transistor SMD MARKING CODE HF
Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A
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PD-96036
HFA06TB120SPbF.
116nC
HFA06TB120S
O-220
transistor SMD MARKING CODE HF
smd code HF transistor
TRANSISTOR SMD MARKING CODE WT
AAAA series SMD transistor
smd code HF diode
TRANSISTOR SMD MARKING CODE X D
AAAA
transistor smd code marking tm
SMD MARKING CODE transistor WW
marking code dt2 transistor
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SIDC56D120E
Abstract: 2000A power diode
Text: Preliminary SIDC56D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC56D120E 1200V ICn 75A A This chip is used for:
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SIDC56D120E
50mm2
C67047-A4686
165pes
4222E,
SIDC56D120E
2000A power diode
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dm 465
Abstract: HFA135NH40 IRFP250 NC4000
Text: PD -2.465 rev. B 03/99 HFA135NH40 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 400V VF typ. = 1V IF(AV) = 135A
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HFA135NH40
290nC
dm 465
HFA135NH40
IRFP250
NC4000
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HFA08PB120
Abstract: IRFP250
Text: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4
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HFA08PB120
140nC
O-247AC
HFA08PB120
IRFP250
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HFA140NJ60D
Abstract: IRFP250
Text: PD -2.514 rev. A 02/99 HFA140NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Base AC VR = 600V VF typ. = 1.2V IF(AV) = 140A Qrr (typ.) = 340nC
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HFA140NJ60D
340nC
HFA140NJ60D
IRFP250
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HFA06TB120
Abstract: IRFP250 transistor D207
Text: Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 IF AV = 6.0A Qrr (typ.)= 116nC
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HFA06TB120
116nC
O-220AC
HFA06TB120
IRFP250
transistor D207
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PDF
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irm 1838
Abstract: HFA30PB120 IR 1838 OZ 9936 transistor D207 IRFP250
Text: Preliminary Data Sheet PD-2.604 rev. A 12/00 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.4V
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HFA30PB120
490nC
HFA30PB120
irm 1838
IR 1838
OZ 9936
transistor D207
IRFP250
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PDF
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4344
Abstract: SIDC06D60F
Text: Preliminary SIDC06D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D60F 600V ICn 15A A This chip is used for:
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SIDC06D60F
Q67050-A4038A001
4344E,
4344
SIDC06D60F
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a2206
Abstract: SIDC30D120E
Text: Preliminary SIDC30D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC30D120E 1200V ICn 35A A This chip is used for:
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SIDC30D120E
C67047-A2206E001
4182E,
a2206
SIDC30D120E
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AAAA series SMD transistor
Abstract: No abstract text available
Text: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2
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PD-20603
HFA08TB120S
140nC
HFA08TB120S
08-Mar-07
AAAA series SMD transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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PD-96037
HFA08TB60SPbF
HFA08TB60S
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 95682A HFA16PA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V 2 VF = 1.7V Qrr * = 65nC 1 di rec M/dt * = 240A/µs
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5682A
HFA16PA60CPbF
HFA16PA60C
08-Mar-07
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PDF
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PD245
Abstract: No abstract text available
Text: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. = 1V
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HFA240NJ40C
290nC
08-Mar-07
PD245
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA30TA60CS Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA30TA60CS
HFA30TA60CS
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: PD - 95680A HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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5680A
HFA08PB120PbF
140nC
O-247AC
HFA08PB120
08-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA25TB60SHM3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • Meets MSL level 1, per LF maximum peak of 260 °C
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VS-HFA25TB60SHM3
AEC-Q101
J-STD-020,
O-263ABelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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HFA16TA60C
Abstract: HFA30TA60C
Text: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI
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PD-95689
HFA30TA60CPbF
HFA30TA60C
08-Mar-07
HFA16TA60C
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to BENEFITS •
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VS-HFA30PB120PbF,
VS-HFA30PB120-N3
JEDEC-JESD47
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits Reduced RFI and EMI
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-95686A
HFA30PB120PbF
120nC
O-247AC
HFA16PB120
08-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA25TB60S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • Base cathode 2 BENEFITS • • • • • 3 Anode 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions
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HFA25TB60S
HFA25TB60S
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing
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PD-95740
HFA16TB120PbF
260nC
HFA16TB120
08-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 2 whisker test 2 • Material categorization:
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VS-HFA08TB120HN3
AEC-Q101
O-220AC
VS-HFA08TB120HN3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: HFA15TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • • Base cathode 1 Available RoHS* COMPLIANT BENEFITS 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions
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HFA15TB60SPbF
HFA15TB60S
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 IF AV = 6.0A Qrr (typ.)= 116nC
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HFA06TB120
116nC
O-220AC
HFA06TB120
08-Mar-07
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