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    RL 205 DIODE Search Results

    RL 205 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    RL 205 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCR 535 A

    Abstract: CM521213 CM521613 SD-31 SD-32
    Text: CM521213 CM521613 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 SCR/Diode POW-R-BLOK Modules 130 Amperes/1200-1600 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and


    Original     		PDF CM521213 CM521613 Amperes/1200-1600 CM521213, SCR 535 A CM521213 CM521613 SD-31 SD-32

    THER201

    Abstract: THER203 THER204 THER205 THER206 THER208 MARK 206
    Text: THER201~THER208 超快恢復整流二極管 Ultra-Fast Recovery Rectifier Diodes •特徵 Features 2.0A ● IF（AV） 50V~1000V ● VRRM ● trr①≤50ns, 70ns High reliability ● 高可靠性 ■外形尺寸和印記 Outline Dimensions and Mark 單位 Unit：mm


    Original     		PDF THER201 THER208 trr50ns, THER204~ THER205 THER203 THER204 THER205 THER206 THER208 MARK 206

    irrm1

    Abstract: DSAUD0054565.txt TFR201
    Text: TFR201~TFR207 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 2.0A ● IF（AV） ● VRRM 50V~1000V ● trr①≤0.15 s，0.25μs，0.5μs ● 高可靠性 High reliability ■用途 ● ■外形尺寸和印記 Outline Dimensions and Mark


    Original     		PDF TFR201 TFR207 irrm1 DSAUD0054565.txt

    Untitled

    Abstract: No abstract text available
    Text: RL201 – RL208 2.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data        C


    Original     		PDF RL201 RL208 DO-15, MIL-STD-202, DO-15

    fotodiode

    Abstract: foto transistor Fotodiode array ir SMD Dioden foto fotodiode array DPB 500
    Text: iC-OR 5-FACH FOTODIODEN-ARRAY EIGENSCHAFTEN ANWENDUNGEN ♦ Monolitisch integrierte Fotodioden ♦ Hoher Gleichlauf ♦ Hohe Fotoempfindlichkeit im Bereich des sichtbaren Lichts und des nahen Infrarots ♦ Kleiner Dunkelstrom ♦ Diodenfläche 0.95x0.74mm2


    Original     		PDF 74mm2 74mm2) fotodiode foto transistor Fotodiode array ir SMD Dioden foto fotodiode array DPB 500

    MIT-5A116-U

    Abstract: 406012 551A
    Text: SLOTTED PHOTOINTERRUPTER MIT-5A116-U Description Package Dimensions The MIT-5A116-U consists of a Gallium Arsenide 4 1 infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.


    Original     		PDF MIT-5A116-U MIT-5A116-U 50TYP 100mA 406012 551A

    ZENER diode TESTING CIRCUIT

    Abstract: 1N3154 1N3157A 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
    Text: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient αVZ or TC herein for nominal voltages


    Original     		PDF tN940B 1N941 1N946B 1N4057 1N4085 ZENER diode TESTING CIRCUIT 1N3154 1N3157A 1N4565 1N4584 1N821 1N829 1N935 1N940B

    201 Zener diode

    Abstract: Forward Reference Diode precision reference zener diode 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
    Text: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient α VZ or TC herein for nominal voltages


    Original     		PDF N940B 1N941 1N946B 1N4057 1N4085 201 Zener diode Forward Reference Diode precision reference zener diode 1N4565 1N4584 1N821 1N829 1N935 1N940B

    fgt313

    Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
    Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156


    Original     		PDF 2SA1186 2SC4024 2SA1215 2SC4131 2SA1216 2SC4138 100VAC 2SA1294 2SC4140 fgt313 transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward


    Original     		PDF MA3Z793 MA793) MA3Z792 MA792)

    Metelics MSS20-141

    Abstract: MSS20 C15 9 pin mss20.143 142-B10D
    Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.


    Original     		PDF MSS20 046-C15 047-C15 A17027 Metelics MSS20-141 C15 9 pin mss20.143 142-B10D

    rl 205 diode

    Abstract: MSW2051-205 MSW2050-205 rl diode 205 MSW2050-205-T MSW2051-205-EVAL
    Text: Surface Mount PIN Diode SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 158 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)


    Original     		PDF MSW2050-205 MSW2051-205 MSW2050-205 MSW2051-205 rl 205 diode rl diode 205 MSW2050-205-T MSW2051-205-EVAL

    Untitled

    Abstract: No abstract text available
    Text: TSL256 HIGHĆSENSITIVITY LIGHTĆTOĆVOLTAGE CONVERTER TAOS014 – JANUARY 2000 D D D D D D D D D PACKAGE FRONT VIEW High Sensitivity Low Noise (500 µVrms Typ) Rail-to-Rail Output High Power-Supply Rejection (>35 dB) Single Voltage Supply Operation Monolithic Silicon IC Containing


    Original     		PDF TSL256 TAOS014 TSL256

    MSW2051-205

    Abstract: MSW2050-205 MSW2050-205-T
    Text: Surface Mount PIN Diode SP2T Switches MSW2050-205 & MSW2051-205 Series Datasheet Features • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H • Higher Average Power Handling than Plastic 158 W C.W. • Higher Voltage > 500 Volts for Higher RF Peak Power (500 W)


    Original     		PDF MSW2050-205 MSW2051-205 MSW2050-205 MSW2050-205-T

    3 tfk 206

    Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
    Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


    Original     		PDF MCT62H MCT62H 3 tfk 206 tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor tfk order

    MSS20.143-B10D

    Abstract: mss20 b10d 050c1 MSS20, 143-B10D MSS-20 mss20,140 mss20,146 mss20.140 mss20.050
    Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.


    Original     		PDF MSS20 MSS20.143-B10D b10d 050c1 MSS20, 143-B10D MSS-20 mss20,140 mss20,146 mss20.140 mss20.050

    Untitled

    Abstract: No abstract text available
    Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.


    Original     		PDF MSS20

    MOC205

    Abstract: MOC206 MOC207 MOC208 207 opto soic
    Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.


    Original     		PDF

    MOC205-M

    Abstract: MOC206-M MOC207-M MOC208-M MOC207M
    Text: SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC205-M MOC206-M MOC207-M MOC208-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic


    Original     		PDF MOC205-M MOC206-M MOC207-M MOC208-M E90700, MOC205V-M) MOC205-M MOC206-M MOC207-M MOC208-M MOC207M

    FZK 105

    Abstract: fzk 101 103 ma wj 62 RZ18B RZ18BR RZ39A RZ47A thomson diodes F147 tl 136
    Text: V THOMSON-CSF DIVISION SEMICONDUCTEURS RZ6A — RZ18B •. ZENER DIODES DIODES ZENER P tot = 20 W 50 W silicon Zener diodes : 6 i V < Vz t nom < 180 V • Hermetically sealed metal according to normalization C CT U : F 10 and JE O EC DO-5. • Available with anode to case or cathode to


    OCR Scan     		PDF RZ18B RZ18BR FZK 105 fzk 101 103 ma wj 62 RZ18B RZ18BR RZ39A RZ47A thomson diodes F147 tl 136

    ERMA 110

    Abstract: marking W4 marking W4 N marking l42
    Text: 03/11/99 13:58:44 Page Diodes 80&-446-48SB->683800193Z C880193ZZ BightFftX BAT54 I A 1C IS SURFACE MOUNT SCHOTTK BARRIER DIODE Features Low Tum-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection SOT-23 Mechanical Data_


    OCR Scan     		PDF -446-48SB- 683800193Z C880193ZZ BAT54 OT-23 OT-23, MIL-STD-202, Vana09- DS11005 LITES00011 ERMA 110 marking W4 marking W4 N marking l42

    UTM 218 RESISTOR

    Abstract: No abstract text available
    Text: TPA0202 STEREO 2-W AUDIO POWER AMPLIFIER SLOS2Q5- FEBRUARY 1998 • Integrated Depop Circuitry • High Power with PC Power Supply - 2 W/Ch at 5 V into a 3-Cl Load - 800 mW/Ch at 3 V MUX • Fully Specified for Use with 3-& Loads • Ultra-Low Distortion - 0.05% THD+N at 2 W and 3 -Q. Load


    OCR Scan     		PDF TPA0202 24-Pin UTM 218 RESISTOR

    MARKING 1F

    Abstract: 1SV215 C25V toshiba 0,el
    Text: 1SV215 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 5 CATV TUNING. Unit in mm • High Capacitance Ratio : C2V / C25V = 10.5 Typ. • Low Series Resistance : rs = 0.60 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV215 470MHz -X100 MARKING 1F 1SV215 C25V toshiba 0,el

    MOC205

    Abstract: MOC205 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC205 MOC206* MOC207* MOC208* Small Outline Optoisolators [CTR *4 0 -8 0 % ] Transistor Output [CTR =83-125% ] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, In a surface mountable,


    OCR Scan     		PDF RS481A MOC205 MOC206 MOC207 MOC208 MOC205 motorola