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    45QMB Price and Stock

    Rochester Electronics LLC CY7C261-45QMB

    IC EPROM 64KBIT PARALLEL
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    DigiKey CY7C261-45QMB Bulk 301 6
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    Infineon Technologies AG CY7C261-45QMB

    PROM - Bulk (Alt: CY7C261-45QMB)
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    Avnet Americas CY7C261-45QMB Bulk 4 Weeks 7
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    Teledyne e2v QP7C261-45QMB

    PROM, UV ERASABLE, 8K X 8, 45 NS ACCESS - Rail/Tube (Alt: QP7C261-45QMB)
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    Avnet Americas QP7C261-45QMB Tube 250
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    Teledyne e2v QP7C271-45QMB

    PROM, UV ERASABLE, 32K X 8, 45 NS ACCESS - Rail/Tube (Alt: QP7C271-45QMB)
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    Avnet Americas QP7C271-45QMB Tube 250
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    Teledyne e2v CY7C274-45QMB

    PROM, UV ERASABLE, 32K X 8, 45 NS ACCESS - Rail/Tube (Alt: CY7C274-45QMB)
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    Avnet Americas CY7C274-45QMB Tube 250
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    45QMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2665

    Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
    Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    Original     		PDF CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666

    27C64

    Abstract: CY7C266 R1250 direct replacement
    Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit


    Original     		PDF CY7C266 CY7C266 600-mil-wide 27C64 R1250 direct replacement

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0

    Untitled

    Abstract: No abstract text available
    Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)


    OCR Scan     		PDF 300-mil CY7C271A CY7C271A 768-word 7C271A S50Tbb2 GG1530Q

    LC 7258

    Abstract: 7C266 203CE
    Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)


    OCR Scan     		PDF CY7C266 CY7C266 32-Pin 28-Lead 600-Mil) LC 7258 7C266 203CE

    CY27H010-45PC

    Abstract: CY27H010-55Wmb 27H010 CY27H010
    Text: CY27H010 « r CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected


    OCR Scan     		PDF CY27H010 32-pin -32-pin 32-pin, 600-mil CY27H010 ThZ32 CY27H010-45PC CY27H010-55Wmb 27H010

    46E SMD CODE

    Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
    Text: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C271 CY7C274 768-word T-46-13-29 46E SMD CODE 7C271 7C274 C2716 RAAW

    Untitled

    Abstract: No abstract text available
    Text: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization


    OCR Scan     		PDF CY27H512 28-pin 28-pin, 600-mil 32-pin CY27H512

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS Features 32K X8 High-Speed CMOS EPROM Functional Description rapid transition to and from three-stated outputs. The CY27H256 is a high-perform ance, 256K CM OS E P R O M organized in 32 Kbytes. It is available in industry-standard 28-pin, 600-mil DIP, 32-pin LCC and


    OCR Scan     		PDF CY27H256 28-pin, 600-mil 32-pin 28-pin CY27H256 001S2m

    W184-5

    Abstract: D10DE
    Text: CY7C273 PRELIMINARY CYPRESS SEMICONDUCTOR Features • 0.8-micron CMOS for optimum speed/ power • High speed — 40 ns access time • 16-bit-wide words • 40-pin, 600-mil-wide DIP packages • 44-pin PLCC and 44-pin LCC packages • Direct replacement for EPROMs


    OCR Scan     		PDF CY7C273 16-bit-wide 40-pin, 600-mil-wide 44-pin CY7C273 16K-word 16-bit W184-5 D10DE

    Untitled

    Abstract: No abstract text available
    Text: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)


    OCR Scan     		PDF CY27H010 32-pin 32-pin, 600-mil CY27H010

    CERAMIC LEADLESS CHIP CARRIER

    Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
    Text: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •


    OCR Scan     		PDF CY7C245A 15-ns 10-ns 300-mil, 24-pin CY7C245A progra8735 CY7C245Aâ 25LMB CERAMIC LEADLESS CHIP CARRIER la crosse technology smd UJ 99 7C245A 0G152

    7C271

    Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
    Text: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C274 768-word 7C271/7C274 CY7C271 7C271 CY7C271-45WMB 333Q C271 7C274 CY7C274-55WC 57C27-1 7C271-55

    CY10E301

    Abstract: 7C245A CY7C245A CLCC 64 pins footprint CY7C245A-25QMB motorola 28pin smd control board
    Text: CYPRESS SEMI CONDUCTOR bSE J> 2Sf i ^t . bS 0010171 7bE CY7C245A r^ Y p p irc c ; Reprogrammable 2K x 8 Registered PROM SEMICONDUCTOR • SV ±10% V cci commercial and military Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed


    OCR Scan     		PDF CY7C245A 15-ns 10-ns 300-mil, 24-pin 2048-OR T-90-20 CY10E301 7C245A CLCC 64 pins footprint CY7C245A-25QMB motorola 28pin smd control board

    LC 7258

    Abstract: C-274
    Text: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)


    OCR Scan     		PDF QQ1GS50 CY7C271 CY7C274 300-mil 7C271) LC 7258 C-274

    7C261

    Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
    Text: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power


    OCR Scan     		PDF Ob704 CY7C261 CY7C263/CY7C264 7C261) 300-mil 600-mll CY7C261, CY7C263, CY7C264 8192-word 7C261 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB DIODE SMD W12 75 C261

    Untitled

    Abstract: No abstract text available
    Text: CY7C243 CY7C244 Er - g 3 CYPRESS Features 4K X 8 Reprogrammable PROM • Capable o f withstanding greater than 2001V static discharge • CMOS for optimum speed/power • TTL-compatible I/O • Windowed for reprogrammability • Direct replacement for bipolar


    OCR Scan     		PDF CY7C243 CY7C244 300-m 600-mil CY7C243 CY7C244 300-mil-wide 600-mil-wide

    Untitled

    Abstract: No abstract text available
    Text: /U£ho. vveune*uay, iviay 11, i«*h Revision: August 19,1994 CY7C243 CY7C244 :# C Y PR ESS 4K x 8 Reprogrammable PROM • Capable of withstanding greater than 2001V static discharge Features • CMOS for optimum speed/power The CY7C243 and CY7C244 are plug-in


    OCR Scan     		PDF CY7C243 CY7C244 CY7C243 CY7C244

    CY7C263

    Abstract: 7C264 7C261 C261 CY7C261 CY7C264 CY7C263-45WC CY7C264-55 cy7c261-45wmb CY7C264-45WMB
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    OCR Scan     		PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word 600-M CY7C263 7C264 7C261 C261 CY7C263-45WC CY7C264-55 cy7c261-45wmb CY7C264-45WMB

    Untitled

    Abstract: No abstract text available
    Text: CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Features Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output registers (7C277) Optional registered/latched address


    OCR Scan     		PDF CY7C277 CY7C279 7C277) 7C279) 300-mil, 28-pin

    Untitled

    Abstract: No abstract text available
    Text: CY7C271 CY7C274 CYPRESS • - = •— SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power


    OCR Scan     		PDF CY7C271 CY7C274 300-mil 7C271) CY7C271 CY7C274 768-word 7C271/7C274 7C271

    H256

    Abstract: CY27H256 2411AS
    Text: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


    OCR Scan     		PDF CY27H256 32-pin -28-pin 28-pin, 600-mil CY27H256 H256 2411AS

    CY27H010-45PC

    Abstract: 27H010-70 27H010-45 27H010 CY27H010
    Text: ^ 0 CY27H010 CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected


    OCR Scan     		PDF CY27H010 32-pin -32-pin 32-pin, 600-mil CY27H010â CY27H010-45PC 27H010-70 27H010-45 27H010

    27H256-30

    Abstract: CY27H256 H2568 27H256-55
    Text: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the


    OCR Scan     		PDF CY27H256 32-pin -28-pin 28-pin, 600-mil 27H256-30 H2568 27H256-55