smd diode J476
Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor
Text: TECHNICAL NOTETECHNICAL NOTE Certifications of of Quality Quality Management ManagementSystem System as (asofofJun. Jun.2007 2006) Certifications (Malaysia) ELNA-LELON ELECTRONICS (SUZHOU)ELECTRONICS CO., LTD. ELNA-LELON (China) (SUZHOU) CO., LTD. (China)
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1F/DZN-2R5D105T
ISO/TS9001
MY04/0675T2
003ristics
100mA
5V100F)
2007/2008E
smd diode J476
LP5 ELNA
diode sy 170/2
smd J476
RJ3 Elna
SYF-1A335M-RJ
ELNA RE2
DCK-3R3E224U-E
10 micro farad 25 v electrolytic capacitor
22 35L CAPacitor
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smd diode J476
Abstract: 10 35L W1 RJ3 Elna smd 3528 led strip elna cerafine 10 micro farad 25 v electrolytic capacitor Elna ce 85 smd C475 ST T4 3570 431 SY4
Text: Certifications of Quality Management System as of Jun. 2006 Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JP05/60268QA Aluminum electrolytic capacitors
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JP05/60268QA
MY04/0675T2
SG02/20012
100mA
5V100F)
2006/2007E
smd diode J476
10 35L W1
RJ3 Elna
smd 3528 led strip
elna cerafine
10 micro farad 25 v electrolytic capacitor
Elna ce 85
smd C475
ST T4 3570
431 SY4
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A7K1
Abstract: No abstract text available
Text: L Z Z P S O L PS » REV. DATE W. M ft # DCN NO. M M CHK. * U APPD. NiM vya A 1 B/8-18U N EF-2A NOTE 1 13.65) hs : H D E S I G N A T I 0 N B - R J L 0 4 V S E R IE S 2/ ij - X Z RECEPTACLE . (N o om ^-^NOTE 3 (MIN. PERF. THD) 1 5 .9 h=- H ± 0.79
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B/8-18U
-23PE^
A7K1
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NE5217D
Abstract: No abstract text available
Text: Philips Sem iconductors Data C om m unications Products Product specification Postamplifier with link status indicator DESCRIPTION NE/SA5217 PIN CONFIGURATION The NE /S A5217 is a 75M Hz postam plifier system designed to accept low level high-speed signals. These signals are converted
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NE/SA5217
A5217
E5217
NE5212A
NE5217
NE5214
AB1432.
NE5217D
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RJH 30 a3
Abstract: No abstract text available
Text: CY7C269 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • High speed commercial and military — 15-ns max set-up — 12-ns clock to output • Low power — 660 mW (commercial) — 770 mW (military) • On-chip diagnostic shift register — For serial observability and con
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CY7C269
15-ns
12-ns
7C269W)
300-mil,
28-pin
CY7C269
RJH 30 a3
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Untitled
Abstract: No abstract text available
Text: CY7C269 CYPRESS Features • CMOS for optimum speed/power • High speed commercial and military — 15-ns address set-up — 12-ns clock to output • Low power — 660 mW (commercial) — 770 mW (military) • On-chip edge-triggered registers — Ideal for pipelined micropro
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15-ns
12-ns
7C269W)
300-mil,
28-pin
CY7C269
CY7C269
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LC 7258
Abstract: 7C266 203CE
Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)
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CY7C266
CY7C266
32-Pin
28-Lead
600-Mil)
LC 7258
7C266
203CE
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DS1204U
Abstract: No abstract text available
Text: D S 1206 DALLAS SEMICONDUCTOR DS1206 Phantom Serial Interface Chip FEATURES PIN ASSIGNMENT • Minimum expense a d d -o n serial port NC : : 1 14 : v cc 2 13 : RST 12 : DQ 11 • Co nve rts stan d ard bytewi d e o rD R A M m e m o ry w ave form s into a 3 -w ire serial port
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PS1201"
DS1204U
DS1290
DS1206
S1206
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semiconductor c243
Abstract: C2432
Text: CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C 243 and CY7C244 are packaged in 300-m il-wide and 600-mil-wide packages respectively. The re programmable packages are equipped with an erasure w in
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CY7C243
CY7C244
CY7C244
300-m
600-mil-wide
semiconductor c243
C2432
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333Q
Abstract: 27C64 CY7C266 a50tb
Text: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64
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CY7C266
27C64
CY7C266
600-mil-wide
45LMB
32-Pin
CY7C266â
45QMB
333Q
a50tb
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Untitled
Abstract: No abstract text available
Text: CY7C243 CY7C244 Er - g 3 CYPRESS Features 4K X 8 Reprogrammable PROM • Capable o f withstanding greater than 2001V static discharge • CMOS for optimum speed/power • TTL-compatible I/O • Windowed for reprogrammability • Direct replacement for bipolar
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CY7C243
CY7C244
300-m
600-mil
CY7C243
CY7C244
300-mil-wide
600-mil-wide
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7C261
Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
Text: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power
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Ob704
CY7C261
CY7C263/CY7C264
7C261)
300-mil
600-mll
CY7C261,
CY7C263,
CY7C264
8192-word
7C261
7C261-25
C2612
CY7C263-45DC
C2613
J-64
CY7C263-35DMB
DIODE SMD W12 75
C261
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7C261
Abstract: 7c264
Text: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de vices and offer the advantages of lower
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7C261)
300-mil
600-mil
CY7C261
CY7C263/CY7C264
CY7C261,
CY7C263,
CY7C264
24-Lead
7C261
7c264
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LC 7258
Abstract: AG04
Text: ^ CY7C266 SEMICONDUCTOR 8K x 8 PROM PowerSwitched and Reprogrammable Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)
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CY7C266
7C266
32-Pin
600-M
LC 7258
AG04
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333Q
Abstract: CY7C269 C2692
Text: CY7C269 CYPRESS Features • • C M O S for optim um speed/pow er • H igh speed com m ercial and m ilitary — 15-ns ad dress set-up • — 12-ns clock to output • O n-chip d iagn ostic sh ift register — For serial ob servability and con trollab ility o f the ou tpu t register
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CY7C269
15-ns
12-ns
7C269W)
300-mil,
28-pin
CY7C269
38-00069-G
001SS
333Q
C2692
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ALC201
Abstract: 333Q CY7C269
Text: CY7C269 CYPRESS SEMICONDUCTOR • CM OS for optimum speed/power • High speed commercial and military — 15-ns max set-up — 12-ns clock to output On-chip diagnostic shift register — For serial observability and con trollability o f the output register
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CY7C269
15-ns
12-ns
7C269W)
300-mil,
28-pin
CY7C269
38-00069-G
ALC201
333Q
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Untitled
Abstract: No abstract text available
Text: CY7C265 CYPRESS 8K x 8 Registered PROM Features Functional D escription • CMOS for optimum speed/power • High speed commercial and military — 15 ns address set-up — 12 ns clock to output • Low power — 660 mW (commercial) — 770 mW (military)
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CY7C265
CY7C265
193rd
28-Lead
300-Mil)
0G1S575
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Untitled
Abstract: No abstract text available
Text: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port
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CY7B134
CY7B135
CY7B1342
CY7B134,
CY7B135,
CY7B1342
GD15bDfl
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S-8324AXXM
Abstract: HA2010
Text: Contents Features. 1 A Block D iagram . 1 Selection G u id e .2
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S-8324/8328
S-8324AXXM
HA2010
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L6281
Abstract: Stepper driver board with L297 L6203 circuit L6201P Stepper driver board with L297 L6203 L297 used for 24V/ 5A DC motor CI L297 L6203 L6203 H bridge IC L6202 L6506
Text: L6201 - L6201P L6202 - L6203 Æ 7 SG S-TH O M SO N ^ 7#. R!ôll ^©li[L[i ÏIS3©R!l] êi DMOS FULL BRIDGE DRIVER PRELIMINARY DATA . SUPPLY VOLTAGE UP TO 42V • 5A MAX PEAK CURRENT (2A max. for L6201 . TOTAL RMS CURRENT UP TO L6201:1 A; L6202:1.5A; L6203/L6201 P:4A
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L6201
L6201P
L6202
L6203
L6201)
L6203/L6201
T0100
L6281
Stepper driver board with L297 L6203 circuit
Stepper driver board with L297 L6203
L297 used for 24V/ 5A DC motor
CI L297
L6203
L6203 H bridge IC
L6506
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Untitled
Abstract: No abstract text available
Text: fax id: 5222 •= CYPRESS CY7C007 CY7C017 PRELIMINARY 32K x 8/9 Dual-Port Static RAM Fully asynchronous operation Automatic power-down Expandable data bus to 16/18 bits or more using Mas ter/Slave chip select when using more than one device On-chip arbitration logic
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CY7C007
CY7C017
80-pin
68-pin
IDT7007
CY7C007)
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76139
Abstract: CY7B138 CY7B139
Text: CY7B138 CY7B139 CYPRESS 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high performance • High-speed access — 15 ns com’l — 25 ns (mil) • Automatic power-down • Fully asynchronous operation
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CY7B138
CY7B139
68-pin
CY7B139
CY7B138/9
38-00162-G
DD15b5M
76139
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 7 3 0 B IB M 1 1 M 1 6 7 3 0 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 V ss/V qc pins) - 4 Byte Interleave enabled
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16Mx72
110ns
IBM11M16730B
IBM11M16730C
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7c024
Abstract: No abstract text available
Text: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241)
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CY7C024/0241
CY7C025/0251
CY7C024)
CY7C0241)
CY7C025)
CY7C0251)
65-micron
7c024
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