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    NDS9933 Price and Stock

    onsemi NDS9933

    MOSFET 2P-CH 20V 3.2A 8SOIC
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    DigiKey NDS9933 Reel 2,500
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    onsemi NDS9933A

    MOSFET 2P-CH 20V 2.8A 8SOIC
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    DigiKey NDS9933A Reel 2,500
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    National Semiconductor Corporation NDS9933

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    Bristol Electronics NDS9933 2,196
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    ComSIT USA NDS9933 2,180
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    Fairchild Semiconductor Corporation NDS9933A

    MOSFET Transistor, Matched Pair, P-Channel, SO
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    Quest Components NDS9933A 1,420
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    NDS9933A 1,384
    • 1 $2.28
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    • 1000 $0.9405
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    Rochester Electronics NDS9933A 930 1
    • 1 $0.3185
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    ComSIT USA NDS9933A 2,230
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    NDS9933 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDS9933 National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 3.2A 8-SOIC Original PDF
    NDS9933 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9933A Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933A Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS9933A National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9933A Fairchild Semiconductor 8192-Bit Standard 2-Wire Bus Interface Serial EEPROM Scan PDF
    NDS9933A National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDS9933 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS9933A

    Abstract: No abstract text available
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original
    PDF NDS9933A NDS9933A

    NDS9933A

    Abstract: No abstract text available
    Text: N September 1996 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original
    PDF NDS9933A NDS9933A

    Untitled

    Abstract: No abstract text available
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original
    PDF NDS9933A

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original
    PDF NDS9933A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor

    NDS9933

    Abstract: No abstract text available
    Text: N May 1996 NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original
    PDF NDS9933 NDS9933

    Untitled

    Abstract: No abstract text available
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original
    PDF NDS9933A

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    LM404-2

    Abstract: amp623 LM324b HMC2003 HMC1002 HMC1021 HMC1001 serial "compass Sensor" lm440 HMC1021S
    Text: SENSOR PRODUCTS APPLICATIONS Compassing Navigation Systems 1- and 2-Axis Magnetic Sensors HMC1001 / 1002 HMC1021 / 1022 Attitude Reference Traffic Detection Medical Devices C onfigured as a 4-element wheatstone bridge, these magnetoresistive sensors convert magnetic fields to


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    PDF HMC1001 HMC1021 HMC1021S 16-Pin HMC1022 LM404-2 amp623 LM324b HMC2003 HMC1002 serial "compass Sensor" lm440 HMC1021S

    ZTX605 equivalent

    Abstract: lm440 HMC1021Z HMC2003 HMC10XX HMC1021 AMP04 FLUXGATE HMC1022 lm440 voltage reference
    Text: SENSOR PRODUCTS APPLICATIONS Compassing Navigation Systems 1 & 2 Axis Magnetoresistive Microcircuits Attitude Reference Traffic Detection Medical Devices Non-Contact Switch Not actual size HMC1001 / 1002 HMC1021 / 1022 C onfigured as a 4-element wheatstone bridge, these


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    PDF HMC1001 HMC1021 HMC1021S 16-Pin HMC1022 ZTX605 equivalent lm440 HMC1021Z HMC2003 HMC10XX AMP04 FLUXGATE HMC1022 lm440 voltage reference

    HMC1021D

    Abstract: HMC10XX AN-205 HMC1001 HMC1002 HMC1021 HMC1022 HMC1021Z HMC1001-8-Pin
    Text: SENSOR PRODUCTS APPLICATIONS Compassing Navigation Systems 1 & 2 Axis Magnetoresistive Microcircuits Attitude Reference Traffic Detection Medical Devices Non-Contact Switch Not actual size HMC1001 / 1002 HMC1021 / 1022 C onfigured as a 4-element wheatstone bridge, these


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    PDF HMC1001 HMC1021 HMC1021S 16-Pin HMC1022 HMC1021D HMC10XX AN-205 HMC1002 HMC1022 HMC1021Z HMC1001-8-Pin

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    HMC1022

    Abstract: current sensor 500mA HMC1021 MN14 sensor using 555 timer AN-207 DI9952 FMMT617 FMMT717 IRF7105
    Text: SET/RESET PULSE CIRCUITS FOR HMC1021/22 AN-207 Mike Caruso, Sensor Applications Engineer Honeywell’s HMC10021/22 magnetoresistive permalloy sensors are sensitive to magnetic fields less than 100 µgauss in a ±6 gauss range. In order to achieve this high


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    PDF HMC1021/22 AN-207 HMC10021/22 HMC1022 NDS9933 NDS8926 HMC1022 current sensor 500mA HMC1021 MN14 sensor using 555 timer AN-207 DI9952 FMMT617 FMMT717 IRF7105

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor” May 1996 NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement m ode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.


    OCR Scan
    PDF NDS9933

    AAW2

    Abstract: CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A
    Text: N/l IC O N D U C TO R tm NDS9933A Dual P-Channel Enhancem ent M ode Field Effect Transistor Features General Description T h is P -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e f­ • -2 .8 A , - 2 0 V. R,D S o n fe c t tra n s is to r is p ro d u c e d u s in g F a irc h ild ’s p ro p ri­


    OCR Scan
    PDF NDS9933A AAW2 CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A

    transistor 1gs

    Abstract: A7840
    Text: May 1996 N NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan
    PDF NDS9933 S9933 transistor 1gs A7840

    9933A

    Abstract: No abstract text available
    Text: F A IR C H IL D S eptem ber 1996 M lC O N D U C T O R NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan
    PDF NDS9933A 9933A

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description This P-Channel enhancement mode power field ef­ • -2.8 A, -20 V. RDS on = 0.14 « @ VQS = -4.5 V fect transistor is produced using Fairchild’s propri­


    OCR Scan
    PDF NDS9933A DC/95

    JJS-100

    Abstract: NDS9933A
    Text: June 1996 National Semiconductor" ADVANCE INFORMATION & NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    PDF NDS9933A 300ps, 03clclà JJS-100 NDS9933A

    NDS9933

    Abstract: Transistor c 4138 LA 4138
    Text: National w j f May 1996 Semiconductor” NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor G en eral D e sc rip tio n F eatu res These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DM0S technology.


    OCR Scan
    PDF NDS9933 bSD113D NDS9933 Transistor c 4138 LA 4138