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    VENKEL LTD HPTF0805-RN-1132FT

    High Power Thin Film CR;0805;1/8W;�10PPM;11.3K;�1%
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    RN1132F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN1132F Toshiba Transistor Silicon NPN Epitaxial Type (PCT Process) Original PDF
    RN1132FT Toshiba Transistor Silicon NPN Epitaxial Type (PCT Process) Original PDF
    RN1132FV Toshiba Silicon NPN Epitaxial Transistor with Resistor Original PDF

    RN1132F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RN1131FT

    Abstract: RN1132FT RN2131FT RN2132FT
    Text: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication.


    Original     		RN1131FT RN1132FT RN2131FT, RN2132FT 0022g RN1132FT RN2131FT RN2132FT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		RN1131F RN1132F RN2131F, RN2132F PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication.


    Original     		RN1131FT RN1132FT RN2131FT, RN2132FT PDF

    RN2132FV

    Abstract: RN1131FV RN1132FV RN2131FV
    Text: RN1131FV,RN1132FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FV,RN1132FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.4 Complementary to RN2131FV,RN2132FV 0.8±0.05 1 0.4 1.2±0.05


    Original     		RN1131FV RN1132FV RN2131FV RN2132FV RN2132FV RN1132FV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1131FV,RN1132FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FV,RN1132FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.4 Complementary to RN2131FV,RN2132FV 0.8±0.05 1 0.4 1.2±0.05


    Original     		RN1131FV RN1132FV RN2131FV RN2132FV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		RN1131F RN1132F RN2131F, RN2132F PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z Extra small package(TESM) is applicable for extra high density fabrication.


    Original     		RN1131FT RN1132FT RN2131FT, RN2132FT PDF

    RN1131F

    Abstract: RN1132F RN2131F RN2132F
    Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		RN1131F RN1132F RN2131F, RN2132F RN1132F RN2131F RN2132F PDF

    RN1131F

    Abstract: RN1132F RN2131F RN2132F
    Text: RN2131F,RN2132F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2131F,RN2132F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original     		RN2131F RN2132F RN1131F RN1132F RN1132F RN2132F PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV PDF

    RN2131F

    Abstract: RN1131F RN1132F RN2132F
    Text: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		RN2131F RN2132F RN1131F, RN1132F RN1131F RN1132F RN2132F PDF

    RN1131F

    Abstract: RN1132F RN2131F RN2132F
    Text: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		RN2131F RN2132F RN1131F, RN1132F 0023mg RN1131F RN1132F RN2132F PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    RN2132FT

    Abstract: RN1131FT RN1132FT RN2131FT
    Text: RN2131FT,RN2132FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FT,RN2132FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication.


    Original     		RN2131FT RN2132FT RN1131FT, RN1132FT RN2132FT RN1131FT RN1132FT PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2131FT,RN2132FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FT,RN2132FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Extra small package(TESM) is applicable for extra high density fabrication.


    Original     		RN2131FT RN2132FT RN1131FT, RN1132FT PDF

    RN2132FV

    Abstract: RN1131FV RN1132FV RN2131FV
    Text: RN2131FV, RN2132FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FV, RN2132FV Unit : mm 0.22±0.05 Built-in bias resistors 1.2±0.05 0.32±0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.8±0.05 0.4


    Original     		RN2131FV, RN2132FV RN1131FV RN1132FV RN2132FV RN1132FV RN2131FV PDF

    Untitled

    Abstract: No abstract text available
    Text: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		RN2131F RN2132F RN1131F, RN1132F PDF

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


    Original     		3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF