low S ta n d b y Pow er 1.65 mW, L ve rs io n
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66-MHz
100-pin
CY7C1336
CY7C1336
CY7C1336-66AC
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738 1414
Abstract: No abstract text available
Text: CMOS DOT MATRIX HIGH DUTY LCD DRIVER • CMOS 100-bit Common Driver • High Voltage Resistant Output • CMOS High Voltage Resistant Process • DESCRIPTION The SED1631 is a 100 output dot matrix LCD common row driver for driving a high-capacity LCD panel at
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100-bit
SED1631
SED1631,
SED1600
SED1601
SED1620
525mm
025mm
738 1414
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83401B
Abstract: No abstract text available
Text: TYPE KOA RKL THICK FILM SIP RESISTOR LOW PROFILE NETWORK 2.50 0.0098 L n r ix \ 1.27 0.05 max. 0.25 ± 0.10 0.010 ± 0.004 No. o f Pins P 3 Body Length (L max.) 12 2.56 x P + 2.54 RATING ( H h c rs K circ uii RESISTANCE RANGE \ l OO L* IH K L’ ! • U ()( ï| j| >ni
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KOASS011
83401B
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Untitled
Abstract: No abstract text available
Text: 10 T S A O M T A T 7 TSPuSA •SA ifY 'S lIIA ft 5 i* A Y frg'i'Y<MS3*§'g'YU 0 i tYW SYnttiUofllf 4 * 1 i± A ■ THERE IS NO IN FLUENCE IN THE PRODUCT PERFORMANCE THOUGH THE BLACK AND WHITE SPOT ETC. MIGHT BE CONFIRMED TO THE PLASTIC PART OF THIS PRODUCT AND THE SHADE
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5031T9-*
EN-02DA
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Untitled
Abstract: No abstract text available
Text: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V
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HFA30TA60C
D-6380
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s1854
Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Text: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #
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2SC3560/1
2SC3497
2SC3626
2SC3562
2SC2552
2SC2553
2SC3625
2SC2555
2SC3306
2SK693#
s1854
toshiba f5d
BRIDGE RECTIFIER TOSHIBA 3B
F0R3D
S6565G
BRIDGE RECTIFIER TOSHIBA 3b 4
f0r3b
4G4B44
1D4B42
3529A
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Untitled
Abstract: No abstract text available
Text: International [k?r Rectifier 4 A 5 -5 4 5 2 HEXFET Power MOSFET INTERNATIONAL • • • • • • O G lS b lQ 'ìS f l H I N R PD-9.580B IRFPF40 RECTIFIER bSE » Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching
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IRFPF40
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Untitled
Abstract: No abstract text available
Text: PD-9.1209 International J3R R ectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm
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IRFI740GLC
D-6380
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A17a smd
Abstract: No abstract text available
Text: PD-9.1090 International j i g R ectifier_ IR L 6 4 0 S HEXFET Power MOSFET • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive • RDS on S pecified at V g s =4V & 5V
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SMD-220
SMD-220
D-6380
A17a smd
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Untitled
Abstract: No abstract text available
Text: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2
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IRFI744G
O-220
D-8360
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IRL640
Abstract: IRF1010 IRL640A 91089
Text: PD-9.1089 International H ü Rectifier IRL640 HEXFET Power M O SFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching Ease of Paralleling Simple Drive Requirements
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IRL640
O-220
T0-220
200Vas
I0B83)
D-6380
IRL640
IRF1010
IRL640A
91089
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6AU6
Abstract: 6AU6 tube data 12AU6 6au6a 6au6 tube 6AU6 triode TUBE 6au6 6AU6 -TYPE 3AU6 6au6-a
Text: 6AU6-A 3AU6 12AU6 6AU6-A - 3AU6 - 1 2AU6 ET-T916A PENTODE Page 1 4-6 0 TUBES =DESCRIPTION AND RATING = The 6 A U 6 -A is a miniature sharp-cutoff pentode prim arily designed for use as a high-gain radio-frequency or intermediate-frequency amplifier. Its low grid-plate capacitance and high transconductance make it especially suited
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-12AU6
12AU6
12AU6
k-5561I-TD
6AU6
6AU6 tube data
6au6a
6au6 tube
6AU6 triode
TUBE 6au6
6AU6 -TYPE
3AU6
6au6-a
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BUT14
Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Text: MOTOROLA SC XSTRS/R F la E D | 33t3755 M OOflMaM1! fa | MOTOROLA S E M IC O N D U C T O R BUT14 TECHNICAL DATA 25 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 850 VOLTS
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33t3755M
BUT14
BUT14
SAF 1092
2sc 3402 transistor
HN 554 transistor
100-C
3399 transistor
motorola darlington power transistor
TRANSISTOR 2SC 635
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1RF350
Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
Text: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n
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IRF350
IRF351
IRF352
JRF350,
1RF350,
1RF352
IRF350,
JRF351
1RF350
Transistor IRF 044
IRF3503
TRANSISTOR 2SC 635
08/bup 3110 transistor
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FPLA839
Abstract: TIFPLA840C IC-222 ic T M 2313
Text: 14 x 32 x TIFPLA839M, TIFPLA839C TIFPLA840M, TIFPLA840C 6 FIELD PROGRAMMABLE LOGIC ARRAYS JUNE 1984—REVISED DECEMBER 1987 • Input-to-Output Propagation Delay . . . 10 ns Typical • 24-Pin, 300-m il Slim Line Packages • Power Dissipation . . . 6 5 0 m W Typical
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24-Pin,
300-m
TIFPLA839M,
TIFPLA839C
TIFPLA840M,
TIFPLA840C
1984--REVISED
TIFPLA840M
TIFPLA839C,
FPLA839
IC-222
ic T M 2313
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Untitled
Abstract: No abstract text available
Text: TSW—209-09—S-S—RJ arrifec TSW-108—05—S-Q TSW-116-11—G-S I'i i. Mates vith: SSW. 5 SQ. ESW. ESQ. BCS. E 5W. IDSD. IDSS. CES, S _W TYPE STRIP NO. PINS PER ROW PIN CENTERS 11 Precision Drawn Terminal Strips H " I ^ f k i i i _ S ta n d a rd I O V V “ S trip
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TSW-116-11--
TSW-108--
m1-1502
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Untitled
Abstract: No abstract text available
Text: PD-9.1211 International Rectifier IRFIBC40GLC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 3 0 V V g s Rating Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Repetitive Avalanche Rated
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IRFIBC40GLC
D-6380
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MN8090
Abstract: SM15 CSP-5 mX464 VSS13 5V15V
Text: PANASONIC INDL/ELEK -CIO 693285^2 P A N A S O N I C *75 DETJbiaaflSa D D D t b m 4 | ~ I NDLt E L E C T R O N I C D 72C 0 6 6 9 4 . T-41-55 MN8090 M N8 09 0 1024 t*'y h MOS <1 - 7 -f * - i > - b Self-Scanning 1024-Bit MOS Linear Image Sensors ^ ® M N 8090Ü ,
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T-41-55
mn8090
1024-Bit
MN8090Ã
MN8090
28jum
28//mX464
100ns
SM15
CSP-5
mX464
VSS13
5V15V
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ua776
Abstract: UA776CH
Text: • r z T Ä 7=15=1237 0023^=1 S ■ " P ^ - O 0 !_ S G S -T H O M S O N 7 # M ^ o m i(O T (ô M S U A 7 7 6 S G S-THOMSON 3GE D PROGRAMMABLE SINGLE OP-AMPs ■ M ICRO PO W ER OPERATION ■ NO FREQ UENC Y COM PENSATION REQUIRED ■ W IDE PROGRAMMING RANGE
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UA776
QD23bMD
GQ23b41
UA776
UA776CH
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MPSU 60 transistor
Abstract: MPSU10 MPSU10 equivalent MPS-U10 MPSU 55 transistor mpsu 10 equivalent transistor mps-u High voltage amplifier transistor
Text: MPS-UIO SILICON NPN SILICO N HIGH V O L T A G E A M P L IF IE R T R A N SIS T O R NPN SILIC O N A N N U L A R T R A N SIS T O R . . . designed for high-voltage video and luminance output stages in T V receivers. • High Collector Emitter Breakdown Voltage —
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