Untitled
Abstract: No abstract text available
Text: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features Broadband Operation 30MHz to 6000MHz Advanced GaN HEMT Technology 2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB
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RFSW2100D
30MHz
6000MHz
DS120620
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Untitled
Abstract: No abstract text available
Text: RFSW2100D RFSW2100D 55W GaN-on-SiC Reflective SPDT RF Switch The RFSW2100D is a GaN-on-SiC high power discrete RF switch designed for military and commercial wireless infrastructure, industrial/scientific/medical and general purpose broadband RF control and switching applications. Using an advanced high power
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RFSW2100D
RFSW2100D
30MHz
DS131029
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"RF Switch"
Abstract: rf switch RFMD HEMT GaN SiC SiC BJT RFSW2100D GaN BJT
Text: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features Broadband Operation 30MHz to 6000MHz Advanced GaN HEMT Technology 2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB
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RFSW2100D
RFSW2100D
30MHz
6000MHz
DS120620
"RF Switch"
rf switch
RFMD HEMT GaN SiC
SiC BJT
GaN BJT
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Integrated Synthesizers with Mixers
Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services
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11F-B,
Integrated Synthesizers with Mixers
Digital Step Attenuators
3G/4G Power Amplifiers
CATV Amplifiers
CATV Hybrid Amplifier Modules
Gain Blocks
Linear Amplifiers
Low Noise Amplifiers
Variable Gain Amplifiers
WiFi Power Amplifiers
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SW2100D
Abstract: RFSW2100D ds1303
Text: R RFSW2 2100D 55W GaN-on-SiC Refflective SPD DT RF Switch Bare Die 1mm x 0.8m mm Features • Broadban nd Operation 30 0MHz - 6GHz Advanced d GaN HEMT Tecchnology 2GHz Typical Performancce o Insertio on Loss = 0.34d dB o Isolation = 37dB o P0.1dB of
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2100D
RFSW2100D
DS130314
SW2100D
ds1303
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