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    RJK2075DPA Search Results

    RJK2075DPA Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK2075DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 200V 20A 69Mohm Wpak3F) Visit Renesas Electronics Corporation
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    RJK2075DPA Price and Stock

    Renesas Electronics Corporation RJK2075DPA-00-J5A

    MOSFET N-CHANNEL 200V 20A WPAK
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    DigiKey RJK2075DPA-00-J5A Reel 6,000 3,000
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    RJK2075DPA-00-J5A Digi-Reel 1
    • 1 $3.24
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    RJK2075DPA-00-J5A Cut Tape 1
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    Renesas Electronics Corporation RJK2075DPA-00#J5A

    MOSFET - Tape and Reel (Alt: RJK2075DPA-00#J5A)
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    Avnet Americas RJK2075DPA-00#J5A Reel 18 Weeks 3,000
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    Mouser Electronics RJK2075DPA-00#J5A 2,990
    • 1 $2.8
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    Renesas Electronics America RJK2075DPA-00#J5A Tape & Reel (TR) 6,000 1
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    RJK2075DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK2075DPA-00#J5A Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 200V 20A WPAK Original PDF

    RJK2075DPA Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0100 Rev.1.00 Jul 24, 2012 Features • Low on-resistance RDS on = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		PDF RJK2075DPA R07DS0856EJ0100 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0200 Rev.2.00 Jan 10, 2013 Features • Low on-resistance RDS on = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		PDF RJK2075DPA R07DS0856EJ0200 PWSN0008DE-A

    D 417

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0100 Rev.1.00 Jul 24, 2012 Features • Low on-resistance RDS on = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		PDF RJK2075DPA R07DS0856EJ0100 PWSN0008DE-A D 417

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1