RN1131F
Abstract: RN1132F RN2131F RN2132F
Text: RN2131F,RN2132F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2131F,RN2132F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm
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RN2131F
RN2132F
RN1131F
RN1132F
RN1132F
RN2132F
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Untitled
Abstract: No abstract text available
Text: RN2131FV,RN2132FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FV,RN2132FV Unit : mm 0.22±0.05 With built-in bias resistors 1.2±0.05 0.32±0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.8±0.05
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RN2131FV
RN2132FV
RN1131FV,
RN1132FV
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RN2131F
Abstract: RN1131F RN1132F RN2132F
Text: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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RN2131F
RN2132F
RN1131F,
RN1132F
RN1131F
RN1132F
RN2132F
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RN1131F
Abstract: RN1132F RN2131F RN2132F
Text: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN2131F
RN2132F
RN1131F,
RN1132F
0023mg
RN1131F
RN1132F
RN2132F
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RN2132FT
Abstract: RN1131FT RN1132FT RN2131FT
Text: RN2131FT,RN2132FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FT,RN2132FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication.
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RN2131FT
RN2132FT
RN1131FT,
RN1132FT
RN2132FT
RN1131FT
RN1132FT
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Untitled
Abstract: No abstract text available
Text: RN2131FT,RN2132FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FT,RN2132FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Extra small package(TESM) is applicable for extra high density fabrication.
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RN2131FT
RN2132FT
RN1131FT,
RN1132FT
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RN2132FV
Abstract: RN1131FV RN1132FV RN2131FV
Text: RN2131FV, RN2132FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131FV, RN2132FV Unit : mm 0.22±0.05 Built-in bias resistors 1.2±0.05 0.32±0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.8±0.05 0.4
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RN2131FV,
RN2132FV
RN1131FV
RN1132FV
RN2132FV
RN1132FV
RN2131FV
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RN2132FV
Abstract: RN1131FV RN1132FV RN2131FV
Text: RN1131FV,RN1132FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FV,RN1132FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit: mm 0.4 Complementary to RN2131FV,RN2132FV 0.8±0.05 1 0.4 1.2±0.05
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RN1131FV
RN1132FV
RN2131FV
RN2132FV
RN2132FV
RN1132FV
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Untitled
Abstract: No abstract text available
Text: RN2131F,RN2132F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2131F,RN2132F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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RN2131F
RN2132F
RN1131F,
RN1132F
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Untitled
Abstract: No abstract text available
Text: RN1131FV,RN1132FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FV,RN1132FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm 0.4 Complementary to RN2131FV,RN2132FV 0.8±0.05 1 0.4 1.2±0.05
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RN1131FV
RN1132FV
RN2131FV
RN2132FV
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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RN1131FT
Abstract: RN1132FT RN2131FT RN2132FT
Text: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication.
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RN1131FT
RN1132FT
RN2131FT,
RN2132FT
0022g
RN1132FT
RN2131FT
RN2132FT
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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toshiba YK smd marking
Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
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050106DAA1
12341D5AD
BDJ0097A
toshiba YK smd marking
bdj0097a
2904 SMD IC
2SC3327
VA MARKING
rn4983
smd marking Yd
XA marking
k 2968 toshiba
RN1106FV
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Untitled
Abstract: No abstract text available
Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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RN1131F
RN1132F
RN2131F,
RN2132F
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Untitled
Abstract: No abstract text available
Text: RN1131FT,RN1132FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131FT,RN1132FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication.
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RN1131FT
RN1132FT
RN2131FT,
RN2132FT
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
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SN431)
SUN0550F/D
O-220AB-3L
O-220F-3L
O-220F-4SL
DIP-14
DIP-20
DIP-18
S78DM12Q
Sf20d400
s78dM12
BA5810
sn7905
SF5A400
transistor AE code PNP smd
sf20a300
SF10A300
SF10D300
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TC7SZ08FU
Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type
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3407C-0209
TC7SZ08FU
lm2804
TC7S14F
sot-24 led
TC7SZ126FU
TC7SZ125FU
SOT-24
te85l F
TC7W04F
2sc2240 equivalent
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GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004O
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
GT45F122
TK13A60U
GT30F123
2SK4207
GT30J124
IGBT GT30F123
gt30f122
GT30G122
2SC5471
IGBT GT30J124
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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Untitled
Abstract: No abstract text available
Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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RN1131F
RN1132F
RN2131F,
RN2132F
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