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    RQ TRANSISTOR Search Results

    RQ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RQ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAX1471 RELIABILITY REPORT FOR MAX1471ATJ+ PLASTIC ENCAPSULATED DEVICES April 27, 2010 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by 'RQ/LSSV Quality Assurance 0DQDJHr, Reliability Engineering Maxim Integrated Products. All rights reserved.


    Original     		PDF MAX1471 MAX1471ATJ+ MAX1471 /-250mA. 96hrs. C/150

    Untitled

    Abstract: No abstract text available
    Text: i, LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA970 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Low Noise :NF = 3dB(Typ.) RQ


    Original     		PDF 2SA970

    FSQ0565RQWDTU

    Abstract: q0565R samwha electrolytic capacitor samwha electrolytic capacitor 10v fsq0765r RCD snubber forward converter 250v 1000uf samwha samwha ELECTROLYTIC capacitor spec 10v 1000uf samwha fuse 2a 250v
    Text: FSQ0565RS/RQ Green-Mode Fairchild Power Switch FPS for Quasi-Resonant Operation - Low EMI and High Efficiency Features Description ! Optimized for Quasi-Resonant Converters (QRC) A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a


    Original     		PDF FSQ0565RS/RQ FSQ0565RS/RQ FSQ0565RQWDTU q0565R samwha electrolytic capacitor samwha electrolytic capacitor 10v fsq0765r RCD snubber forward converter 250v 1000uf samwha samwha ELECTROLYTIC capacitor spec 10v 1000uf samwha fuse 2a 250v

    10v 1000uf samwha

    Abstract: samwha 1000uf 25V samwha electrolytic capacitor ntc 5d-9 Samwha obsolete series samyoung Capacitor 220 F 20 450 V 100uF capacitor samwha samwha ELECTROLYTIC capacitor spec samwha capacitor FB FSQ0565RQWDTU
    Text: FSQ0565RS/RQ Green-Mode Fairchild Power Switch FPS for Quasi-Resonant Operation - Low EMI and High Efficiency Features Description ! Optimized for Quasi-Resonant Converters (QRC) A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a


    Original     		PDF FSQ0565RS/RQ 10v 1000uf samwha samwha 1000uf 25V samwha electrolytic capacitor ntc 5d-9 Samwha obsolete series samyoung Capacitor 220 F 20 450 V 100uF capacitor samwha samwha ELECTROLYTIC capacitor spec samwha capacitor FB FSQ0565RQWDTU

    Untitled

    Abstract: No abstract text available
    Text: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    CE1F3P

    Abstract: D1617
    Text: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for


    Original     		PDF cycle50 CE1F3P D1617

    Untitled

    Abstract: No abstract text available
    Text: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Samwha Electrolytic capacitor 47uf 400v

    Abstract: samwha 1000uF 25V q0565r FSQ0765 samwha 1000uf electrolytic capacitors vishay IN4007 1000uf samwha TO220F-6 250v 1000uf samwha Samwha obsolete series
    Text: FSQ0565RS/RQ Green-Mode Fairchild Power Switch FPS for Quasi-Resonant Operation - Low EMI and High Efficiency Features Description ! Optimized for Quasi-Resonant Converters (QRC) A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a


    Original     		PDF FSQ0565RS/RQ Samwha Electrolytic capacitor 47uf 400v samwha 1000uF 25V q0565r FSQ0765 samwha 1000uf electrolytic capacitors vishay IN4007 1000uf samwha TO220F-6 250v 1000uf samwha Samwha obsolete series

    q0565r

    Abstract: samwha 1000uf 25V samwha 2200uf capacitor FSQ0565RQWDTU 10v 1000uf samwha samwha electrolytic capacitor samwha capacitor samwha electrolytic capacitor 10v samwha 1000uf electrolytic capacitors samwha capacitor part numbers
    Text: FSQ0565RS/RQ Green-Mode Fairchild Power Switch FPS for Quasi-Resonant Operation - Low EMI and High Efficiency Features Description ! Optimized for Quasi-Resonant Converters (QRC) A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a


    Original     		PDF FSQ0565RS/RQ FSQ0565RS/RQ q0565r samwha 1000uf 25V samwha 2200uf capacitor FSQ0565RQWDTU 10v 1000uf samwha samwha electrolytic capacitor samwha capacitor samwha electrolytic capacitor 10v samwha 1000uf electrolytic capacitors samwha capacitor part numbers

    marking MOW

    Abstract: No abstract text available
    Text: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package


    OCR Scan     		PDF SSM6N04FU marking MOW

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K04FS TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FS HIGH SPEED SWITCH APPLICATIONS Unit in mm With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive : V^h = 0.7—1.3 V Low Gate Threshold Voltage Small Package


    OCR Scan     		PDF SSM3K04FS

    SSM3K04FE

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K04FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FE HIGH SPEED SWITCH APPLICATIONS • Unit in mm With Built-in Gate-SoureeResistor : Rq § = 1 M il Typ. 1.6 ± 0.1 0.85 ± 0.1 • 2.5 V Gate Drive • Low Gate Threshold Voltage


    OCR Scan     		PDF SSM3K04FE SSM3K04FE

    2SK358

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK358 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENOID DRIVE APPLICATIONS. 10.3MAX. 03.6±aZ W{ FEATURES : . Low Drain-Source ON Resistance : Rq s (ON)=0 •^ ^ (Typ.)


    OCR Scan     		PDF 2SK358 100nA 2SK358

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K04FU HIGH SPEED SWITCH APPLICATIONS U n it in mm 2.1 ± 0.1 With Built-in Gate-Source Resistor : Rq § = 1 MO Typ. 1.25 ±0.1 2.5 V Gate Drive Low Gate Threshold Voltage E t


    OCR Scan     		PDF SSM3K04FU SC-70

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values


    OCR Scan     		PDF O-220 C67078-A1309-A3 B23SL BUZ80A 235bGS

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A SSM3K04FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE <;<;M3Kn¿LFF HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Source Resistor : Rq § = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7—1.3 V Small Package


    OCR Scan     		PDF SSM3K04FE

    SSM3K04FS

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K04FS TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K04FS HIGH SPEED SWITCH APPLICATIONS Unit in mm • With Built-in Gate-Source Resistor : Rq § = 1 M il Typ. • 2.5 V Gate Drive • Low Gate Threshold Voltage • Small Package


    OCR Scan     		PDF SSM3K04FS SSM3K04FS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel Enhancement 2N7002LT1 3drain Motorola Preferred Device m 2 SOURCE M AXIM U M RATINGS 2 Rating Symbol Value D rain-Source Voltage VDSS 60 Vdc Drain-G ate Voltage Rq s = 1 -0 MS} VDGR 60 Vdc


    OCR Scan     		PDF 2N7002LT1

    SSM6N04FU

    Abstract: No abstract text available
    Text: TO SH IBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS • • • • With Built-in Gate-Source Resistor : Rq § = 1 M il Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V


    OCR Scan     		PDF SSM6N04FU SSM6N04FU

    SSM3K04FU

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K04FU TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS • With Built-in Gate-SoureeResistor :Rq § = 1 M il • 2.5 V Gate Drive • Low Gate Threshold Voltage • Small Package 2.1 ± 0.1


    OCR Scan     		PDF SSM3K04FU SC-70 SSM3K04FU

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2


    OCR Scan     		PDF O-220 C67078-A1307-A4

    J334 transistor

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.)


    OCR Scan     		PDF 2SJ334 V10ms 747//H J334 transistor

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE

    2SK209

    Abstract: 2SK209 rank O
    Text: TOSHIBA 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK209 Unit in mm AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS High |Yfc| : |Yfs| = 15mS Typ. at V DS = 10V, V GS = 0 High Breakdown Voltage : V(2Dg=—50V Low Noise : NF = l.OdB (Typ.) at VDg = 10V, ID = 0.5mA, f=lkH z, RQ = lk n


    OCR Scan     		PDF 2SK209 O-236 SC-59 30k50kl00k 2SK209 2SK209 rank O