Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0100 Rev.1.00 Jul 24, 2012 Features • Low on-resistance RDS on = 0.054 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
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Original
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PDF
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RJK2075DPA
R07DS0856EJ0100
PWSN0008DE-A
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D 417
Abstract: No abstract text available
Text: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0100 Rev.1.00 Jul 24, 2012 Features • Low on-resistance RDS on = 0.054 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
|
Original
|
PDF
|
RJK2075DPA
R07DS0856EJ0100
PWSN0008DE-A
D 417
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