diode rm10A
Abstract: RM10A RO Series RM10 RM10B RM10Z 10zrm
Text: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. RM 10Z RM 10 RM 10A RM 10B RM 2Z RM 2 RM 2A RM 2B RM 2C RO 2Z RO 2 RO 2A RO 2B RO 2C Tj (°C) IFSM (A) VRM (V) I F (AV) (A) 200 400 600 800 200 400 600 800
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UL94V-0
diode rm10A
RM10A
RO Series
RM10
RM10B
RM10Z
10zrm
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Untitled
Abstract: No abstract text available
Text: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter Type No. RM 10Z RM 10 RM 10A RM 10B RM 2Z RM 2 RM 2A RM 2B RM 2C RO 2Z RO 2 RO 2A RO 2B RO 2C IFSM （A） VRM （V） I F（ AV） （A） 200 400 600 800 200 400
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Ta100
UL94V0
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Untitled
Abstract: No abstract text available
Text: L6711 3 Phase controller with dynamic VID and selectable DACs Features • 2A integrated gate drivers ■ Fully differential current reading across inductor or LS MOSFET s t c u d ) ro s Description P ( t c e t u e d l o o r s P b e O t e l ) o s ( s t
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L6711
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RM3C
Abstract: EM1C
Text: Rectifier Diodes 4-1 4-1-1 Part No. 1 Chip Part No. EM 1Y VRM IF IFSM V (A) (A) Fig. No. Package 45 Axial(E1) 4 3.0 200 Axial(R4) 8 0.9 30 Surface mount (SFP) 1 AM01Z 35 Axial(A0) 2 SFPM-62 45 Surface mount (SFP) 1 45 Axial(E0) 3 45 Axial(E1) 4 50 Axial(R1)
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SFPM-52
AM01Z
SFPM-62
EM01Z
SFPM-54
SFPM-64
SFPM-74
AM01A
EM01A
RM3C
EM1C
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IXLD02SI
Abstract: IXLD02 lem la 55 p Directed Energy LEM LTA
Text: IXLD02SI Differential 2A Ultra Fast Laser Diode Driver Features General Description • • • • • • • The IXLD02 is an ultra high-speed differential laser diode driver. The IXLD02 is designed specifically to drive single junction laser diodes in a differential fashion. A Q output and
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IXLD02SI
IXLD02
17MHz
600ps
IXLD02SI
lem la 55 p
Directed Energy
LEM LTA
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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Untitled
Abstract: No abstract text available
Text: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM
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SFPM-52
SFPM-62
SFPM-54
SFPM-64
SZ-10)
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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O-220F
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
UX-F5B
UX-F5B diode
RG-2A Diode
shv-30j
FMQ2FU
axial package
fmp2fur
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Diode erb84-009
Abstract: marking code 214 ERB84-009 erb84
Text: ERB84-009 2A Outline Drawing SCHOTTKY BARRIER DIODE • Features • Lo w V f Color code : Blue • Super high speed switching ✓ • High reliability by planer design - A b rid g e d ty p e name n M - O S U> * V o lta g e class ■ Applications s ¥ ro Y
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ERB84-009
500ns,
Diode erb84-009
marking code 214
ERB84-009
erb84
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f3055l
Abstract: 3055LE fd3055l f3055 3055L FP3055LE fd3055le
Text: m HARRIS U S E M I C O N D U C T O R U RFD3055LE, RFD3055LESM, 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC TO-220AB 1 2A , 60V DS ON : 0 .1 50S2 • 2 kV ESD P ro te c te d
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RFD3055LE,
RFD3055LESM,
O-220AB
06e-3
22e-7)
20e-5)
56e-3
f3055l
3055LE
fd3055l
f3055
3055L
FP3055LE
fd3055le
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DS26LS32
Abstract: DS26LS32CM DS26LS32CN DS26LS33 DS26LS33A RS-423
Text: + I” June 1998 N a t i o n a l cd ro S e m i c o n d u c t o r & 33 I- DS26LS32C/DS26LS32M/DS26LS32AC/DS26LS33C/ DS26LS33M/DS26LS33AC Quad Differential Line Receivers General Description Features The D S26LS32 and D S 26 L S 3 2A a re quad differential line re
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DS26LS32C/DS26LS32M/DS26LS32AC/DS26LS33C/
DS26LS33M/DS26LS33AC
DS26LS32
DS26LS32Aare
RS-422,
RS-423
DS26LS32A
DS26LS33
DS26LS33A
DS26LS32CM
DS26LS32CN
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RCA scr package N TO-8
Abstract: rca 2N4102 IGNITION WITH SCR rca scr SCR 100A scr 2n6396 S20620 2n3528 2N4102 ignition tci
Text: SC R Product Matrix TO-i TO-66 TO 66 With Heat Rad. ¡'3SSSL. Jw a ip | f RC A SCR's 'T RM S • t SM (60 Hz) v DROM v RROM N D 2A 60A 15 25 30 50 100 150 200 250 300 400 500 600 700 750 800 4.5A 200A 5A 60A F ro * 5A 80A FTO ' 5A 80A S2400A S2400B 2N 3228
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75AdPMl
S2400A
S3704A
S3714A
2N3528
S2400B
2N3228
S3700B
S3704B
S2710B
RCA scr package N TO-8
rca 2N4102
IGNITION WITH SCR
rca scr
SCR 100A
scr 2n6396
S20620
2N4102
ignition tci
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Untitled
Abstract: No abstract text available
Text: JV\JYXAJV\ 19-0263: Rev 1; 7/95 12V or Adjustable, High-Efficiency, Low IQ , Step-Up DC DC C ontroller The M A X 1771 s te p -u p s w itc h in g c o n tro lle r p ro v id e s 90% efficie n cy over a 30m A to 2A load. A unique cu r re n t-lim ite d p u ls e -fre q u e n c y -m o d u la tio n PFM co n tro l
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CMPZ5240/
MMBZ5240BL
300mA,
DD141bfl
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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fmlg12
Abstract: RB40 N
Text: 3SE D SANKEN ELECTRIC CO LTD Rectifier Diodes i. 7^07m 0DGG7*ì3 fl tm S A K J ~ fiO i-*0\ EVrm:* 0~ 1500V EIo:0.5~ 3.0A S F P M /A M /E M /R M /R O A b s o lu te M a x im u m R a tin g s R a tin g / Vrm V) lo (A) Ifsm (A) Tj CC) Tstg CC) 50Hz Half Sine
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SFPM-52
SFPM-54
SFPM-62
SFPM-64
AM01Z
AM01A
EM01Z
EM01A
RB601
RB602
fmlg12
RB40 N
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TD62M3701F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT • ■ v ■ mp MULTI CHIP ■ a ■ LOW SATURATION VOLTAGE DRIVER FOR MOTOR TD62M3701F is Multi Chip IC incorporates 6 low saturation discrete transistors which equipped bias resistor and fly-wheel diode.
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TD62M3701F
TD62M3701F
SSOP16
RN6006)
RN5006)
MFP-16
SSOP16-P-225-1
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rd0z
Abstract: No abstract text available
Text: GTR MODULE Q SILICON NPN TRIPLE DIFFUSED TYPE IV lU l / Ü ü O L L U Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode.
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MG75G6EL9
rd0z
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transistor t2a surface mount
Abstract: A506 ed1b a506 diode STTA506B a506b
Text: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTA506B(-TR) TURBOSWITCH " A " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.5V V f (max) tr r (typ) PRELIMINARY DATASHEET 20 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:
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STTA506B
transistor t2a surface mount
A506
ed1b
a506 diode
a506b
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TD62M4600F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M4600F 4CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M4600F is Multi Chip 1C incorporates 4 low saturation discrete transistors which equipped Flywheeling Diodes and Bias resistor.
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TD62M4600F
TD62M4600F
10kfl
RN6006)
SSOP16-P-225-1
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet OM6417SP6 OM6419SP6 OM6418SP6 OM642QSP6 POWER MOSFETS AND DIODE IN 11-PIN INDUSTRIAL SIP PACKAGE Full “ H” Bridge With Blocking And Free Wheeling Diodes, 50 To 500 Volts FEATURES • • • • • Ultra Low RDS on Fast Switching
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OM6417SP6
OM6419SP6
OM6418SP6
OM642QSP6
11-PIN
6420SP6
D001107
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO 3^E D b3b?BSS 00Û3132 2 MOT? Order this data sheet by AAFOC/D MOTOROLA T - H 1 - V C 3 S E M IC O N D U C T O R e z z z TECHNICAL DATA A C T -A lig n Fiber O p tic C o m p o n e n ts Receptacle C o u n te d Fiber O p tic T ran sm itter and Receiver
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C7616Â
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TD62M3704F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP T nmmr f i 7 M 3 7a f l A F • ■ w ■ «■r' ■ ■ LOW SATURATION VOLTAGE H-BRIDGE DRIVER FOR MOTOR TD62M3704F is Multi Chip 1C incorporates 5 low saturation discrete transistors w hich equipped flyw heeling diodes and bias resistor.
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TD62M3704F
TD62M3704F
2SA1357
RN5006-Fly-wheeling
RN6006-Flv-wheeling
2SA1314
2SC3420
SSOP16
--------------------------------2M3704F
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vvvf motor
Abstract: No abstract text available
Text: T R A N S IS T O R M O D U L E QCAt00AA120 UL!E76102 M is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated
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QCAt00AA120
E76102
QCA100AA120
CA100AA120
vvvf motor
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A348
Abstract: ERB83-006 jv marking a349
Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass
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ERB83-006
A348
jv marking
a349
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