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    RIP TRANSISTOR Search Results

    RIP TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    RIP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "embedded dram" and market share 2010

    Abstract: "embedded dram" and market share Motherboard SERVES SOLUTIONS ALI chipset PC333 rAM FeRAM Transmeta PC200 PC333 VCM driver mobile
    Text: Future DRAM Requirements Addressing the Needs of the Industry Name: Title: Company: Division/ Department: Gil Russell Infineon Technologies AG MP SM PM Historic View DRAM MEMORY ROAD; is soon forgotten BEDO RIP FPM EDO VRAM RIP Static Column RIP 5V Asynchronous


    Original     		PDF PC100 PC133 "embedded dram" and market share 2010 "embedded dram" and market share Motherboard SERVES SOLUTIONS ALI chipset PC333 rAM FeRAM Transmeta PC200 PC333 VCM driver mobile

    SiGe POWER TRANSISTOR

    Abstract: AND8068 Nortel OC-192
    Text: AND8068/D Chips that Rip SiGe Activates the Next Generation of Broadband Communication Devices http://onsemi.com APPLICATION NOTE • Asynchronous Transfer Mode ATM switches • Passive Optical Network (PON) • Smart ATM+Internet Protocol (IP) networking


    Original     		PDF AND8068/D r14525 SiGe POWER TRANSISTOR AND8068 Nortel OC-192

    PHOTOTRANSISTOR 3 PIN

    Abstract: rIP 31 TRANSISTOR led phototransistor 3 pin Infrared phototransistor TO18 3 pin phototransistor IR LED infrared led Transistor AC 51 Photosensors Optoisolators "Photo Interrupter" dual transistor
    Text: OPTOELECTRONICS D e s c rip tio n TABLE OF CONTENTS Page D e s c rip tio n Page How To Use This Catalog 2 INFRARED IR COMPONENTS Part Number Index 3 How To Use The Infrared (IR) Section 31 Infrared (IR) Specification Definitions 32 Plastic Infrared Liqht Emittinq Diodes


    OCR Scan     		PDF To-18 T-100) T-100 QTLP91X-X QTLP650X-X /QTLP670X-X PHOTOTRANSISTOR 3 PIN rIP 31 TRANSISTOR led phototransistor 3 pin Infrared phototransistor TO18 3 pin phototransistor IR LED infrared led Transistor AC 51 Photosensors Optoisolators "Photo Interrupter" dual transistor

    Untitled

    Abstract: No abstract text available
    Text: rZ J SGS-THOMSON ^ 7 / [«»[lUglgTOMntgl_MSC81002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . EMITTER BALLASTED . VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC ST RIP AC PACKAGE . Pout = 2.0 W MIN. WITH 10 dB GAIN @


    OCR Scan     		PDF MSC81002 MSC810 MSC81002 C127317

    transistor smd marking mx

    Abstract: smd marking ARB TRANSISTOR SMD MARKING CODE ARB Siemens+TDA+2026
    Text: SIEMENS PEB 2026 PEF 2026 Table of Contents Page 1 1.1 1.2 1.3 General D e s c rip tio n .3 F e a tu re s . 5


    OCR Scan     		PDF P-DSO-20-10 transistor smd marking mx smd marking ARB TRANSISTOR SMD MARKING CODE ARB Siemens+TDA+2026

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MSC82001 lELC RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS EMITTER BALLASTED REFRACTORYyGOLD METALLIZATION VSWR CAPABILITY oo ;1 @ RATED CONDITIONS HERMETIC ST RIP AC PACKAGE P out = 1.0 W MIN. WITH 7 .0 dB GAIN @ 2 .0 GHz


    OCR Scan     		PDF MSC82001 MSC82001 J13502

    TG 2039

    Abstract: 2SD1876 TV horizontal Deflection Systems 2SD187
    Text: Ordering number:EN 2423 2 S D 1 8 7 6 NPN T rip le Diffused Planar Type S ilicon Transistor Color TV Hori zontal Deflection Output Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output Features . High speed tf=100ns


    OCR Scan     		PDF 100ns TG 2039 2SD1876 TV horizontal Deflection Systems 2SD187

    4027bc

    Abstract: No abstract text available
    Text: CD4027BM/CD4027BC g g National Semiconductor CD4027BM/CD4027BC Dual J-K Master/Slave Rip-Rop with Set and Reset General Description Features These dual J-K flip-flops are monolithic complementary MOS CMOS integrated circuits constructed with N-and P-channet enhancement mode transistors. Each flip-flop


    OCR Scan     		PDF CD4027BM/CD4027BC CD4027BM/CD4027BC 4027bc

    U237A

    Abstract: U237 2SC3457
    Text: Ordering num ber:EN 1580C f SA\YO _2SC3457 No.1580C NPN T rip le Diffused planar Type S ilico n Transistor 1 F or Sw it c h in g Reg ulator s Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ . . Wide ASO.


    OCR Scan     		PDF 1580C 2SC3457 300ps Cycled10% U237A U237 2SC3457

    NDS9933

    Abstract: Transistor c 4138 LA 4138
    Text: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.


    OCR Scan     		PDF NDS9933 bSD113D NDS9933 Transistor c 4138 LA 4138

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device [»i rip nal rm föi ryi ryi Lr-vJ PNP rv n rv i LU LU LU LU LU LU LU MAXIMUM RATINGS Rating Symbol Value Unit


    OCR Scan     		PDF MPQ3467/D MPQ3467 O-116

    TV horizontal Deflection Systems LG

    Abstract: 2SD1884 08af TV horizontal Deflection Systems power ic of lg tv
    Text: Ordering number: EN 2431 2S D 1884 ised Planar Typ NPN T rip le Diffused Type I icon S ilic o n Transistoi Transistor Color TV Hori zo n ta l D e flection Output Appli cations Applications . Color TV horizontal deflection output . Color display horizontal deflection output


    OCR Scan     		PDF 100ns Ne2431-3/3 TV horizontal Deflection Systems LG 2SD1884 08af TV horizontal Deflection Systems power ic of lg tv

    EF6800

    Abstract: EF6820P
    Text: F6820 FAIRCHILD Perinheral Ariantpr 1 I V I U I IIntprfacp I I I v i 1G v v M U C IU Id A Schlumberger Company PIA Microprocessor Product Logic Symbol Description T h eF6820* P e rip h e ra l In te rfa c e A d a p te r (PIA) p ro v id e s th e u n iv e rs a l m e ans o f in te rfa c in g p e rip h e ra l e q u ip m e n t to


    OCR Scan     		PDF F6820 eF6820* F6800 F6820P EF6800 EF6820P

    Untitled

    Abstract: No abstract text available
    Text: Y XC4000, XC4000A, XC4000H Logic Cell Array Families ^ Product Description Features D e sc rip tio n • Third Generation Field-Programmable Gate Arrays - Abundant flip-flops - Flexible function generators - On-chip ultra-fast RAM - Dedicated high-speed carry-propagation circuit


    OCR Scan     		PDF XC4000, XC4000A, XC4000H XC4000 XC4000H XC4010-5PG191C MIL-STD-883C

    NDT451AN

    Abstract: u1130
    Text: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,


    OCR Scan     		PDF NDT451AN OT-223 bSQ1130 NDT451AN u1130

    CA30288

    Abstract: CA3053 ca3028 ca3049 CA3051 500bw
    Text: Selection Guide DIFFERENTIAL AMPLIFIERS Typo D e s c rip tio n CA3002 IF Amplifier CA3028A Differential /C ascode Amplifiers CA30288 F ea tures • Balanced differential-am ptifier configuration with controlled constant-current source • RF, if, and video frequency capability


    OCR Scan     		PDF CA3002 CA3028A CA30288 CA3049 500MHz CA3028B A3028 CA3053 ca3028 ca3049 CA3051 500bw

    L600M

    Abstract: No abstract text available
    Text: Panasonic ICs for Motor AN3840NSR VTR Capstan-Drive 1C • Overview AN3840NSR Unit ; mm The AN 3840N SR is an 1C for driving the V T R capstan motor. The reduction of acoustic noise, vibration and torque rip­ ple of motor can be realized. ■ Features • Output transistor built-in


    OCR Scan     		PDF AN3840NSR 3840N 24-pin HSQP024-P-0450) 0D12A03 L600M

    LCX017BL

    Abstract: LCX* sony
    Text: SONY AMmïâe^ Information 4.6 cm 1.8-inch 786K-dot LCD for XGA Data Projector LCX017BL d e s c rip tio n ^ The LCX017BL is an active matrix LCD addressed by polycrystalline silicon super thin film transistors with a built-in peripheral driving circuit. This black-and-white panel has a square


    OCR Scan     		PDF 786K-dot LCX017BL LCX017BL XD2453Q 32-pin) LCX* sony

    Untitled

    Abstract: No abstract text available
    Text: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MSC82306 ;L[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS PRELIM INA R Y DATA « R EFRACTORY\G O LD METALLIZATION • VSW R CAPABILITY 20:1 @ RATED C O N D ITIO N S . H ER M ETIC ST RIP AC PACKAGE . P o u t = 5.5 W MIN. W ITH 9.6 dB GAIN


    OCR Scan     		PDF MSC82306 MSC82306

    445-021

    Abstract: EL4450C EL4450CM EL4450CN QCXG002
    Text: EL4450C éiantec EL4450C Wideband Four-Quadrant Multiplier HIGH PERFORMANCE ANAtflG INTEGRATED CIRCUITS F e a tu re s G en era l D e sc rip tio n • Complete four-quandrant multiplier with output amp— requires no extra components • Good linearity o f 0.3 %


    OCR Scan     		PDF EL4450C EL4450CN 14-Pin MDP0031 EL4450CM 14-Lead MDP0027 EL4450C 3121S57 445-021 EL4450CN QCXG002

    diode 1BL

    Abstract: NDS356P
    Text: March 1996 Na t i o n a l Semiconductor ” NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor F eatu re s • -1.1 A, -20V. RDS 0N1 = 0.3Q @ VGS = -4.5V. G en eral D e sc rip tio n These P-Channe! logic level enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF NDS356P bS01130 diode 1BL NDS356P

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON í PTE 20266 45 Watts, 1.8-2.0 GHz PCN/PCS Po w e r T ransistor D e sc rip tio n The 20266 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20031 40 Watts, 420-470 MHz UHF TV Power Transistor D e s c rip tio n The 20031 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 420 to 470 MHz. It is rated at 40 watts minimum output power, and may be used for both CW and


    OCR Scan     		PDF