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    Toshiba America Electronic Components RN1441ATE85LF

    TRANS PREBIAS NPN 20V 0.3A SMINI
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    RN1441 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN1441 Toshiba Japanese - Transistors Original PDF
    RN1441 Toshiba NPN Transistor Original PDF
    RN1441 Toshiba Silicon NPN Epitaxial Type (PCT Process) Transistor Original PDF
    RN1441 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    RN1441A Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441-A Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441A(TE85L) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441A(TE85L2) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441ATE85LF Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN S-MINI Original PDF
    RN1441A(TE85R) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441A(TE85R2) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441B Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441-B Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441B(TE85L) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441B(TE85L2) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441B(TE85R) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441B(TE85R2) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441(TE85L) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441(TE85L2) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1441(TE85R) Toshiba RN1441 - TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF

    RN1441 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441 RN1444 RN1442 RN1443 O-236MOD SC-59 RN1443 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441, RN1442, RN1443, RN1444 Muting and Switching Applications Unit: mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441â RN1444 RN1441, RN1442, RN1443, O-236MOD SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Unit in mm Muting and Switching Applications High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441â RN1444 RN1441 RN1442 RN1443 O-236MOD SC-59 PDF

    RN1441

    Abstract: RN1442 RN1443 RN1444
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 RN1444 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441 RN1444 RN1442 RN1443 O-236MOD SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 PDF

    RN1441

    Abstract: RN1442 RN1443 RN1444 961001EAA2
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications Unit in mm High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 961001EAA2' RN1444 961001EAA2 PDF

    RN1441

    Abstract: RN1442 RN1443 RN1444
    Text: RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1441,RN1442,RN1443,RN1444 Muting and Switching Applications Unit in mm z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)


    Original     		RN1441RN1444 RN1441 RN1442 RN1443 RN1444 O-236MOD SC-59 RN1444 PDF

    RN1441

    Abstract: RN1442 RN1443 RN1444
    Text: RN1441～RN1444 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1441,RN1442,RN1443,RN1444 ○ ミューティング用 ○ スイッチング用 単位: mm z エミッタ・ベース間電圧が大きい。


    Original     		RN1441RN1444 RN1441 RN1442 RN1443 RN1444 236MOD RN1441 RN1442 RN1443 RN1444 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A RN1441 ~RN1444 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN 1443, RN1444 Unit in mm MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage : V e b o = 25V (Min.) High Reverse hpg : Reverse hFE = 150 (Typ.) (V C E = —2V, IC = —4mA)


    OCR Scan     		RN1441 RN1444 RN1441, RN1442, O-236MOD SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: R N 1 4 R N 1 4 4 4 1 3 , , 1 1 4 4 4 2 4 4 RN1441 M U TING A N D SWITCHING APPLICATIONS High Emitter-Base Voltage : Vjebo = 25V (Min.) High Reverse hpg : Reverse hFE = 150 (Typ.) (VCE=—2V, l ç = - 4mA) Low On Resistance : R on = (Typ.) (Iß = 5mA) With Built-in Bias Resistors


    OCR Scan     		RN1441) RN1441 RN1442 RN1443 RN1444 RN1441 RN1444 PDF

    RN1444-A

    Abstract: RN1441 RN1442 RN1443 RN1444
    Text: TO SH IB A RN 1441 ~ RN 1444 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN1443, RN1444 U nit in mm MUTING AN D SW ITCHING APPLICATION S • High Emitter-Base • High Reverse h p g Voltage :V e b o = 25V + 0.5 2.5 - 0 . 3


    OCR Scan     		RN1441 RN1444 RN1441, RN1442, RN1443, RN1444 RN1444-A RN1441 RN1442 RN1443 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    Marking XA XB XC XD XE XF XH XI XJ XK XM

    Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
    Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107


    OCR Scan     		RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    1441-RN

    Abstract: k 1441 1444 G n1444 1444
    Text: TOSHIBA RN 1441 ~ RN 1444 TOSHIBA TRANSISTOR RN1AA1 m m u g • m ■ w ■ SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1AA7 RN1AA3 m m g m m g uRN1AAA m u -m u m m m u m u -m u ■ « ■ w ■ v MUTING AND SWITCHING APPLICATIONS High Emitter-Base Voltage


    OCR Scan     		RN1441 RN1442 RN1443 RN1444 RN1441 1441-RN RN1443 k 1441 1444 G n1444 1444 PDF

    bo 200

    Abstract: TO-236MOD
    Text: SILICON NPN EPITAXIAL T Y P E RM ^ ^ ~RN 1^ j 1 Unit in mm M UTING A N D SWITCHING APPLICATIONS + 0.5 2 5 - 0 .3 • High Emitter-Base Voltage :V gjjo= 25V Min. • High Reverse hyg : Reverse hFE = 150 (Typ.) (VCE=—2V, Ic= -4m A ) • Low On Resistance :RON= 1^ (Typ.) (lB = 5mA)


    OCR Scan     		O-236MOD SC-59 RN1442 RN1443 RN1444 RN1441 bo 200 TO-236MOD PDF

    RN2226

    Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
    Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package


    OCR Scan     		2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015 PDF