Untitled
Abstract: No abstract text available
Text: Preliminary SF1207C • Surface Mount 3.8 x 3.8 x 1.4 mm Package • Complies with Directive 2002/95/EC RoHS Pb 836.5/881.5 MHz SAW Duplexer Absolute Maximum Ratings Rating Value Units 1.2 W CW Input Power Level, 50,000 hours, +50 °C DC Voltage 10 V Operating Temperature Range
|
Original
|
PDF
|
SF1207C
2002/95/EC
SF1207C
|
Untitled
Abstract: No abstract text available
Text: M ITEL DCR1575SY Phase Control Thyristor SEMICONDUCTOR Supersedes June 1997 version, DS4401 - 3.0 DS4401 -3.1 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. March 1998 KEY PARAMETERS 4200V DRM 2010A Jt AV
|
OCR Scan
|
PDF
|
DS4401
DCR1575SY
4000A
DCR1575SY42
DCR1575SY40
DCR1575SY38
DCR1575SY36
DCR1575SY34
DCR1575SY32
|
Untitled
Abstract: No abstract text available
Text: Features- Benefits_ • Style R J l l . ■ Immersion Sealed . ■ 25 Turn Leadscrew . ■ Threaded Bushing Available ■ Meets MIL-R-94 Requirements ■ Washable ■ High Adjustability
|
OCR Scan
|
PDF
|
MIL-R-94
|
NTE1176
Abstract: NTE1181 NTE1171 pulse metal detector audio agc preamp zener 9v 1w NTE1184 circuits metal detector NTE1174 NTE1177
Text: LINEAR INTEGRATED CIRCUITS NTE1171 8-Lead Metal Can, See Diag. 200 OP Amp, Vc c = ±18V NTE1172 14-Lead DIP, See Diag. 247 Phase-Frequency Detector, Vcc = 7V NTE1174 14-Lead Staggered DIP, See Diag. 251 TV AFT Circuit Top View O u tp u t v H N o n -In v e r t Input
|
OCR Scan
|
PDF
|
NTE1171
NTE1172
14-Lead
NTE1174
NTE1176
NTE1185
10-Lead
NTE1187
D003bb0
NTE1176
NTE1181
pulse metal detector
audio agc preamp
zener 9v 1w
NTE1184
circuits metal detector
NTE1177
|
clarostat resistor
Abstract: B 503 Potentiometers B 8
Text: Features _ Benefits_ • Style RJ11 . ■ Immersion Sealed . ■ 25 Turn Leadscrew . ■ Threaded Bushing Available .
|
OCR Scan
|
PDF
|
MIL-R-94
clarostat resistor
B 503 Potentiometers B 8
|
ca 3140 ic
Abstract: No abstract text available
Text: MITEL DNB65 Recifier Diode SEMICONDUCTOR DS4175 - 1.3 March 1998 Supersedes Septem ber 1996 version, DS4175 - 1.2 KEY PARAMETERS V RRM 4500V IF av, 2000A Ifs m 31000A APPLICATIONS • R ectification. ■ Freewheel Diode. ■ DC M otor C ontrol. ■ Pow er Supplies.
|
OCR Scan
|
PDF
|
DS4175
DNB65
1000A
DNB65
ca 3140 ic
|
RK 251 204
Abstract: No abstract text available
Text: Type R H o t-M o ld e d Trim m ing P o te n tio m e te rs Features_ Benefits_ • Style R J11 . ■ Immersion Sealed . ■ 25 Turn Leadscrew .
|
OCR Scan
|
PDF
|
MIL-R-94
RK 251 204
|
Untitled
Abstract: No abstract text available
Text: S i GEC P L ES SE Y junei997 SEMI CO NDUC TOR S DS4401-3.0 DCR1575SY PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 4200V DRM 2010A Jt AV 44000A TSM dVdt* 1000V/(is d l/ d t
|
OCR Scan
|
PDF
|
junei997
DS4401-3
DCR1575SY
4000A
500mA,
DCR1575SY42
DCR1575SY40
DCR1575SY38
DCR1575SY3lity
|
Untitled
Abstract: No abstract text available
Text: @ M ITEL DCR1575SY Phase Control Thyristor SEMICONDUCTOR Supersedes June 1997 version, DS4401 - 3.0 DS4401 -3.1 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. March 1998 KEY PARAMETERS V DRM 4200V 2010A Jt AV 44000A
|
OCR Scan
|
PDF
|
DS4401
DCR1575SY
4000A
DCR1575SY42
DCR1575SY40
DCR1575SY38
DCR1575SY36
DCR1575SY34
DCR1575SY32
|
Belcanto ST 3010
Abstract: atakassette Belcanto ST 3001 Stern Radio VEB Kombinat service-mitteilungen robotron stern elite Sonneberg Phonett
Text: SERVICE-MITTEILUNGEN V E B INDUSTRIE V E RTR IEB RU ND FU NK UND FE RN SE H EN r a d i o -television AUSGABE: S E IT E AUGUST 1 - ö Import* Zu dan BandgeräteImporten des Jahres '1974- gehören auch die ungarischen Stereo-Kassetten-Tonbandgeräte MK-!»2/MK'lt3
|
OCR Scan
|
PDF
|
III/18/379
Belcanto ST 3010
atakassette
Belcanto ST 3001
Stern Radio
VEB Kombinat
service-mitteilungen
robotron
stern elite
Sonneberg
Phonett
|
Untitled
Abstract: No abstract text available
Text: @ MITEL DNB65 Recifier Diode S E M IC O N D U C T O R DS4175 -1 .3 March 1998 Supersedes Septem ber 1996 version, DS4175 -1 .2 KEY PARAMETERS VRRM 4500V IF av, 2000A 'fs m 31000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■
|
OCR Scan
|
PDF
|
DS4175
DNB65
1000A
DNB65
|
IC str 1229
Abstract: fairchild 90028 L4W 63
Text: FAIRCHILD SALES REPRESENTATIVES C A LIFO R N IA CELTEC COMPANY 7380 C lairem ont Mesa Blvd., Suite 109 San Diego, C alifornia 92111 Tel: 714-279-7961 TWX: 910 -33 5-15 12 KANSAS B.C. ELECTRONICS 1015 W est Santa Fe Olathe, Kansas 66061 Tel: 913 -78 2-66 96 TWX: 910 -74 9-64 14
|
OCR Scan
|
PDF
|
|
64TI
Abstract: No abstract text available
Text: A r -A r 28 6 8.5 8tO .25 7 l.5 8 t0 .2 5 TYP 2.54 CENTRES 27 6 6 .0 4 i0 .2 5 6 9 .0 4 tO .2 5 26 6 3 .5 0 t0 .2 5 6 6 .5 0 t0 .2 5 25 6 0 .9 6 t0 .2 5 6 3.9 6tO .25 24 5 8 .4 2 t0 .2 5 6 l.4 2 tO .2 5 23 5 5.8 8tO .25 58.88tO .25 LOCKING FEATURE OPTIONAL
|
OCR Scan
|
PDF
|
UL94V-0
64TI
|
sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
|
OCR Scan
|
PDF
|
N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
|
|
|
mosfet K 2865
Abstract: BF1107 ic sc 6200 passive loopthrough
Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
|
OCR Scan
|
PDF
|
BF1107
115102/00/01/pp8
mosfet K 2865
BF1107
ic sc 6200
passive loopthrough
|
Untitled
Abstract: No abstract text available
Text: Microwave Photodiode Receivers 2510A/B 2515A/B 2516A/B/C 2518A/B 4510A/B 4515A/B 4516A/B/C 4518A/B 10450A/B 10455A/B 10456A/B/C 1045 8A/B D S A H T E A E T rtel microwave photodiode receivers are ideally suited for use in analog O Wideband analog signal reception
|
OCR Scan
|
PDF
|
510A/B
515A/B
516A/B/C
518A/B
0450A/B
0455A/B
|
4518A
Abstract: ORTEL pin photodiode 20 ghz 2510A 2518A D 4515 photodiode ge pin photodiode 10 ghz ortel receiver Ortel microwave photodiode
Text: 2510A/B 2515A/B 2516A/B/C 2518A/B O 4510A/B 4515A/B 451 6A/B/C 4518A/B 10450A/B 10455A/B 10456A/B/C 1045 8A/B A D S H E rtel microwave photodiode receivers are ideally suited for use in analog Wideband analog signal reception fiberoptic communications. W ith their wide bandwidth and flat response,
|
OCR Scan
|
PDF
|
510A/B
515A/B
516A/B/C
518A/B
0450A/B
0455A/B
456A/B/C
4518A
ORTEL
pin photodiode 20 ghz
2510A
2518A
D 4515
photodiode ge
pin photodiode 10 ghz
ortel receiver
Ortel microwave photodiode
|
Untitled
Abstract: No abstract text available
Text: Multilayer chip capacitors have a low residual inductance, an excellent frequency response and minimal stray capacitance since there are no leads. These characteristics enable design to be very close to the theoretical values of the capacitors. SPECIFICATIONS:
|
OCR Scan
|
PDF
|
30PPM/
50KHZ
|
RXSP 14
Abstract: RK 251 201-AN AE304 RXMA2 b250 ed rk 251 401-ad RK 251 201 S232 RXKH RXMM 1
Text: ASEA C a ta lo g u e RK 27-12 E E ditiun 1 S e p te m b e r 1 ^ 7 0 Indicators type RXSP File Ff, P a rt 1 C lO lM jB ll IF lL lE lX r • *• U sed to g e th e r with rela ys Ln p ro te c tiv e p. 2 G e n e ra l lion or p a rt o f it has o p e ra te d .
|
OCR Scan
|
PDF
|
ind200
RXMA21}
19BO-D9
RXSP 14
RK 251 201-AN
AE304
RXMA2
b250 ed
rk 251 401-ad
RK 251 201
S232
RXKH
RXMM 1
|
Untitled
Abstract: No abstract text available
Text: @ M ITEL DCR1595SW Phase Control Thyristor SEMICONDUCTOR S u p e rs e d e s N o v e m b e r 1 9 9 7 v e rs io n , D S 4 2 4 8 - 3.2 D S 4 2 4 8 •■3.3 APPLICATIONS ■ High P ow er Drives. ■ High V oltag e P ow er Supplies. ■ D C M otor Control. ■
|
OCR Scan
|
PDF
|
DCR1595SW
S4248
3750A
DCR1595SW42
DCR1595SW41
DCR1595SW40
DCR1595SW39
DCR1595SW38
DCR1595SW37
400mA,
|
Untitled
Abstract: No abstract text available
Text: V23806-A84-T2 SIEMENS Single Mode 155 MBd ATM 1x9Transceiver with ST Connector Dimensions in mm inches ffl (Lead cross section and standoff size) (2 . 0 ) (a) Centerline sttz zz z z z z z z : (1.0+O.1) .0 28+004 I . 0 4 ±. o o 4 If“ PC board (4.0+0 2 )(a)
|
OCR Scan
|
PDF
|
V23806-A84-T2
54M20
D-13623,
de/Semiconductor/products/37/376
|
N2C2
Abstract: L16C N-8C british
Text: proLimited Description Rugged lever sw itc h e s available in tw o sizes a c c o m m o d a tin g a m axim um of e ither 2 4 or 4 8 c o m b operated tw in co n ta cte d springs in various s w itc h in g co m b in a tio n s The Keys are designed fo r close pitch panel m o u n tin g and have a
|
OCR Scan
|
PDF
|
DW/4/86/2000
N2C2
L16C
N-8C
british
|
Untitled
Abstract: No abstract text available
Text: SIEMENS V23806-A84-T20 Single Mode 155 M Bd ATM 1x9Transceiver w ith Isolated Stud Pins and High Sensitivity w ith ST Connector Dimensions in mm inches m (11.5 max) PC board .453 max thickness , ' (2 . 0 ) (a) .08 View Z (Lead cross section and standoff size)
|
OCR Scan
|
PDF
|
V23806-A84-T20
D-13623,
iconductor/products/37/376
|
E355D
Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20
|
OCR Scan
|
PDF
|
|
