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    Toshiba America Electronic Components RN1310,LXHF

    TRANS PREBIAS NPN 50V 0.1A SC70
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    DigiKey RN1310,LXHF Reel 6,000 3,000
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    RN1310,LXHF Cut Tape 1
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    Avnet Americas RN1310,LXHF Reel 36 Weeks 3,000
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    Mouser Electronics RN1310,LXHF 8,890
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    TTI RN1310,LXHF Reel 3,000
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    Toshiba America Electronic Components RN1310(TE85L,F)

    TRANS PREBIAS NPN 50V 0.1A SC70
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    Verical RN1310(TE85L,F) 2,964 1,429
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    Quest Components RN1310(TE85L,F) 2,371
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    Toshiba America Electronic Components RN1310,LF

    TRANS PREBIAS NPN 50V 0.1A SC70
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    DigiKey RN1310,LF Cut Tape 230 1
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    Mouser Electronics RN1310,LF
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    RN1310 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RN1310 Toshiba Japanese - Transistors Original PDF
    RN1310 Toshiba Silicon NPN Epitaxial Type (PCT Process) Transistor Original PDF
    RN1310 Toshiba NPN Transistor Original PDF
    RN1310 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    RN1310 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    RN1310,LF Toshiba America Electronic Components TRANS PREBIAS NPN 50V 0.1A USM Original PDF
    RN1310(TE85L) Toshiba RN1310 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1310(TE85L2) Toshiba RN1310 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN1310(TE85L,F) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANSISTOR NPN USM Original PDF
    RN1310(TE85R) Toshiba RN1310 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal Original PDF

    RN1310 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design


    Original     		PDF RN1310 RN1311 RN2310 RN2311

    RN1310

    Abstract: RN1311 RN2310 RN2311
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1310 RN1311 RN2310, RN2311 SC-70 RN1311 RN2310 RN2311

    Untitled

    Abstract: No abstract text available
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1310 RN1311 RN2310, RN2311 SC-70

    Untitled

    Abstract: No abstract text available
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1310, RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design


    Original     		PDF RN1310 RN1311 RN1310, RN2310 RN2311 SC-70

    RN1310

    Abstract: RN1311 RN2310 RN2311
    Text: RN1310,RN1311 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1310,RN1311 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original     		PDF RN1310 RN1311 RN2310RN2311 RN1310 RN1311 RN2310 RN2311

    RN1310

    Abstract: RN1311 RN2310 RN2311
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1310,RN1311 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1310 RN1311 RN2310, RN2311 SC-70 961001EAA1' RN1311 RN2310 RN2311

    RN1310

    Abstract: RN1311 RN2310 RN2311
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1310 RN1311 RN2310, RN2311 SC-70 RN1311 RN2310 RN2311

    Untitled

    Abstract: No abstract text available
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1310 RN1311 RN2310, RN2311 SC-70

    RN1310

    Abstract: RN1311 RN2310 RN2311
    Text: RN1310,RN1311 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1310,RN1311 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original     		PDF RN1310 RN1311 RN2310RN2311 RN1310 RN1311 RN2310 RN2311

    Untitled

    Abstract: No abstract text available
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original     		PDF RN1310 RN1311 RN2310, RN2311 SC-70 RN1310

    RN2311

    Abstract: RN1310 RN1311 RN2310
    Text: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design


    Original     		PDF RN1310 RN1311 RN2310 RN2311 SC-70lled RN2311 RN1311

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    12VDC sf 249

    Abstract: 230 97o Osram LED SMD 5630 diodo 2B
    Text: 2013 Catalogo VLM 2013 VLM Catalogue 2013 since 1945 570 www.vlm.it since 1945 Indice Index Indicazioni Generali General warnings 575 Simboli e definizioni Symbols and definitions 577 Tipi, classi, gradi di protezione Types, classes, degrees of protection


    Original     		PDF VG/71P VG/73P VL-5081-65-B VL-5081-65-BV VL-5081-85-B VL-5081-85-BV 12VDC sf 249 230 97o Osram LED SMD 5630 diodo 2B

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    Toshiba xm

    Abstract: No abstract text available
    Text: TOSHIBA RN1310,RN1311 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1310, RN1311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan     		PDF RN1310 RN1311 RN1310, RN2310, RN2311 Toshiba xm

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN1310,RN1311 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1310, RN1311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan     		PDF RN1310 RN1311 RN1310, RN2310, RN2311 ELEC50

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE RN1310.RN1311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design • R e d u c e a Q u a n t i t y of P a r t s an d M a n u f a c t u r i n g P r o c e s s


    OCR Scan     		PDF RN1310 RN1311 RN2311 RN1311 RN1310T RN1310

    Untitled

    Abstract: No abstract text available
    Text: RN2310,2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2.1 • With Built-In Bias Resistors ±0.1 1.2S±0.1 • Simplify Circuit Design o -fI -EE • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1310, RN1311


    OCR Scan     		PDF RN2310 RN1310, RN1311 SC-70 RN2310 RN23H

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Marking XA XB XC XD XE XF XH XI XJ XK XM

    Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
    Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107


    OCR Scan     		PDF RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE SWITCHING, INVERTER CIRCUIT, RN2310, RN2311 INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm .± 2 1 0.1 • With Built-in Bias Resistors 1.25Ì0.1 • Simplify Circuit Design -E3 • Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan     		PDF RN2310, RN2311 RN1310, RN1311 RN2310