RR10A12101
Abstract: No abstract text available
Text: ►Download PDF file Model 型號 : ROSITION ROUTE SWITCHES -RR10A12101-* Features: • Hard tumbler switch in common use • Have dustproof functions Applications: • FA machine, measuring instrument, various kinds of electronic equipment , such as air
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--------RR10A12101-*
RR25P/RR25A/RR30P
RR22P
RR10A
RR10A12101
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150M
Abstract: No abstract text available
Text: ►Download PDF file Model 型號 : ROSITION ROUTE SWITCHES -RR10A12101-* Features: • Hard tumbler switch in common use • Have dustproof functions Applications: • FA machine, measuring instrument, various kinds of electronic equipment , such as air
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--------RR10A12101-*
RR25P/RR25A/RR30P
RR22P
RR10A
150M
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RR10A12101
Abstract: 150M RR10a DC100V
Text: ►下載PDF文檔 Model 型號 : 波段開關-RR10A12101-* 特點: • 通用的堅型旋轉開關 • 具有防塵功能 作用: • FA機，測量儀器，空調機，電子樂器，音響開關等各種電子設備 Dimensions(規格圖): COMMON SPECIFICATIONS(共通規格）:
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--------RR10A12101-*
RR25P/RR25A/RR30P
RR22P
RR10A
RR10A12101
150M
RR10a
DC100V
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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da53
Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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PD488385
da53
uPD488385FB-C60-53-BF1
uPD488385FB-C80-40-BF1
uPD488385FB-C80-45-BF1
uPD488385FB-C80-50-BF1
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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AT91SAM9G20-EK Evaluation Board User Guide
Abstract: AT91SAM9G20-CU dm9161aep board 6413C AT91SAM9G20-EK 8d26 DM9161A 8D-13 CR1225 R105
Text: AT91SAM9G20-EK Evaluation Board . User Guide 6413C–ATARM–18-Feb-09 1-2 6413C–ATARM–18-Feb-09 AT91SAM9G20-EK Evaluation Board User Guide
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AT91SAM9G20-EK
6413C
18-Feb-09
AT91SAM9G20-EK Evaluation Board User Guide
AT91SAM9G20-CU
dm9161aep board
8d26
DM9161A
8D-13
CR1225
R105
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HYB25M144180C-653
Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
Text: Direct RDRAM 128/144-MBit 256Kx16/18×32s Overview The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
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128/144-MBit
128/144-Mbit
TEST77
TEST78
HYB25M144180C-653
HYB25R128160C-653
HYB25R128160C-745
HYB25R128160C-840
HYB25R128160C-845
HYB25R144180C-653
HYB25R144180C-745
HYB25R144180C-840
HYB25R144180C-845
Direct rdram
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diode t29
Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
M01E0107
diode t29
EDR2518ABSE
EDR2518ABSE-8C-E
T45 to DB9
EDR2518ABSE-8C
EDR2518ABSE-AD
EDR2518ABSE-AE
EDR2518ABSE-AE-E
EDR2518ABSE-AEP
EDR2518ABSE-AEP-E
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da53
Abstract: DB26 BE1210 DB62 ROP10
Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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256/288-Mbit
512Kx16/18x32s)
256/288-Mbit
600MHz
800MHz
DL0060
DL0060
da53
DB26
BE1210
DB62
ROP10
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da53
Abstract: DB26 DL010
Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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256/288-Mbit
1Mx16/18x16d)
256/288-Mbit
600MHz
800MHz
DL0105
DL0105
da53
DB26
DL010
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150M
Abstract: No abstract text available
Text: ►Download PDF file Model 型號 : ROSITION ROUTE SWITCHES-RR22P11501 Features: • Hard tumbler switch in common use • Have dustproof functions Applications: • FA machine, measuring instrument, various kinds of electronic equipment , such as air
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SWITCHES--------RR22P11501
RR25P/RR25A/RR30P
RR22P
RR10A
100V11501
150M
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da48
Abstract: uPD488448FB-C60-53-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2 DA63 DB33 circuit diagram
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM EO Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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PD488448
128M-bit
da48
uPD488448FB-C60-53-DQ1
uPD488448FF-C60-53-DQ1
uPD488448FF-C60-53-DQ2
uPD488448FF-C71-45-DQ1
uPD488448FF-C71-45-DQ2
uPD488448FF-C80-45-DQ1
uPD488448FF-C80-45-DQ2
DA63
DB33 circuit diagram
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da53
Abstract: DB26 KM416RD8AC KM418RD8AC
Text: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
da53
DB26
KM418RD8AC
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. P 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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PD488448
128M-bit
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RR3 rf receiver
Abstract: DB26 D-B54 DL005 D-A54
Text: TARGET KM416RD4C/KM418RD4C Direct RDRAM Overview The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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KM416RD4C/KM418RD4C
64/72-Mbit
600Mbps
800Mbps
RR3 rf receiver
DB26
D-B54
DL005
D-A54
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TC59RM716GB
Abstract: 9T20T
Text: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications
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TC59RM716GB-8
128-M
800-M
TEST77
TEST78
P-BGA54-1312-1
TC59RM716GB
9T20T
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ibm rdram
Abstract: No abstract text available
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses
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128Mb
300MHz
400MHz
-60Fj
ibm rdram
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DA30F
Abstract: TFR 600M
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses
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128Mb
300MHz
400MHz
DA30F
TFR 600M
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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PD488448,
JUPD488448
128M-bit
PD488488
144M-bit
14072EJ1V0D
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON Z8530 SERIAL COMMUNICATIONS CONTROLLER Thank you for your interest in the SCC, one of the most versatile and most popular Serial Data Com munications ICs. This document is intended to pro vide answers to all technical questions about the Z8530 Serial Communications Controller. Please
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Z8530
Z8530
PDIP-40
CDIP-40
PLCC44
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marking wr6
Abstract: No abstract text available
Text: U s e r 's M a n u a l ^ S iL G E C hapter 5 R e g is t e r D e s c r ip t io n s 5.1 INTRODUCTION This section describes the function of the various bits in the registers of the device. Throughout this section the follow ing conventions will be used: Control bits may be written and read by the CPU and will
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DD37127
marking wr6
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marking 0229
Abstract: iess 308 DF006302 Z85C30 003A MARKING 64 CERAMIC LEADLESS CHIP CARRIER LCC PIN DIAGRAM OF 80286 WR1 marking code 53C80 80C286
Text: Cl Advanced Micro Devices Z85C30 Enhanced Serial Communications Controller DISTINCTIVE CHARACTERISTICS F astest da ta rate o f any Z8530 — 8.192 M H z / 2.048 Mb/s — 10 M H z / 2.5 Mb/s — 12.5 M H z / 3 Mb/s — 16.384 MHz / 4.096 Mb/s — 20 MHz / 5 Mb/s prelim
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Z85C30
Z8530
Z8530s
Z8530H
85C30
marking 0229
iess 308
DF006302
Z85C30
003A MARKING
64 CERAMIC LEADLESS CHIP CARRIER LCC
PIN DIAGRAM OF 80286
WR1 marking code
53C80
80C286
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