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    IXTP1R4N120P Search Results

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    IXTP1R4N120P Price and Stock

    Littelfuse Inc IXTP1R4N120P

    MOSFET N-CH 1200V 1.4A TO220AB
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    DigiKey IXTP1R4N120P Tube 149 1
    • 1 $5.42
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    Newark IXTP1R4N120P Bulk 300
    • 1 -
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    • 100 $3.61
    • 1000 $2.9
    • 10000 $2.7
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    IXYS Corporation IXTP1R4N120P

    MOSFETs 1.4 Amps 1200V 15 Rds
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    Mouser Electronics IXTP1R4N120P
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    Future Electronics IXTP1R4N120P Tube 24 Weeks 50
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    TTI IXTP1R4N120P Tube 300
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    TME IXTP1R4N120P 1
    • 1 $4.49
    • 10 $3.56
    • 100 $3.2
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    Chip 1 Exchange IXTP1R4N120P 1,306
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    New Advantage Corporation IXTP1R4N120P 605 1
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    IXYS Integrated Circuits Division IXTP1R4N120P

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    Bristol Electronics IXTP1R4N120P 34 2
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    • 100 $2.128
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    Quest Components IXTP1R4N120P 27
    • 1 $5.7
    • 10 $2.85
    • 100 $2.85
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    Ozdisan Elektronik IXTP1R4N120P 705
    • 1 $4.98773
    • 10 $4.98773
    • 100 $4.5343
    • 1000 $4.5343
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    IXTP1R4N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP1R4N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 1.4A TO-220 Original PDF

    IXTP1R4N120P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs VDSS ID25 IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P RDS on = 1200V = 1.4A Ω ≤ 13Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P O-252 O-263 1R4N120P 1-08-A

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA1R4N120P IXTP1R4N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 1.4A ≤ Ω 13Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA1R4N120P IXTP1R4N120P O-263 1R4N120P

    1R4N120P

    Abstract: IXTP1R4N120P
    Text: PolarTM Power MOSFET IXTA1R4N120P IXTP1R4N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 1.4A ≤ 13Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA1R4N120P IXTP1R4N120P O-263 1R4N120P 4-01-08-A IXTP1R4N120P

    IXTY1R4N120P

    Abstract: No abstract text available
    Text: IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P PolarTM Power MOSFETs VDSS ID25 RDS on = 1200V = 1.4A Ω ≤ 13Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P O-252 O-263 O-220) O-252 O-220 1R4N120P

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250