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    RQK1001GQDQS

    Abstract: RQK1001GQDQSTL-E RQK-10
    Text: RQK1001GQDQS Silicon N Channel MOS FET Power Switching REJ03G1729-0100 Rev.1.00 Aug 19, 2008 Features • Medium drain to source voltage and Low gate drive VDSS : 100 V and 4 V gate drive • Low drive current • High speed switching • Small traditional package UPAK


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    PDF RQK1001GQDQS REJ03G1729-0100 PLZZ0004CA-A RQK1001GQDQS RQK1001GQDQSTL-E RQK-10