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    RGS 13 Price and Stock

    Panduit Corp RGS134-1Y

    GROUNDING STRIP KITS 1 78.65 2M
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    DigiKey RGS134-1Y Bulk 8 1
    • 1 $163.82
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    Avnet Americas RGS134-1Y Bulk 7 Weeks 1
    • 1 $227.49
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    RGS134-1Y 8 Weeks 2
    • 1 $119.35
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    Mouser Electronics RGS134-1Y
    • 1 $163.81
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    Newark RGS134-1Y Bulk 3 1
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    • 1 $141.68
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    TestEquity LLC RGS134-1Y
    • 1 $170.36
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    Panduit Corp RGS134B-1

    GROUNDING STRIP KITS 1 78.65 2M
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    DigiKey RGS134B-1 Bulk 5 1
    • 1 $166.82
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    • 1 $119.35
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    • 1 $141.68
    • 10 $125.94
    • 100 $124.4
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    TestEquity LLC RGS134B-1
    • 1 $170.36
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    Panduit Corp RGS134-10-1Y

    GROUNDING STRIP KITS 10 78.65 2M
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    DigiKey RGS134-10-1Y Bulk 1 1
    • 1 $1026.61
    • 10 $995.504
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    Avnet Americas RGS134-10-1Y 8 Weeks 1
    • 1 $720.76
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    Mouser Electronics RGS134-10-1Y
    • 1 $1026.52
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    Newark RGS134-10-1Y Bulk 1
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    Sager RGS134-10-1Y 1
    • 1 $760.53
    • 10 $751.26
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    Panduit Corp RGS13451-1

    GROUNDING STRIP KIT
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    DigiKey RGS13451-1 Bulk 1
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    Newark RGS13451-1 Kit 3
    • 1 $187.59
    • 10 $174.26
    • 100 $151.4
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    RS RGS13451-1 Kit 7 Weeks 3
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    Master Electronics RGS13451-1
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    • 100 $126.96
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    Sager RGS13451-1 1
    • 1 $146.49
    • 10 $122.08
    • 100 $116.12
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    TestEquity LLC RGS13451-1
    • 1 $159.02
    • 10 $159.02
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    Panduit Corp RGS13448-1

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    RGS 13 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RGS134-10-1Y Panduit Accessories, Static Control, ESD, Clean Room Products, GROUNDING STRIP KITS 10 78.65 2M Original PDF
    RGS134-1Y Panduit Accessories, Static Control, ESD, Clean Room Products, GROUNDING STRIP KITS 1 78.65 2M Original PDF
    RGS13442-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS13442-10-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS13448-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS13448-10-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS13451-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS13451-10-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS13452-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS13452-10-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS134A-10-1 Panduit Accessories, Static Control, ESD, Clean Room Products, GROUNDING STRIP KITS 10 78.65 2M Original PDF
    RGS134B-1 Panduit Accessories, Static Control, ESD, Clean Room Products, GROUNDING STRIP KITS 1 78.65 2M Original PDF
    RGS134B-10-1 Panduit Accessories, Static Control, ESD, Clean Room Products, GROUNDING STRIP KITS 10 78.65 2M Original PDF
    RGS134B42-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS134B42-10-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS134B48-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS134B48-10-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS134B51-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS134B51-10-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF
    RGS134B52-1 Panduit Static Control, ESD, Clean Room Products - Accessories - GROUNDING STRIP KIT Original PDF

    RGS 13 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TPT-81A

    Abstract: ITS-700 ACTTA-100A 8002 1030 Aeroflex RGS 2000
    Text: Avionics RGS 2000 TCAS REPLY GENERATOR Your complete RF source for the testing of TCAS computers The RGS 2000 TCAS Reply Generator is a self-contained RF Test Station designed to be a complete RF resource for the testing of TCAS Traffic Alert and Collision Avoidance


    Original     		PDF

    varistor 1049

    Abstract: RGS1A60D50KKEH51 RGS1A23D25KKEDIN RGS1A60D25KKE RGS1A23D50KKE varistor 471 2kv
    Text: Solid State Relays Zero Switching Types RGS.E, RGS.EDIN • • • • • • • • • • • • • 17.5mm width Rated Operational voltage: Up to 600Vrms Rated Operational current: Up to 90Arms Up to 6600A²s for I²t Control voltages: 3-32 VDC, 20-275 VAC 24-190VDC


    Original     		600Vrms 90Arms 24-190VDC) IEC/EN60947-4-2, IEC/EN60947-4-3, IEC/EN62314, UL508, CSA22 M5x23mm, RGM25 varistor 1049 RGS1A60D50KKEH51 RGS1A23D25KKEDIN RGS1A60D25KKE RGS1A23D50KKE varistor 471 2kv PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		NTE2384 PDF

    NTE491

    Abstract: No abstract text available
    Text: NTE491 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain–Gate Voltage RGS = 1MΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V


    Original     		NTE491 200mA 500mA, NTE491 PDF

    NTE2387

    Abstract: No abstract text available
    Text: NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		NTE2387 NTE2387 PDF

    IXTP130N10T

    Abstract: IXTA130N10T IXTP130N10 130n10 S5080
    Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A IXTP130N10T IXTA130N10T IXTP130N10 130n10 S5080 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		NTE2384 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET VDSS ID25 IXTR20P50P RDS on = - 500V = - 13A ≤ 490mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


    Original     		IXTR20P50P ISOPLUS247 E153432 100ms 20P50P PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A PDF

    170P10P

    Abstract: IXTR170P10P ISOPLUS247
    Text: IXTR170P10P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V -108A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTR170P10P -100V -108A ISOPLUS247 E153432 100ms 170P10P 3-25-09-C IXTR170P10P ISOPLUS247 PDF

    20P50P

    Abstract: ISOPLUS247 mosfet 500v 10A IXYS DSE160-10A
    Text: IXTR20P50P PolarPTM Power MOSFET VDSS ID25 RDS on = - 500V = - 13A ≤ 490mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


    Original     		IXTR20P50P ISOPLUS247 E153432 100ms 20P50P ISOPLUS247 mosfet 500v 10A IXYS DSE160-10A PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTR170P10P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V -108A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100


    Original     		IXTR170P10P -100V -108A ISOPLUS247 E153432 100ms 170P10P 3-25-09-C PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET VDSS ID25 IXTR170P10P RDS on = = ≤ -100V -108A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTR170P10P -100V -108A ISOPLUS247 E153432 100ms 170P10P 3-25-09-C PDF

    160N20

    Abstract: IXTK160N20
    Text: Advance Technical Information IXTK 160N20 High Current MegaMOSTMFET VDSS ID25 = 200 V = 160 A Ω = 13 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		160N20 728B1 123B1 728B1 065B1 160N20 IXTK160N20 PDF

    44N60

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		ISOPLUS247TM 44N60 247TM E153432 44N60 PDF

    mosfet NTE2384

    Abstract: NTE2384 mosfet for 900V, 6A
    Text: NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage TJ = +25° to +150°C , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Drain-Gate Voltage (TJ = +25° to +150°C, RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original     		NTE2384 00A/s, mosfet NTE2384 NTE2384 mosfet for 900V, 6A PDF

    IXTR140P10T

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTR140P10T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTR140P10T -100V ISOPLUS247 E153432 -140A 140P10T IXTR140P10T PDF

    IXTK160N20

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 160N20 High Current MegaMOSTMFET VDSS ID25 = 200 V = 160 A Ω = 13 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		160N20 728B1 123B1 728B1 065B1 IXTK160N20 PDF

    1R4N120P

    Abstract: IXTP1R4N120P
    Text: PolarTM Power MOSFET IXTA1R4N120P IXTP1R4N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 1.4A ≤ 13Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA1R4N120P IXTP1R4N120P O-263 1R4N120P 4-01-08-A IXTP1R4N120P PDF

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


    Original     		2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 160N20 High Current MegaMOSTMFET VDSS ID25 = 200 V = 160 A Ω = 13 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		160N20 728B1 123B1 728B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR140P10T RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTR140P10T -100V ISOPLUS247 E153432 140P10T PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS on = 130 mW (Electrically Isolated Back Surface) Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		ISOPLUS247TM 44N60 247TM E153432 PDF

    Untitled

    Abstract: No abstract text available
    Text: Æxitxan PRODUCT DEVICES.INC. 200V, 120A, 0.03n ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE Rgs=1 .OMn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25*C) DRAIN CURRENT PULSED TOTAL POWER DISSIPATION


    OCR Scan     		MIL-STD-883 DRAIN10V 300nS. PDF