RJK03M6DNS Search Results

RJK03M6DNS Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK03M6DNS-00#J5		Renesas Electronics Corporation	N Channel Power MOSFET, HWSON, /Embossed Tape

RJK03M6DNS Price and Stock

Filter by Manufacturer


Rochester Electronics LLC RJK03M6DNS-00-J5 MOSFET N-CH 30V 16A 8HWSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK03M6DNS-00-J5	Bulk	25,000		601	1 - 10 - 100 - 1000 $0.5 10000 $0.5	Buy Now
Rochester Electronics LLC RJK03M6DNS-WS-J5 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK03M6DNS-WS-J5	Bulk	3,610		812	1 - 10 - 100 - 1000 $0.37 10000 $0.37	Buy Now
Renesas Electronics Corporation RJK03M6DNS-00#J5 Power Field-Effect Transistor, N-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJK03M6DNS-00#J5		25,000		1	1 $0.504 10 $0.504 100 $0.4738 1000 $0.4284 10000 $0.4284	Buy Now
Renesas Electronics Corporation RJK03M6DNS-WS#J5 Power Field-Effect Transistor, N-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJK03M6DNS-WS#J5		3,610		1	1 $0.3733 10 $0.3733 100 $0.3509 1000 $0.3173 10000 $0.3173	Buy Now

RJK03M6DNS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK03M6DNS-00#J5		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16A HWSON		Original	PDF

RJK03M6DNS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)	Original	PDF	RJK03M6DNS R07DS0771EJ0110 PWSN0008JB-A
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)	Original	PDF	RJK03M6DNS R07DS0771EJ0110 PWSN0008JB-A
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1