Untitled
Abstract: No abstract text available
Text: SPI80N08S2-07R OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 75 V R DS on 7.3 m ID 80 A P- TO262 -3-1 Avalanche rated dv/dt rated Integrated gate resistance for easy parallel connection
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Original
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SPI80N08S2-07R
SPI80N08S2-07R
Q67060-S7417
RN0807
BSPI80N08S2-07R,
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PDF
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max5470
Abstract: Q67060-S7417
Text: Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 75 V RDS on 7.3 mΩ ID 80 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 • dv/dt rated •=Integrated gate resistance for easy parallel connection
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Original
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P-TO262-3-1
SPI80N08S2-07R
Q67060-S7417
RN0807
BSPI80N08S2-07R,
SPI80N08S2-07R
max5470
Q67060-S7417
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PDF
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300W buck converter 60V OUTPUT
Abstract: S5830
Text: SPI80N08S2-07R OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 75 V R DS on 7.3 m ID 80 A P- TO262 -3-1 Avalanche rated dv/dt rated Ideal for fast switching buck converter Integrated gate resistance
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Original
|
SPI80N08S2-07R
SPI80N08S2-07R
Q67060-S7417
RN0807
BSPI80N08S2-07R,
300W buck converter 60V OUTPUT
S5830
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PDF
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s7417
Abstract: ANPS071E BSPI80N08S2-07R SPI80N08S2-07R Q67060-S7417
Text: SPI80N08S2-07R OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode R DS on 7.3 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 • dv/dt rated • Integrated gate resistance for easy parallel connection
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Original
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SPI80N08S2-07R
Q67060-S7417
RN0807
BSPI80N08S2-07R,
SPI80N08S2-07R
s7417
ANPS071E
BSPI80N08S2-07R
Q67060-S7417
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PDF
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