SCR 535 A
Abstract: CM521213 CM521613 SD-31 SD-32
Text: CM521213 CM521613 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/Diode POW-R-BLOK Modules 130 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and
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CM521213
CM521613
Amperes/1200-1600
CM521213,
SCR 535 A
CM521213
CM521613
SD-31
SD-32
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THER201
Abstract: THER203 THER204 THER205 THER206 THER208 MARK 206
Text: THER201~THER208 超快恢復整流二極管 Ultra-Fast Recovery Rectifier Diodes •特徵 Features 2.0A ● IF（AV） 50V~1000V ● VRRM ● trr①≤50ns, 70ns High reliability ● 高可靠性 ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm
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THER201
THER208
trr50ns,
THER204~
THER205
THER203
THER204
THER205
THER206
THER208
MARK 206
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irrm1
Abstract: DSAUD0054565.txt TFR201
Text: TFR201~TFR207 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 2.0A ● IF（AV） ● VRRM 50V~1000V ● trr①≤0.15 s，0.25μs，0.5μs ● 高可靠性 High reliability ■用途 ● ■外形尺寸和印記 Outline Dimensions and Mark
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TFR201
TFR207
irrm1
DSAUD0054565.txt
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Untitled
Abstract: No abstract text available
Text: RL201 – RL208 2.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data C
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RL201
RL208
DO-15,
MIL-STD-202,
DO-15
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fotodiode
Abstract: foto transistor Fotodiode array ir SMD Dioden foto fotodiode array DPB 500
Text: iC-OR 5-FACH FOTODIODEN-ARRAY EIGENSCHAFTEN ANWENDUNGEN ♦ Monolitisch integrierte Fotodioden ♦ Hoher Gleichlauf ♦ Hohe Fotoempfindlichkeit im Bereich des sichtbaren Lichts und des nahen Infrarots ♦ Kleiner Dunkelstrom ♦ Diodenfläche 0.95x0.74mm2
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74mm2
74mm2)
fotodiode
foto transistor
Fotodiode array ir
SMD Dioden
foto
fotodiode array
DPB 500
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MIT-5A116-U
Abstract: 406012 551A
Text: SLOTTED PHOTOINTERRUPTER MIT-5A116-U Description Package Dimensions The MIT-5A116-U consists of a Gallium Arsenide 4 1 infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
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MIT-5A116-U
MIT-5A116-U
50TYP
100mA
406012
551A
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FZK 105
Abstract: fzk 101 103 ma wj 62 RZ18B RZ18BR RZ39A RZ47A thomson diodes F147 tl 136
Text: V THOMSON-CSF DIVISION SEMICONDUCTEURS RZ6A — RZ18B •. ZENER DIODES DIODES ZENER P tot = 20 W 50 W silicon Zener diodes : 6 i V < Vz t nom < 180 V • Hermetically sealed metal according to normalization C CT U : F 10 and JE O EC DO-5. • Available with anode to case or cathode to
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RZ18B
RZ18BR
FZK 105
fzk 101
103 ma wj 62
RZ18B
RZ18BR
RZ39A
RZ47A
thomson diodes
F147
tl 136
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ZENER diode TESTING CIRCUIT
Abstract: 1N3154 1N3157A 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
Text: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient αVZ or TC herein for nominal voltages
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tN940B
1N941
1N946B
1N4057
1N4085
ZENER diode TESTING CIRCUIT
1N3154
1N3157A
1N4565
1N4584
1N821
1N829
1N935
1N940B
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201 Zener diode
Abstract: Forward Reference Diode precision reference zener diode 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
Text: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient α VZ or TC herein for nominal voltages
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N940B
1N941
1N946B
1N4057
1N4085
201 Zener diode
Forward Reference Diode
precision reference zener diode
1N4565
1N4584
1N821
1N829
1N935
1N940B
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fgt313
Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156
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2SA1186
2SC4024
2SA1215
2SC4131
2SA1216
2SC4138
100VAC
2SA1294
2SC4140
fgt313
transistor fgt313
SLA4052
RG-2A Diode
SLA5222
fgt412
RBV-3006
FMN-1106S
SLA5096
diode ry2a
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward
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MA3Z793
MA793)
MA3Z792
MA792)
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Metelics MSS20-141
Abstract: MSS20 C15 9 pin mss20.143 142-B10D
Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.
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MSS20
046-C15
047-C15
A17027
Metelics MSS20-141
C15 9 pin
mss20.143
142-B10D
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rl 205 diode
Abstract: MSW2051-205 MSW2050-205 rl diode 205 MSW2050-205-T MSW2051-205-EVAL
Text: Surface Mount PIN Diode SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 158 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)
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MSW2050-205
MSW2051-205
MSW2050-205
MSW2051-205
rl 205 diode
rl diode 205
MSW2050-205-T
MSW2051-205-EVAL
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Untitled
Abstract: No abstract text available
Text: TSL256 HIGHĆSENSITIVITY LIGHTĆTOĆVOLTAGE CONVERTER TAOS014 – JANUARY 2000 D D D D D D D D D PACKAGE FRONT VIEW High Sensitivity Low Noise (500 µVrms Typ) Rail-to-Rail Output High Power-Supply Rejection (>35 dB) Single Voltage Supply Operation Monolithic Silicon IC Containing
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TSL256
TAOS014
TSL256
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Untitled
Abstract: No abstract text available
Text: Surface Mount PIN Diode SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 158 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)
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MSW2050-205
MSW2051-205
MSW2050-205
MSW2051-205
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ERMA 110
Abstract: marking W4 marking W4 N marking l42
Text: 03/11/99 13:58:44 Page Diodes 80&-446-48SB->683800193Z C880193ZZ BightFftX BAT54 I A 1C IS SURFACE MOUNT SCHOTTK BARRIER DIODE Features Low Tum-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 Mechanical Data_
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-446-48SB-
683800193Z
C880193ZZ
BAT54
OT-23
OT-23,
MIL-STD-202,
Vana09-
DS11005
LITES00011
ERMA 110
marking W4
marking W4 N
marking l42
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3 tfk 206
Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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MCT62H
MCT62H
3 tfk 206
tfk Phototransistor
TFK 201
DIN 50014 STANDARD
Vishay Telefunken tfk transistor
tfk order
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MSS20.143-B10D
Abstract: mss20 b10d 050c1 MSS20, 143-B10D MSS-20 mss20,140 mss20,146 mss20.140 mss20.050
Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.
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MSS20
MSS20.143-B10D
b10d
050c1
MSS20, 143-B10D
MSS-20
mss20,140
mss20,146
mss20.140
mss20.050
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Untitled
Abstract: No abstract text available
Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.
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MSS20
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MOC205
Abstract: MOC206 MOC207 MOC208 207 opto soic
Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.
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UTM 218 RESISTOR
Abstract: No abstract text available
Text: TPA0202 STEREO 2-W AUDIO POWER AMPLIFIER SLOS2Q5- FEBRUARY 1998 • Integrated Depop Circuitry • High Power with PC Power Supply - 2 W/Ch at 5 V into a 3-Cl Load - 800 mW/Ch at 3 V MUX • Fully Specified for Use with 3-& Loads • Ultra-Low Distortion - 0.05% THD+N at 2 W and 3 -Q. Load
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TPA0202
24-Pin
UTM 218 RESISTOR
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MARKING 1F
Abstract: 1SV215 C25V toshiba 0,el
Text: 1SV215 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 5 CATV TUNING. Unit in mm • High Capacitance Ratio : C2V / C25V = 10.5 Typ. • Low Series Resistance : rs = 0.60 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV215
470MHz
-X100
MARKING 1F
1SV215
C25V
toshiba 0,el
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MOC205
Abstract: MOC205 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC205 MOC206* MOC207* MOC208* Small Outline Optoisolators [CTR *4 0 -8 0 % ] Transistor Output [CTR =83-125% ] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, In a surface mountable,
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RS481A
MOC205
MOC206
MOC207
MOC208
MOC205 motorola
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MOC205-M
Abstract: MOC206-M MOC207-M MOC208-M MOC207M
Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
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MOC205-M
MOC206-M
MOC207-M
MOC208-M
E90700,
MOC205V-M)
MOC205-M
MOC206-M
MOC207-M
MOC208-M
MOC207M
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